JPS57210539A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57210539A JPS57210539A JP9227582A JP9227582A JPS57210539A JP S57210539 A JPS57210539 A JP S57210539A JP 9227582 A JP9227582 A JP 9227582A JP 9227582 A JP9227582 A JP 9227582A JP S57210539 A JPS57210539 A JP S57210539A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/32—Secondary-electron-emitting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8110993A FR2507386A1 (fr) | 1981-06-03 | 1981-06-03 | Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57210539A true JPS57210539A (en) | 1982-12-24 |
JPH0411973B2 JPH0411973B2 (ja) | 1992-03-03 |
Family
ID=9259150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9227582A Granted JPS57210539A (en) | 1981-06-03 | 1982-06-01 | Semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US4518980A (ja) |
EP (1) | EP0066926B1 (ja) |
JP (1) | JPS57210539A (ja) |
DE (1) | DE3262303D1 (ja) |
FR (1) | FR2507386A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020533760A (ja) * | 2017-09-12 | 2020-11-19 | インテヴァック インコーポレイテッド | 熱アシスト負電子親和性フォトカソード |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4677342A (en) * | 1985-02-01 | 1987-06-30 | Raytheon Company | Semiconductor secondary emission cathode and tube |
EP0413482B1 (en) * | 1989-08-18 | 1997-03-12 | Galileo Electro-Optics Corp. | Thin-film continuous dynodes |
US5680008A (en) * | 1995-04-05 | 1997-10-21 | Advanced Technology Materials, Inc. | Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials |
JPH1196896A (ja) * | 1997-09-24 | 1999-04-09 | Hamamatsu Photonics Kk | 半導体光電面 |
US7161162B2 (en) * | 2002-10-10 | 2007-01-09 | Applied Materials, Inc. | Electron beam pattern generator with photocathode comprising low work function cesium halide |
CN100426439C (zh) * | 2003-12-24 | 2008-10-15 | 中国科学院半导体研究所 | 中浓度p型掺杂透射式砷化镓光阴极材料及其制备方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3478213A (en) * | 1967-09-05 | 1969-11-11 | Rca Corp | Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon |
US3631303A (en) * | 1970-01-19 | 1971-12-28 | Varian Associates | Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency |
US3981755A (en) * | 1972-11-24 | 1976-09-21 | U.S. Philips Corporation | Photocathode manufacture |
DE2261757A1 (de) * | 1972-12-16 | 1974-06-20 | Philips Patentverwaltung | Semitransparente photokathode |
GB1446592A (en) * | 1973-01-09 | 1976-08-18 | English Electric Valve Co Ltd | Dynode structures |
AU7731575A (en) * | 1974-01-18 | 1976-07-15 | Nat Patent Dev Corp | Heterojunction devices |
US3959045A (en) * | 1974-11-18 | 1976-05-25 | Varian Associates | Process for making III-V devices |
FR2300413A1 (fr) * | 1975-02-04 | 1976-09-03 | Labo Electronique Physique | Fenetre |
US3959038A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
GB1536412A (en) * | 1975-05-14 | 1978-12-20 | English Electric Valve Co Ltd | Photocathodes |
DE2909956A1 (de) * | 1979-03-14 | 1980-09-18 | Licentia Gmbh | Halbleiter-glas-verbundwerkstoff |
-
1981
- 1981-06-03 FR FR8110993A patent/FR2507386A1/fr active Granted
-
1982
- 1982-05-21 US US06/380,633 patent/US4518980A/en not_active Expired - Fee Related
- 1982-05-27 EP EP82200648A patent/EP0066926B1/fr not_active Expired
- 1982-05-27 DE DE8282200648T patent/DE3262303D1/de not_active Expired
- 1982-06-01 JP JP9227582A patent/JPS57210539A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020533760A (ja) * | 2017-09-12 | 2020-11-19 | インテヴァック インコーポレイテッド | 熱アシスト負電子親和性フォトカソード |
Also Published As
Publication number | Publication date |
---|---|
US4518980A (en) | 1985-05-21 |
FR2507386B1 (ja) | 1984-05-04 |
EP0066926A1 (fr) | 1982-12-15 |
EP0066926B1 (fr) | 1985-02-13 |
FR2507386A1 (fr) | 1982-12-10 |
DE3262303D1 (en) | 1985-03-28 |
JPH0411973B2 (ja) | 1992-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3277268D1 (en) | Chip-array-constructed semiconductor device | |
DE3276920D1 (en) | Semiconductor device | |
EP0072221A3 (en) | Improved semiconductor device | |
JPS57154879A (en) | Semiconductor device | |
KR910001908B1 (en) | Semiconductor device | |
GB2150755B (en) | Semiconductor device structures | |
DE3163340D1 (en) | Semiconductor device | |
JPS57143860A (en) | Semiconductor device | |
GB2097585B (en) | Semiconductor device | |
EP0055558A3 (en) | Semiconductor device | |
DE3161615D1 (en) | Semiconductor device | |
DE3277891D1 (en) | Planar semiconductor device | |
JPS57153442A (en) | Semiconductor device | |
DE3166929D1 (en) | Semiconductor device | |
EP0076495A3 (en) | Photo-detective semiconductor device | |
GB2095471B (en) | Semiconductor device | |
DE3175373D1 (en) | Semiconductor device | |
EP0048358A3 (en) | Semiconductor device | |
DE3162083D1 (en) | Semiconductor device | |
IE821143L (en) | Semiconductor device | |
DE3174500D1 (en) | Semiconductor device | |
DE3174789D1 (en) | Semiconductor device | |
DE3175783D1 (en) | Semiconductor device | |
GB2095907B (en) | Semiconductor device | |
JPS57210539A (en) | Semiconductor device |