JPS58117538A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS58117538A
JPS58117538A JP57000727A JP72782A JPS58117538A JP S58117538 A JPS58117538 A JP S58117538A JP 57000727 A JP57000727 A JP 57000727A JP 72782 A JP72782 A JP 72782A JP S58117538 A JPS58117538 A JP S58117538A
Authority
JP
Japan
Prior art keywords
polymer
sensitivity
pattern
mol
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57000727A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0416781B2 (enrdf_load_stackoverflow
Inventor
Katsumi Tanigaki
勝己 谷垣
Yoshitake Onishi
大西 良武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57000727A priority Critical patent/JPS58117538A/ja
Publication of JPS58117538A publication Critical patent/JPS58117538A/ja
Publication of JPH0416781B2 publication Critical patent/JPH0416781B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP57000727A 1982-01-06 1982-01-06 パタ−ン形成方法 Granted JPS58117538A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57000727A JPS58117538A (ja) 1982-01-06 1982-01-06 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57000727A JPS58117538A (ja) 1982-01-06 1982-01-06 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS58117538A true JPS58117538A (ja) 1983-07-13
JPH0416781B2 JPH0416781B2 (enrdf_load_stackoverflow) 1992-03-25

Family

ID=11481763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57000727A Granted JPS58117538A (ja) 1982-01-06 1982-01-06 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS58117538A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0416781B2 (enrdf_load_stackoverflow) 1992-03-25

Similar Documents

Publication Publication Date Title
US4996136A (en) Radiation sensitive materials and devices made therewith
US4286049A (en) Method of forming a negative resist pattern
JPH0219847A (ja) ポジチブ及びネガチブ処理感放射線混合物及びレリーフパターンの作製方法
EP0064222A2 (en) Process for forming resist patterns
EP0585980B1 (en) Lithographic process for fabricating a device
US4791171A (en) Silylated poly(vinyl)phenol polymers
US5328973A (en) Radiation-sensitive mixture with a polymeric binder containing units of α,β-unsaturated carboxamides
US4476217A (en) Sensitive positive electron beam resists
KR100211546B1 (ko) 신규한 포토레지스트용 공중합체
JPS58117538A (ja) パタ−ン形成方法
US4262083A (en) Positive resist for electron beam and x-ray lithography and method of using same
JPH0160812B2 (enrdf_load_stackoverflow)
US4330671A (en) Positive resist for electron beam and x-ray lithography and method of using same
JPS5868745A (ja) 浮き彫り構造体の製造方法
JPS59192245A (ja) レジスト材料
JPH021860A (ja) 高解像度放射線感応ポジ型レジスト
JPH0449706B2 (enrdf_load_stackoverflow)
JPS63240544A (ja) ネガ型レジスト組成物
JPS59223420A (ja) レジスト材料
JPS62951A (ja) 放射線感応性レジスト用材料
JPH01187545A (ja) ポジ型レジスト材料
JPS62149741A (ja) 放射線硬化型組成物
JPS62254142A (ja) 放射線感応性有機高分子材料
JPS61160742A (ja) レジストの現像液
JPS62177004A (ja) ケイ素原子を含むスチレン系重合体およびパタ−ン形成方法