JPS59223423A - レジスト材料 - Google Patents
レジスト材料Info
- Publication number
- JPS59223423A JPS59223423A JP58098294A JP9829483A JPS59223423A JP S59223423 A JPS59223423 A JP S59223423A JP 58098294 A JP58098294 A JP 58098294A JP 9829483 A JP9829483 A JP 9829483A JP S59223423 A JPS59223423 A JP S59223423A
- Authority
- JP
- Japan
- Prior art keywords
- sensitivity
- mol
- trioxaspiro
- rays
- ionizing radiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 10
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000000470 constituent Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 29
- 238000010894 electron beam technology Methods 0.000 abstract description 10
- 230000005865 ionizing radiation Effects 0.000 abstract description 8
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical group CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 abstract description 7
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 229920001577 copolymer Polymers 0.000 abstract description 3
- 229920001519 homopolymer Polymers 0.000 abstract description 2
- 230000008961 swelling Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229920002239 polyacrylonitrile Polymers 0.000 description 3
- 229920000120 polyethyl acrylate Polymers 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 238000012662 bulk polymerization Methods 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N isopropyl alcohol Natural products CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000003505 polymerization initiator Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- NIQQIJXGUZVEBB-UHFFFAOYSA-N methanol;propan-2-one Chemical compound OC.CC(C)=O NIQQIJXGUZVEBB-UHFFFAOYSA-N 0.000 description 1
- WWECJGLXBSQKRF-UHFFFAOYSA-N n,n-dimethylformamide;methanol Chemical compound OC.CN(C)C=O WWECJGLXBSQKRF-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58098294A JPS59223423A (ja) | 1983-06-02 | 1983-06-02 | レジスト材料 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58098294A JPS59223423A (ja) | 1983-06-02 | 1983-06-02 | レジスト材料 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59223423A true JPS59223423A (ja) | 1984-12-15 |
| JPH0450581B2 JPH0450581B2 (enrdf_load_stackoverflow) | 1992-08-14 |
Family
ID=14215898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58098294A Granted JPS59223423A (ja) | 1983-06-02 | 1983-06-02 | レジスト材料 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59223423A (enrdf_load_stackoverflow) |
-
1983
- 1983-06-02 JP JP58098294A patent/JPS59223423A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0450581B2 (enrdf_load_stackoverflow) | 1992-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3368888B2 (ja) | 有機金属重合体およびその使用 | |
| CA1166061A (en) | Method of forming a negative resist pattern by exposing to crosslink a copolymer containing halomethyl or acrylymethyl substituted styrene units | |
| JP3643491B2 (ja) | 化合物、共重合体とその製造方法、フォトレジスト組成物とこれを利用したフォトレジストパターン形成方法、および半導体素子 | |
| JPS5949536A (ja) | 微細パタ−ン形成方法 | |
| US5527646A (en) | Method of forming a micro structure and an x-ray mask | |
| JP3221909B2 (ja) | フォトレジスト材料およびそれを用いるパターン形成方法 | |
| EP0119017B1 (en) | Electron-beam and x-ray sensitive polymers and resists | |
| US4556619A (en) | Negative-type acetalized polyvinyl alcohol resist sensitive to ionizing radiation | |
| JPS59223423A (ja) | レジスト材料 | |
| JPS5868743A (ja) | 放射線感応性有機高分子材料 | |
| JPS617835A (ja) | レジスト材料 | |
| JPH05257285A (ja) | 放射線感光材料およびそれを用いるパターン形成方法 | |
| JPH0449706B2 (enrdf_load_stackoverflow) | ||
| JPS59223421A (ja) | レジスト材料 | |
| JPS59223420A (ja) | レジスト材料 | |
| JPS5975244A (ja) | 放射線感応性有機高分子材料 | |
| JPS6349213B2 (enrdf_load_stackoverflow) | ||
| JPS59192245A (ja) | レジスト材料 | |
| JPS59121042A (ja) | ネガ型レジスト組成物 | |
| JP2618978B2 (ja) | レジスト材料およびこのレジスト材料を使用するパターン形成方法 | |
| JPS6349212B2 (enrdf_load_stackoverflow) | ||
| JPS6259950A (ja) | 電離放射線感応ポジ型レジスト | |
| JPS61292141A (ja) | レジスト現像法 | |
| JPS5912433A (ja) | ドライ現像ポジ型レジスト組成物 | |
| JPS649613B2 (enrdf_load_stackoverflow) |