JPH042540B2 - - Google Patents
Info
- Publication number
- JPH042540B2 JPH042540B2 JP61072475A JP7247586A JPH042540B2 JP H042540 B2 JPH042540 B2 JP H042540B2 JP 61072475 A JP61072475 A JP 61072475A JP 7247586 A JP7247586 A JP 7247586A JP H042540 B2 JPH042540 B2 JP H042540B2
- Authority
- JP
- Japan
- Prior art keywords
- powder
- melting point
- silicide
- point metal
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 37
- 238000002844 melting Methods 0.000 claims description 35
- 229910021332 silicide Inorganic materials 0.000 claims description 35
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 230000008018 melting Effects 0.000 claims description 28
- 239000000843 powder Substances 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000011863 silicon-based powder Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000748 compression moulding Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000010298 pulverizing process Methods 0.000 claims 1
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000047 product Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000002285 radioactive effect Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- -1 etc. Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000001192 hot extrusion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61072475A JPS62230676A (ja) | 1986-04-01 | 1986-04-01 | 高融点金属シリサイド製タ−ゲツトの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61072475A JPS62230676A (ja) | 1986-04-01 | 1986-04-01 | 高融点金属シリサイド製タ−ゲツトの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62230676A JPS62230676A (ja) | 1987-10-09 |
| JPH042540B2 true JPH042540B2 (enrdf_load_stackoverflow) | 1992-01-20 |
Family
ID=13490380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61072475A Granted JPS62230676A (ja) | 1986-04-01 | 1986-04-01 | 高融点金属シリサイド製タ−ゲツトの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62230676A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2590091B2 (ja) * | 1987-03-26 | 1997-03-12 | 株式会社東芝 | 高融点金属シリサイドターゲットとその製造方法 |
-
1986
- 1986-04-01 JP JP61072475A patent/JPS62230676A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62230676A (ja) | 1987-10-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR910003884B1 (ko) | 고융점 금속 실리사이드 스퍼터링 타게트 및 이의 제조방법 | |
| US4373947A (en) | Process for the preparation of alloy powders which can be sintered and which are based on titanium | |
| DE68913466T2 (de) | Sputtertarget und Verfahren zu seiner Herstellung. | |
| TW202024000A (zh) | Ｃｒ－Ｓｉ系燒結體、濺鍍靶材及薄膜的製造方法 | |
| JP2757287B2 (ja) | タングステンターゲットの製造方法 | |
| KR20010021722A (ko) | 내부 금속성인 알루미늄 화합물 및 규소 화합물 스퍼터링타겟과 그의 생성방법 | |
| JP2594794B2 (ja) | シリサイドターゲットとその製造方法 | |
| JPH042540B2 (enrdf_load_stackoverflow) | ||
| JP3735060B2 (ja) | 低酸素チタン材の製造方法 | |
| JP3280054B2 (ja) | 半導体用タングステンターゲットの製造方法 | |
| CN117682863A (zh) | 一种高纯碳化硅制品及其制备方法 | |
| JPH0313192B2 (enrdf_load_stackoverflow) | ||
| JP2590091B2 (ja) | 高融点金属シリサイドターゲットとその製造方法 | |
| JP3625928B2 (ja) | Ｔａ／Ｓｉ系焼結合金の製造方法 | |
| CN115259854B (zh) | 一种半导体α-GeTe靶材及其制备方法 | |
| JPH02166276A (ja) | 高融点金属シリサイド製ターゲットおよびその製造方法 | |
| JPH0247261A (ja) | シリサイドターゲットおよびその製造方法 | |
| JPH01249619A (ja) | 高融点金属シリサイドターゲットの製造方法 | |
| JPH0360914B2 (enrdf_load_stackoverflow) | ||
| JPS63259075A (ja) | 窒化チタンタ−ゲツトとその製造方法 | |
| JPS62100403A (ja) | 高純度六方晶窒化硼素微粉末の製造方法 | |
| EP0448721B1 (en) | Giant particle and single crystal of chromium and production thereof | |
| JPS61145828A (ja) | スパツタリングタ−ゲツトとその製造方法 | |
| CN113046704B (zh) | 一种低氧大尺寸含铝基金属间化合物的合金靶材的制备方法 | |
| JPH01131073A (ja) | 高融点金属シリサイド製ターゲットとその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |