JPH0420266B2 - - Google Patents
Info
- Publication number
- JPH0420266B2 JPH0420266B2 JP56129521A JP12952181A JPH0420266B2 JP H0420266 B2 JPH0420266 B2 JP H0420266B2 JP 56129521 A JP56129521 A JP 56129521A JP 12952181 A JP12952181 A JP 12952181A JP H0420266 B2 JPH0420266 B2 JP H0420266B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- substrate
- window
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12952181A JPS5831552A (ja) | 1981-08-18 | 1981-08-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12952181A JPS5831552A (ja) | 1981-08-18 | 1981-08-18 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5831552A JPS5831552A (ja) | 1983-02-24 |
JPH0420266B2 true JPH0420266B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-04-02 |
Family
ID=15011552
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12952181A Granted JPS5831552A (ja) | 1981-08-18 | 1981-08-18 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5831552A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2547954B1 (fr) * | 1983-06-21 | 1985-10-25 | Efcis | Procede de fabrication de composants semi-conducteurs isoles dans une plaquette semi-conductrice |
JPS6038830A (ja) * | 1983-08-12 | 1985-02-28 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
EP0497427B1 (en) * | 1991-02-01 | 1996-04-10 | Koninklijke Philips Electronics N.V. | Semiconductor device for high voltage application and method of making the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2415459A1 (de) * | 1973-04-09 | 1974-10-24 | Xerox Corp | Bilderzeugungsverfahren |
JPS5673697A (en) * | 1979-11-21 | 1981-06-18 | Hitachi Ltd | Manufacture of single crystal thin film |
-
1981
- 1981-08-18 JP JP12952181A patent/JPS5831552A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5831552A (ja) | 1983-02-24 |