JPH0427709B2 - - Google Patents
Info
- Publication number
- JPH0427709B2 JPH0427709B2 JP57091296A JP9129682A JPH0427709B2 JP H0427709 B2 JPH0427709 B2 JP H0427709B2 JP 57091296 A JP57091296 A JP 57091296A JP 9129682 A JP9129682 A JP 9129682A JP H0427709 B2 JPH0427709 B2 JP H0427709B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- silicon layer
- forming
- oxide film
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052710 silicon Inorganic materials 0.000 claims description 79
- 239000010703 silicon Substances 0.000 claims description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 68
- 238000002844 melting Methods 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 230000008018 melting Effects 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000012298 atmosphere Substances 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 15
- 150000004706 metal oxides Chemical class 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 description 115
- 239000010410 layer Substances 0.000 description 95
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 40
- 229910052814 silicon oxide Inorganic materials 0.000 description 38
- 230000008569 process Effects 0.000 description 33
- 238000005530 etching Methods 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 20
- 230000003647 oxidation Effects 0.000 description 18
- 238000007254 oxidation reaction Methods 0.000 description 18
- 238000001459 lithography Methods 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 14
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 239000012535 impurity Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 230000015654 memory Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000003870 refractory metal Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000013441 quality evaluation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57091296A JPS58209156A (ja) | 1982-05-31 | 1982-05-31 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57091296A JPS58209156A (ja) | 1982-05-31 | 1982-05-31 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58209156A JPS58209156A (ja) | 1983-12-06 |
| JPH0427709B2 true JPH0427709B2 (fr) | 1992-05-12 |
Family
ID=14022502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57091296A Granted JPS58209156A (ja) | 1982-05-31 | 1982-05-31 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58209156A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0618257B2 (ja) * | 1984-04-28 | 1994-03-09 | 富士通株式会社 | 半導体記憶装置の製造方法 |
| JP2588732B2 (ja) * | 1987-11-14 | 1997-03-12 | 富士通株式会社 | 半導体記憶装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53108392A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Semiconductor device |
| JPS55154762A (en) * | 1979-05-22 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor memory |
| JPS5694767A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Semiconductor device |
| JPS56111256A (en) * | 1980-01-31 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor memory device |
| JPS5750441A (en) * | 1980-08-29 | 1982-03-24 | Ibm | Method of forming electric contact |
-
1982
- 1982-05-31 JP JP57091296A patent/JPS58209156A/ja active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53108392A (en) * | 1977-03-04 | 1978-09-21 | Hitachi Ltd | Semiconductor device |
| JPS55154762A (en) * | 1979-05-22 | 1980-12-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor memory |
| JPS5694767A (en) * | 1979-12-28 | 1981-07-31 | Fujitsu Ltd | Semiconductor device |
| JPS56111256A (en) * | 1980-01-31 | 1981-09-02 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Semiconductor memory device |
| JPS5750441A (en) * | 1980-08-29 | 1982-03-24 | Ibm | Method of forming electric contact |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58209156A (ja) | 1983-12-06 |
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