JPH0449706B2 - - Google Patents

Info

Publication number
JPH0449706B2
JPH0449706B2 JP58098293A JP9829383A JPH0449706B2 JP H0449706 B2 JPH0449706 B2 JP H0449706B2 JP 58098293 A JP58098293 A JP 58098293A JP 9829383 A JP9829383 A JP 9829383A JP H0449706 B2 JPH0449706 B2 JP H0449706B2
Authority
JP
Japan
Prior art keywords
sensitivity
resist
trioxaspiro
molecular weight
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58098293A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59223422A (ja
Inventor
Katsumi Tanigaki
Yoshitake Oonishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58098293A priority Critical patent/JPS59223422A/ja
Publication of JPS59223422A publication Critical patent/JPS59223422A/ja
Publication of JPH0449706B2 publication Critical patent/JPH0449706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP58098293A 1983-06-02 1983-06-02 レジスト材料 Granted JPS59223422A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58098293A JPS59223422A (ja) 1983-06-02 1983-06-02 レジスト材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58098293A JPS59223422A (ja) 1983-06-02 1983-06-02 レジスト材料

Publications (2)

Publication Number Publication Date
JPS59223422A JPS59223422A (ja) 1984-12-15
JPH0449706B2 true JPH0449706B2 (enrdf_load_stackoverflow) 1992-08-12

Family

ID=14215873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58098293A Granted JPS59223422A (ja) 1983-06-02 1983-06-02 レジスト材料

Country Status (1)

Country Link
JP (1) JPS59223422A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS59223422A (ja) 1984-12-15

Similar Documents

Publication Publication Date Title
US4996136A (en) Radiation sensitive materials and devices made therewith
EP0234327B1 (en) High resolution photoresist of imide containing polymers
JP3748596B2 (ja) レジスト材料及びレジストパターンの形成方法
JP3587739B2 (ja) フォトレジスト単量体、フォトレジスト共重合体、フォトレジスト共重合体の製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
JP3643491B2 (ja) 化合物、共重合体とその製造方法、フォトレジスト組成物とこれを利用したフォトレジストパターン形成方法、および半導体素子
EP0585980B1 (en) Lithographic process for fabricating a device
CA1219686A (en) Process for making semiconductor devices using photosensitive bodies
US5527646A (en) Method of forming a micro structure and an x-ray mask
US4556619A (en) Negative-type acetalized polyvinyl alcohol resist sensitive to ionizing radiation
JPH0449706B2 (enrdf_load_stackoverflow)
JPS5868743A (ja) 放射線感応性有機高分子材料
JPH0449705B2 (enrdf_load_stackoverflow)
JPH0160812B2 (enrdf_load_stackoverflow)
JPH0449704B2 (enrdf_load_stackoverflow)
JPS63271253A (ja) 高解像度ポジ型放射線感応性レジスト
JPH0450581B2 (enrdf_load_stackoverflow)
JPS6349213B2 (enrdf_load_stackoverflow)
JPH05257285A (ja) 放射線感光材料およびそれを用いるパターン形成方法
JPS6368612A (ja) α−トリフルオロメチルアクリル酸共重合体
JPH0721055B2 (ja) 二酸化硫黄と核置換スチレン誘導体との共重合体
JPH0223354A (ja) パターン形成方法
JPH0416781B2 (enrdf_load_stackoverflow)
GB2189493A (en) Self-developing resist comprising polymer of aliphatic aldehyde or cyclic ether
JPS62254142A (ja) 放射線感応性有機高分子材料
JPS6259950A (ja) 電離放射線感応ポジ型レジスト