JPH0416435B2 - - Google Patents

Info

Publication number
JPH0416435B2
JPH0416435B2 JP60003367A JP336785A JPH0416435B2 JP H0416435 B2 JPH0416435 B2 JP H0416435B2 JP 60003367 A JP60003367 A JP 60003367A JP 336785 A JP336785 A JP 336785A JP H0416435 B2 JPH0416435 B2 JP H0416435B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon
pulling
rod
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60003367A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61163188A (ja
Inventor
Nobuyuki Akyama
Akira Shibayama
Shuji Onoe
Kazuhiro Hasebe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Techxiv Corp
Original Assignee
Komatsu Electronic Metals Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Electronic Metals Co Ltd filed Critical Komatsu Electronic Metals Co Ltd
Priority to JP60003367A priority Critical patent/JPS61163188A/ja
Publication of JPS61163188A publication Critical patent/JPS61163188A/ja
Priority to JP3318683A priority patent/JPH07511B2/ja
Publication of JPH0416435B2 publication Critical patent/JPH0416435B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP60003367A 1985-01-14 1985-01-14 シリコン単結晶引上法における不純物のド−プ方法 Granted JPS61163188A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60003367A JPS61163188A (ja) 1985-01-14 1985-01-14 シリコン単結晶引上法における不純物のド−プ方法
JP3318683A JPH07511B2 (ja) 1985-01-14 1991-11-07 半導体シリコン単結晶の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60003367A JPS61163188A (ja) 1985-01-14 1985-01-14 シリコン単結晶引上法における不純物のド−プ方法
JP3318683A JPH07511B2 (ja) 1985-01-14 1991-11-07 半導体シリコン単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS61163188A JPS61163188A (ja) 1986-07-23
JPH0416435B2 true JPH0416435B2 (enrdf_load_stackoverflow) 1992-03-24

Family

ID=26336927

Family Applications (2)

Application Number Title Priority Date Filing Date
JP60003367A Granted JPS61163188A (ja) 1985-01-14 1985-01-14 シリコン単結晶引上法における不純物のド−プ方法
JP3318683A Expired - Fee Related JPH07511B2 (ja) 1985-01-14 1991-11-07 半導体シリコン単結晶の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP3318683A Expired - Fee Related JPH07511B2 (ja) 1985-01-14 1991-11-07 半導体シリコン単結晶の製造方法

Country Status (1)

Country Link
JP (2) JPS61163188A (enrdf_load_stackoverflow)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0617279B2 (ja) * 1989-01-17 1994-03-09 大阪チタニウム製造株式会社 棒状多結晶シリコンの自動供給方法
JP3455580B2 (ja) * 1994-06-03 2003-10-14 ワッカー・エヌエスシーイー株式会社 シリコン単結晶の引上げ装置および製造方法
JP4607304B2 (ja) * 2000-09-26 2011-01-05 信越半導体株式会社 太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法
JP4607307B2 (ja) * 2000-09-28 2011-01-05 信越半導体株式会社 太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法
WO2003027362A1 (en) * 2001-09-28 2003-04-03 Memc Electronic Materials, Inc. Process for preparing an arsenic-doped single crystal silicon using a submersed dopant feeder
US7922817B2 (en) 2008-04-24 2011-04-12 Memc Electronic Materials, Inc. Method and device for feeding arsenic dopant into a silicon crystal growing apparatus
US8535439B2 (en) 2009-01-14 2013-09-17 Sumco Techxiv Corporation Manufacturing method for silicon single crystal
JP5222162B2 (ja) * 2009-01-16 2013-06-26 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法
CN102560645B (zh) * 2011-09-02 2016-05-18 江苏协鑫硅材料科技发展有限公司 一种在晶体硅形成过程中控制电阻率的方法及其装置
JP5646589B2 (ja) * 2012-12-27 2014-12-24 グローバルウェーハズ・ジャパン株式会社 シリコン単結晶の引き上げ方法
DE102014107590B3 (de) * 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
JP6168011B2 (ja) * 2014-08-19 2017-07-26 信越半導体株式会社 単結晶育成装置及びその装置を用いた単結晶育成方法
JP6222013B2 (ja) 2014-08-29 2017-11-01 信越半導体株式会社 抵抗率制御方法
US10113247B2 (en) 2014-09-29 2018-10-30 Shin-Etsu Handotai Co., Ltd. Semiconductor single crystal pulling apparatus and method for remelting semiconductor single crystal using this
CN104233473B (zh) * 2014-09-30 2016-08-24 天威新能源控股有限公司 用于通用铸锭炉籽晶熔化高度的测量装置及测量方法
JP6304125B2 (ja) * 2015-05-21 2018-04-04 信越半導体株式会社 シリコン単結晶の軸方向の抵抗率制御方法
DE102015114177A1 (de) 2015-08-26 2017-03-02 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
CN105951173A (zh) * 2016-05-30 2016-09-21 上海超硅半导体有限公司 N型单晶硅晶锭及其制造方法
JP7067267B2 (ja) * 2018-05-23 2022-05-16 信越半導体株式会社 原料結晶の抵抗率の測定方法及びｆｚシリコン単結晶の製造方法
CN119041030B (zh) * 2024-11-01 2025-04-18 山东天岳先进科技股份有限公司 一种大尺寸、低电阻4h碳化硅晶棒、低电阻4h碳化硅晶片及制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5490086A (en) * 1977-12-28 1979-07-17 Toshiba Corp Method of producing single crystal
JPS6046073B2 (ja) * 1982-10-27 1985-10-14 小松電子金属株式会社 半導体単結晶の製造方法

Also Published As

Publication number Publication date
JPH06234592A (ja) 1994-08-23
JPH07511B2 (ja) 1995-01-11
JPS61163188A (ja) 1986-07-23

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