JPH0421214B2 - - Google Patents
Info
- Publication number
- JPH0421214B2 JPH0421214B2 JP1154019A JP15401989A JPH0421214B2 JP H0421214 B2 JPH0421214 B2 JP H0421214B2 JP 1154019 A JP1154019 A JP 1154019A JP 15401989 A JP15401989 A JP 15401989A JP H0421214 B2 JPH0421214 B2 JP H0421214B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- mos transistor
- reference voltage
- impurity
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012535 impurity Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Manipulation Of Pulses (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1154019A JPH02230305A (ja) | 1989-06-16 | 1989-06-16 | 基準電圧装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1154019A JPH02230305A (ja) | 1989-06-16 | 1989-06-16 | 基準電圧装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11617078A Division JPS5541595A (en) | 1978-09-20 | 1978-09-20 | Reference voltage source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02230305A JPH02230305A (ja) | 1990-09-12 |
| JPH0421214B2 true JPH0421214B2 (cs) | 1992-04-09 |
Family
ID=15575132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1154019A Granted JPH02230305A (ja) | 1989-06-16 | 1989-06-16 | 基準電圧装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02230305A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3076097B2 (ja) * | 1991-08-26 | 2000-08-14 | 日本電気株式会社 | 基準電位発生回路 |
| US6222395B1 (en) | 1999-01-04 | 2001-04-24 | International Business Machines Corporation | Single-ended semiconductor receiver with built in threshold voltage difference |
-
1989
- 1989-06-16 JP JP1154019A patent/JPH02230305A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02230305A (ja) | 1990-09-12 |
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