JPH0450581B2 - - Google Patents

Info

Publication number
JPH0450581B2
JPH0450581B2 JP58098294A JP9829483A JPH0450581B2 JP H0450581 B2 JPH0450581 B2 JP H0450581B2 JP 58098294 A JP58098294 A JP 58098294A JP 9829483 A JP9829483 A JP 9829483A JP H0450581 B2 JPH0450581 B2 JP H0450581B2
Authority
JP
Japan
Prior art keywords
sensitivity
trioxaspiro
compound
molecular weight
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58098294A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59223423A (ja
Inventor
Katsumi Tanigaki
Yoshitake Oonishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58098294A priority Critical patent/JPS59223423A/ja
Publication of JPS59223423A publication Critical patent/JPS59223423A/ja
Publication of JPH0450581B2 publication Critical patent/JPH0450581B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
JP58098294A 1983-06-02 1983-06-02 レジスト材料 Granted JPS59223423A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58098294A JPS59223423A (ja) 1983-06-02 1983-06-02 レジスト材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58098294A JPS59223423A (ja) 1983-06-02 1983-06-02 レジスト材料

Publications (2)

Publication Number Publication Date
JPS59223423A JPS59223423A (ja) 1984-12-15
JPH0450581B2 true JPH0450581B2 (enrdf_load_stackoverflow) 1992-08-14

Family

ID=14215898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58098294A Granted JPS59223423A (ja) 1983-06-02 1983-06-02 レジスト材料

Country Status (1)

Country Link
JP (1) JPS59223423A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS59223423A (ja) 1984-12-15

Similar Documents

Publication Publication Date Title
EP0234327B1 (en) High resolution photoresist of imide containing polymers
US4968581A (en) High resolution photoresist of imide containing polymers
US4061829A (en) Negative resist for X-ray and electron beam lithography and method of using same
US3964908A (en) Positive resists containing dimethylglutarimide units
US4318976A (en) High gel rigidity, negative electron beam resists
JP3643491B2 (ja) 化合物、共重合体とその製造方法、フォトレジスト組成物とこれを利用したフォトレジストパターン形成方法、および半導体素子
EP0064222A2 (en) Process for forming resist patterns
US3931435A (en) Electron beam positive resists containing acetate polymers
EP0585980B1 (en) Lithographic process for fabricating a device
JPS6248819B2 (enrdf_load_stackoverflow)
EP0119017B1 (en) Electron-beam and x-ray sensitive polymers and resists
US4556619A (en) Negative-type acetalized polyvinyl alcohol resist sensitive to ionizing radiation
JPH0450581B2 (enrdf_load_stackoverflow)
JPS5868743A (ja) 放射線感応性有機高分子材料
JPH0449705B2 (enrdf_load_stackoverflow)
US4304840A (en) Method of delineating a desired integrated circuit pattern upon a circuit substrate
JPH0449706B2 (enrdf_load_stackoverflow)
JPH0449704B2 (enrdf_load_stackoverflow)
JPS6349213B2 (enrdf_load_stackoverflow)
JPH0160812B2 (enrdf_load_stackoverflow)
JPH087443B2 (ja) 高解像度ポジ型放射線感応性レジスト
JPH087441B2 (ja) ポジ型高感度放射線感応性レジスト
JPH0332782B2 (enrdf_load_stackoverflow)
JP2618978B2 (ja) レジスト材料およびこのレジスト材料を使用するパターン形成方法
JP3772335B2 (ja) 感放射線性樹脂組成物