JPH0411973B2 - - Google Patents
Info
- Publication number
- JPH0411973B2 JPH0411973B2 JP9227582A JP9227582A JPH0411973B2 JP H0411973 B2 JPH0411973 B2 JP H0411973B2 JP 9227582 A JP9227582 A JP 9227582A JP 9227582 A JP9227582 A JP 9227582A JP H0411973 B2 JPH0411973 B2 JP H0411973B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- semiconductor
- layer
- active layer
- electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 40
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 239000000370 acceptor Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/32—Secondary-electron-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8110993A FR2507386A1 (fr) | 1981-06-03 | 1981-06-03 | Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57210539A JPS57210539A (en) | 1982-12-24 |
| JPH0411973B2 true JPH0411973B2 (enExample) | 1992-03-03 |
Family
ID=9259150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9227582A Granted JPS57210539A (en) | 1981-06-03 | 1982-06-01 | Semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4518980A (enExample) |
| EP (1) | EP0066926B1 (enExample) |
| JP (1) | JPS57210539A (enExample) |
| DE (1) | DE3262303D1 (enExample) |
| FR (1) | FR2507386A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4677342A (en) * | 1985-02-01 | 1987-06-30 | Raytheon Company | Semiconductor secondary emission cathode and tube |
| DE69030145T2 (de) * | 1989-08-18 | 1997-07-10 | Galileo Electro Optics Corp | Kontinuierliche Dünnschicht-Dynoden |
| US5680008A (en) * | 1995-04-05 | 1997-10-21 | Advanced Technology Materials, Inc. | Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials |
| JPH1196896A (ja) * | 1997-09-24 | 1999-04-09 | Hamamatsu Photonics Kk | 半導体光電面 |
| US7161162B2 (en) * | 2002-10-10 | 2007-01-09 | Applied Materials, Inc. | Electron beam pattern generator with photocathode comprising low work function cesium halide |
| CN100426439C (zh) * | 2003-12-24 | 2008-10-15 | 中国科学院半导体研究所 | 中浓度p型掺杂透射式砷化镓光阴极材料及其制备方法 |
| US10692683B2 (en) * | 2017-09-12 | 2020-06-23 | Intevac, Inc. | Thermally assisted negative electron affinity photocathode |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3478213A (en) * | 1967-09-05 | 1969-11-11 | Rca Corp | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon |
| US3631303A (en) * | 1970-01-19 | 1971-12-28 | Varian Associates | Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency |
| US3981755A (en) * | 1972-11-24 | 1976-09-21 | U.S. Philips Corporation | Photocathode manufacture |
| DE2261757A1 (de) * | 1972-12-16 | 1974-06-20 | Philips Patentverwaltung | Semitransparente photokathode |
| GB1446592A (en) * | 1973-01-09 | 1976-08-18 | English Electric Valve Co Ltd | Dynode structures |
| AU7731575A (en) * | 1974-01-18 | 1976-07-15 | Nat Patent Dev Corp | Heterojunction devices |
| US3959045A (en) * | 1974-11-18 | 1976-05-25 | Varian Associates | Process for making III-V devices |
| FR2300413A1 (fr) * | 1975-02-04 | 1976-09-03 | Labo Electronique Physique | Fenetre |
| US3959038A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
| GB1536412A (en) * | 1975-05-14 | 1978-12-20 | English Electric Valve Co Ltd | Photocathodes |
| DE2909956A1 (de) * | 1979-03-14 | 1980-09-18 | Licentia Gmbh | Halbleiter-glas-verbundwerkstoff |
-
1981
- 1981-06-03 FR FR8110993A patent/FR2507386A1/fr active Granted
-
1982
- 1982-05-21 US US06/380,633 patent/US4518980A/en not_active Expired - Fee Related
- 1982-05-27 DE DE8282200648T patent/DE3262303D1/de not_active Expired
- 1982-05-27 EP EP82200648A patent/EP0066926B1/fr not_active Expired
- 1982-06-01 JP JP9227582A patent/JPS57210539A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| FR2507386A1 (fr) | 1982-12-10 |
| EP0066926B1 (fr) | 1985-02-13 |
| DE3262303D1 (en) | 1985-03-28 |
| FR2507386B1 (enExample) | 1984-05-04 |
| US4518980A (en) | 1985-05-21 |
| EP0066926A1 (fr) | 1982-12-15 |
| JPS57210539A (en) | 1982-12-24 |
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