JPH0420256B2 - - Google Patents
Info
- Publication number
- JPH0420256B2 JPH0420256B2 JP56047471A JP4747181A JPH0420256B2 JP H0420256 B2 JPH0420256 B2 JP H0420256B2 JP 56047471 A JP56047471 A JP 56047471A JP 4747181 A JP4747181 A JP 4747181A JP H0420256 B2 JPH0420256 B2 JP H0420256B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- emitter
- electrode window
- sio
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56047471A JPS57162460A (en) | 1981-03-31 | 1981-03-31 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56047471A JPS57162460A (en) | 1981-03-31 | 1981-03-31 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57162460A JPS57162460A (en) | 1982-10-06 |
JPH0420256B2 true JPH0420256B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-04-02 |
Family
ID=12776052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56047471A Granted JPS57162460A (en) | 1981-03-31 | 1981-03-31 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57162460A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS609163A (ja) * | 1983-06-29 | 1985-01-18 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS60119775A (ja) * | 1983-12-02 | 1985-06-27 | Hitachi Ltd | 半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5929136B2 (ja) * | 1976-03-30 | 1984-07-18 | 株式会社東芝 | 半導体装置の製造方法 |
US4233337A (en) * | 1978-05-01 | 1980-11-11 | International Business Machines Corporation | Method for forming semiconductor contacts |
US4243435A (en) * | 1979-06-22 | 1981-01-06 | International Business Machines Corporation | Bipolar transistor fabrication process with an ion implanted emitter |
CA1153830A (en) * | 1980-03-24 | 1983-09-13 | Allen P. Ho | Polysilicon-base self-aligned bipolar transistor process and structure |
-
1981
- 1981-03-31 JP JP56047471A patent/JPS57162460A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57162460A (en) | 1982-10-06 |