JPH0414544B2 - - Google Patents

Info

Publication number
JPH0414544B2
JPH0414544B2 JP57217756A JP21775682A JPH0414544B2 JP H0414544 B2 JPH0414544 B2 JP H0414544B2 JP 57217756 A JP57217756 A JP 57217756A JP 21775682 A JP21775682 A JP 21775682A JP H0414544 B2 JPH0414544 B2 JP H0414544B2
Authority
JP
Japan
Prior art keywords
region
gate
layer
insulating film
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57217756A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59108462A (ja
Inventor
Yoshinori Oota
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Corp filed Critical Olympus Corp
Priority to JP57217756A priority Critical patent/JPS59108462A/ja
Priority to US06/557,236 priority patent/US4684968A/en
Priority to DE19833345175 priority patent/DE3345175A1/de
Publication of JPS59108462A publication Critical patent/JPS59108462A/ja
Publication of JPH0414544B2 publication Critical patent/JPH0414544B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/196—Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP57217756A 1982-12-14 1982-12-14 静電誘導トランジスタを具える固体撮像素子 Granted JPS59108462A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57217756A JPS59108462A (ja) 1982-12-14 1982-12-14 静電誘導トランジスタを具える固体撮像素子
US06/557,236 US4684968A (en) 1982-12-14 1983-12-02 JFET imager having light sensing inversion layer induced by insulator charge
DE19833345175 DE3345175A1 (de) 1982-12-14 1983-12-14 Festkoerper-bildaufnahmewandlerelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57217756A JPS59108462A (ja) 1982-12-14 1982-12-14 静電誘導トランジスタを具える固体撮像素子

Publications (2)

Publication Number Publication Date
JPS59108462A JPS59108462A (ja) 1984-06-22
JPH0414544B2 true JPH0414544B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-03-13

Family

ID=16709248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57217756A Granted JPS59108462A (ja) 1982-12-14 1982-12-14 静電誘導トランジスタを具える固体撮像素子

Country Status (3)

Country Link
US (1) US4684968A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS59108462A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3345175A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3571726D1 (en) * 1984-04-25 1989-08-24 Josef Kemmer Large-surface low-capacity semi-conductor radiation detector
US5142346A (en) * 1987-04-03 1992-08-25 Texas Instruments Incorporated Floating gate JFET image sensor
JPS6442992A (en) * 1987-08-08 1989-02-15 Olympus Optical Co Solid-state image pickup device
JPS6469050A (en) * 1987-09-10 1989-03-15 Olympus Optical Co Solid-state image sensor
US5122851A (en) * 1989-04-03 1992-06-16 Grumman Aerospace Corporation Trench JFET integrated circuit elements
US5184201A (en) * 1989-06-07 1993-02-02 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Static induction transistor
JP2810526B2 (ja) * 1989-11-21 1998-10-15 キヤノン株式会社 光電変換装置及び該装置を搭載した装置
JPH06334920A (ja) * 1993-03-23 1994-12-02 Nippon Hoso Kyokai <Nhk> 固体撮像素子とその駆動方法
DE4326754A1 (de) * 1993-08-11 1995-02-16 Daimler Benz Ag Halbleiter-Photodetektor
US6580106B2 (en) * 2001-01-12 2003-06-17 Isetex. Inc CMOS image sensor with complete pixel reset without kTC noise generation
JP4996364B2 (ja) * 2007-06-26 2012-08-08 オリンパスイメージング株式会社 撮像装置
WO2013137907A1 (en) * 2012-03-16 2013-09-19 Empire Technology Development Llc Low light adaptive imaging device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323224A (en) * 1976-08-16 1978-03-03 Hitachi Ltd Solid pickup unit
JPS5515229A (en) * 1978-07-18 1980-02-02 Semiconductor Res Found Semiconductor photograph device
JPS55124259A (en) * 1979-03-19 1980-09-25 Semiconductor Res Found Semiconductor device
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
JPS5678364U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1979-11-14 1981-06-25
JPS59148473A (ja) * 1983-02-14 1984-08-25 Junichi Nishizawa ２次元固体撮像装置の読出し方法
JPS59153381A (ja) * 1983-02-22 1984-09-01 Junichi Nishizawa ２次元固体撮像装置

Also Published As

Publication number Publication date
JPS59108462A (ja) 1984-06-22
US4684968A (en) 1987-08-04
DE3345175C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-05-18
DE3345175A1 (de) 1984-06-14

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