JPH0422033B2 - - Google Patents

Info

Publication number
JPH0422033B2
JPH0422033B2 JP57158136A JP15813682A JPH0422033B2 JP H0422033 B2 JPH0422033 B2 JP H0422033B2 JP 57158136 A JP57158136 A JP 57158136A JP 15813682 A JP15813682 A JP 15813682A JP H0422033 B2 JPH0422033 B2 JP H0422033B2
Authority
JP
Japan
Prior art keywords
semiconductor
layer
semiconductor layer
laser device
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57158136A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5947790A (ja
Inventor
Takaro Kuroda
Takashi Kajimura
Yasutoshi Kashiwada
Naoki Kayane
Hirobumi Oochi
So Ootoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57158136A priority Critical patent/JPS5947790A/ja
Priority to EP83108998A priority patent/EP0106152B1/en
Priority to DE8383108998T priority patent/DE3380387D1/de
Priority to US06/531,710 priority patent/US4563764A/en
Publication of JPS5947790A publication Critical patent/JPS5947790A/ja
Publication of JPH0422033B2 publication Critical patent/JPH0422033B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP57158136A 1982-09-13 1982-09-13 半導体レ−ザ装置 Granted JPS5947790A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57158136A JPS5947790A (ja) 1982-09-13 1982-09-13 半導体レ−ザ装置
EP83108998A EP0106152B1 (en) 1982-09-13 1983-09-12 Semiconductor laser device
DE8383108998T DE3380387D1 (en) 1982-09-13 1983-09-12 Semiconductor laser device
US06/531,710 US4563764A (en) 1982-09-13 1983-09-13 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57158136A JPS5947790A (ja) 1982-09-13 1982-09-13 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS5947790A JPS5947790A (ja) 1984-03-17
JPH0422033B2 true JPH0422033B2 (ru) 1992-04-15

Family

ID=15665055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57158136A Granted JPS5947790A (ja) 1982-09-13 1982-09-13 半導体レ−ザ装置

Country Status (4)

Country Link
US (1) US4563764A (ru)
EP (1) EP0106152B1 (ru)
JP (1) JPS5947790A (ru)
DE (1) DE3380387D1 (ru)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6140027A (ja) * 1984-07-31 1986-02-26 Matsushita Electric Ind Co Ltd 結晶成長法
US5075743A (en) * 1989-06-06 1991-12-24 Cornell Research Foundation, Inc. Quantum well optical device on silicon
JP3278951B2 (ja) * 1992-10-23 2002-04-30 ソニー株式会社 オーミック電極の形成方法
US5537433A (en) * 1993-07-22 1996-07-16 Sharp Kabushiki Kaisha Semiconductor light emitter

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5252999Y2 (ru) * 1972-04-18 1977-12-01
JPS49120992U (ru) * 1973-02-13 1974-10-16
NL184715C (nl) * 1978-09-20 1989-10-02 Hitachi Ltd Halfgeleiderlaserinrichting.
CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser
US4280106A (en) * 1979-05-15 1981-07-21 Xerox Corporation Striped substrate planar laser
JPS5640292A (en) * 1979-09-11 1981-04-16 Fujitsu Ltd Semiconductor laser

Also Published As

Publication number Publication date
DE3380387D1 (en) 1989-09-14
JPS5947790A (ja) 1984-03-17
EP0106152A3 (en) 1986-03-05
US4563764A (en) 1986-01-07
EP0106152A2 (en) 1984-04-25
EP0106152B1 (en) 1989-08-09

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