JPH02230305A - 基準電圧装置 - Google Patents
基準電圧装置Info
- Publication number
- JPH02230305A JPH02230305A JP1154019A JP15401989A JPH02230305A JP H02230305 A JPH02230305 A JP H02230305A JP 1154019 A JP1154019 A JP 1154019A JP 15401989 A JP15401989 A JP 15401989A JP H02230305 A JPH02230305 A JP H02230305A
- Authority
- JP
- Japan
- Prior art keywords
- reference voltage
- difference
- gate
- mos transistor
- threshold voltages
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 229920005591 polysilicon Polymers 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000001939 inductive effect Effects 0.000 abstract 3
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000014548 Rubus moluccanus Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Landscapes
- Manipulation Of Pulses (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1154019A JPH02230305A (ja) | 1989-06-16 | 1989-06-16 | 基準電圧装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1154019A JPH02230305A (ja) | 1989-06-16 | 1989-06-16 | 基準電圧装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11617078A Division JPS5541595A (en) | 1978-09-20 | 1978-09-20 | Reference voltage source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02230305A true JPH02230305A (ja) | 1990-09-12 |
| JPH0421214B2 JPH0421214B2 (cs) | 1992-04-09 |
Family
ID=15575132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1154019A Granted JPH02230305A (ja) | 1989-06-16 | 1989-06-16 | 基準電圧装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02230305A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0554673A (ja) * | 1991-08-26 | 1993-03-05 | Nec Corp | 基準電位発生回路 |
| US6222395B1 (en) | 1999-01-04 | 2001-04-24 | International Business Machines Corporation | Single-ended semiconductor receiver with built in threshold voltage difference |
-
1989
- 1989-06-16 JP JP1154019A patent/JPH02230305A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0554673A (ja) * | 1991-08-26 | 1993-03-05 | Nec Corp | 基準電位発生回路 |
| US6222395B1 (en) | 1999-01-04 | 2001-04-24 | International Business Machines Corporation | Single-ended semiconductor receiver with built in threshold voltage difference |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0421214B2 (cs) | 1992-04-09 |
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