JPH0421637B2 - - Google Patents
Info
- Publication number
- JPH0421637B2 JPH0421637B2 JP883587A JP883587A JPH0421637B2 JP H0421637 B2 JPH0421637 B2 JP H0421637B2 JP 883587 A JP883587 A JP 883587A JP 883587 A JP883587 A JP 883587A JP H0421637 B2 JPH0421637 B2 JP H0421637B2
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- base material
- plasma
- reaction vessel
- thermionic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 94
- 239000010432 diamond Substances 0.000 claims description 83
- 229910003460 diamond Inorganic materials 0.000 claims description 79
- 238000006243 chemical reaction Methods 0.000 claims description 35
- 239000007789 gas Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 229930195733 hydrocarbon Natural products 0.000 claims description 11
- 150000002430 hydrocarbons Chemical class 0.000 claims description 11
- 230000004913 activation Effects 0.000 claims description 10
- 238000005513 bias potential Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 238000001308 synthesis method Methods 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 description 34
- 239000010408 film Substances 0.000 description 31
- 239000011248 coating agent Substances 0.000 description 27
- 239000002994 raw material Substances 0.000 description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 10
- 238000001069 Raman spectroscopy Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005284 excitation Effects 0.000 description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP845886 | 1986-01-17 | ||
| JP61-8458 | 1986-01-17 | ||
| JP61-8459 | 1986-01-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62256796A JPS62256796A (ja) | 1987-11-09 |
| JPH0421637B2 true JPH0421637B2 (uk) | 1992-04-13 |
Family
ID=11693687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP883587A Granted JPS62256796A (ja) | 1986-01-17 | 1987-01-16 | ダイヤモンドの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62256796A (uk) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2568542B2 (ja) * | 1987-03-19 | 1997-01-08 | 三菱マテリアル株式会社 | ダイヤモンドの低圧合成法 |
| JP2523052B2 (ja) * | 1990-09-22 | 1996-08-07 | 株式会社不二越 | ダイヤモンドの気相合成方法 |
-
1987
- 1987-01-16 JP JP883587A patent/JPS62256796A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62256796A (ja) | 1987-11-09 |
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