JPH0421956B2 - - Google Patents
Info
- Publication number
- JPH0421956B2 JPH0421956B2 JP57184362A JP18436282A JPH0421956B2 JP H0421956 B2 JPH0421956 B2 JP H0421956B2 JP 57184362 A JP57184362 A JP 57184362A JP 18436282 A JP18436282 A JP 18436282A JP H0421956 B2 JPH0421956 B2 JP H0421956B2
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- cell group
- word line
- selector
- column
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57184362A JPS5972699A (ja) | 1982-10-18 | 1982-10-18 | 半導体メモリ装置 |
| DE19833337850 DE3337850A1 (de) | 1982-10-18 | 1983-10-18 | Halbleiterspeichereinrichtung |
| DE3348201A DE3348201C2 (en) | 1982-10-18 | 1983-10-18 | Semiconductor memory device |
| US07/123,106 USRE33280E (en) | 1982-10-18 | 1987-11-19 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57184362A JPS5972699A (ja) | 1982-10-18 | 1982-10-18 | 半導体メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5972699A JPS5972699A (ja) | 1984-04-24 |
| JPH0421956B2 true JPH0421956B2 (US20090163788A1-20090625-C00002.png) | 1992-04-14 |
Family
ID=16151906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57184362A Granted JPS5972699A (ja) | 1982-10-18 | 1982-10-18 | 半導体メモリ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5972699A (US20090163788A1-20090625-C00002.png) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6120293A (ja) * | 1984-07-05 | 1986-01-29 | Mitsubishi Electric Corp | 半導体メモリ装置 |
| JPS61126689A (ja) * | 1984-11-21 | 1986-06-14 | Fujitsu Ltd | 半導体記憶装置 |
| JPH0758589B2 (ja) * | 1987-04-03 | 1995-06-21 | 三菱電機株式会社 | 半導体記憶装置 |
| JPH01263992A (ja) * | 1988-04-13 | 1989-10-20 | Toshiba Corp | 半導体集積回路 |
| KR100213602B1 (ko) * | 1988-05-13 | 1999-08-02 | 가나이 쓰도무 | 다이나믹형 반도체 기억장치 |
| JPH01286197A (ja) * | 1988-05-13 | 1989-11-17 | Hitachi Ltd | 半導体記憶装置 |
| JPH01307091A (ja) * | 1988-06-03 | 1989-12-12 | Mitsubishi Electric Corp | マルチポートメモリ |
| JPH07114077B2 (ja) * | 1989-06-01 | 1995-12-06 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
| JPH04106783A (ja) * | 1990-08-28 | 1992-04-08 | Sharp Corp | ダイナミック型半導体記憶装置 |
| JP3299285B2 (ja) * | 1991-04-23 | 2002-07-08 | 株式会社日立製作所 | 半導体記憶装置 |
| JPH1040685A (ja) * | 1996-07-23 | 1998-02-13 | Mitsubishi Electric Corp | 同期型記憶装置および同期型記憶装置におけるデータ読み出し方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS573289A (en) * | 1980-06-04 | 1982-01-08 | Hitachi Ltd | Semiconductor storing circuit device |
| JPS5766587A (en) * | 1980-10-09 | 1982-04-22 | Fujitsu Ltd | Static semiconductor storage device |
-
1982
- 1982-10-18 JP JP57184362A patent/JPS5972699A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS573289A (en) * | 1980-06-04 | 1982-01-08 | Hitachi Ltd | Semiconductor storing circuit device |
| JPS5766587A (en) * | 1980-10-09 | 1982-04-22 | Fujitsu Ltd | Static semiconductor storage device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5972699A (ja) | 1984-04-24 |
