JPH0416781B2 - - Google Patents
Info
- Publication number
- JPH0416781B2 JPH0416781B2 JP57000727A JP72782A JPH0416781B2 JP H0416781 B2 JPH0416781 B2 JP H0416781B2 JP 57000727 A JP57000727 A JP 57000727A JP 72782 A JP72782 A JP 72782A JP H0416781 B2 JPH0416781 B2 JP H0416781B2
- Authority
- JP
- Japan
- Prior art keywords
- sensitivity
- polymer
- pattern
- trioxabicyclo
- radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 20
- 229920000642 polymer Polymers 0.000 claims description 10
- 230000005855 radiation Effects 0.000 claims description 8
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 5
- 229920001577 copolymer Polymers 0.000 claims description 5
- 230000005865 ionizing radiation Effects 0.000 claims description 3
- 229920006254 polymer film Polymers 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 239000000178 monomer Substances 0.000 claims description 2
- 230000007261 regionalization Effects 0.000 claims 2
- 239000000470 constituent Substances 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 24
- 239000004793 Polystyrene Substances 0.000 description 12
- 229920002223 polystyrene Polymers 0.000 description 12
- 238000010894 electron beam technology Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- -1 4-ethyl-3,5,8-trioxabicyclo[2,2,2]oct-1-ylmethoxymethyl group Chemical group 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 238000007265 chloromethylation reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical class C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 125000004218 chloromethyl group Chemical group [H]C([H])(Cl)* 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000012053 oil suspension Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Silver Salt Photography Or Processing Solution Therefor (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000727A JPS58117538A (ja) | 1982-01-06 | 1982-01-06 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57000727A JPS58117538A (ja) | 1982-01-06 | 1982-01-06 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58117538A JPS58117538A (ja) | 1983-07-13 |
| JPH0416781B2 true JPH0416781B2 (enrdf_load_stackoverflow) | 1992-03-25 |
Family
ID=11481763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57000727A Granted JPS58117538A (ja) | 1982-01-06 | 1982-01-06 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58117538A (enrdf_load_stackoverflow) |
-
1982
- 1982-01-06 JP JP57000727A patent/JPS58117538A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58117538A (ja) | 1983-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4996136A (en) | Radiation sensitive materials and devices made therewith | |
| US4286049A (en) | Method of forming a negative resist pattern | |
| EP0585980B1 (en) | Lithographic process for fabricating a device | |
| JPH07311463A (ja) | ネガ型パターン形成材料 | |
| JPH0416781B2 (enrdf_load_stackoverflow) | ||
| JP2964109B2 (ja) | ポジ型レジスト材料 | |
| JPS5979247A (ja) | 遠紫外線または電子線感応用レジスト | |
| JPS5975244A (ja) | 放射線感応性有機高分子材料 | |
| JPS5953837A (ja) | パタン形成材料およびパタン形成法 | |
| JPS59121042A (ja) | ネガ型レジスト組成物 | |
| JPH0449704B2 (enrdf_load_stackoverflow) | ||
| JPH0449706B2 (enrdf_load_stackoverflow) | ||
| JPH0449705B2 (enrdf_load_stackoverflow) | ||
| JPS59192245A (ja) | レジスト材料 | |
| JPS6231849A (ja) | レジスト材料 | |
| JPS5868745A (ja) | 浮き彫り構造体の製造方法 | |
| JPS6349212B2 (enrdf_load_stackoverflow) | ||
| JPS59198448A (ja) | 放射線感応性有機高分子材料 | |
| JPS59223423A (ja) | レジスト材料 | |
| JPS62253152A (ja) | 放射線感応性重合体組成物 | |
| JPS62254142A (ja) | 放射線感応性有機高分子材料 | |
| JPH01187545A (ja) | ポジ型レジスト材料 | |
| JPH07225480A (ja) | パタン形成材料及びそれを用いたパタン形成方法 | |
| JPS63240544A (ja) | ネガ型レジスト組成物 | |
| JPS6111738A (ja) | 微細パタ−ン形成法 |