DE3262303D1 - Semiconductor electron emitting device whose active layer has a doping gradient - Google Patents

Semiconductor electron emitting device whose active layer has a doping gradient

Info

Publication number
DE3262303D1
DE3262303D1 DE8282200648T DE3262303T DE3262303D1 DE 3262303 D1 DE3262303 D1 DE 3262303D1 DE 8282200648 T DE8282200648 T DE 8282200648T DE 3262303 T DE3262303 T DE 3262303T DE 3262303 D1 DE3262303 D1 DE 3262303D1
Authority
DE
Germany
Prior art keywords
emitting device
active layer
electron emitting
device whose
whose active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282200648T
Other languages
English (en)
Inventor
Pierre Guittard
Philippe Jarry
Alphonse Ducarre
Lazhar Haji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronique & Physique
Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV filed Critical Electronique & Physique
Application granted granted Critical
Publication of DE3262303D1 publication Critical patent/DE3262303D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/32—Secondary-electron-emitting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
DE8282200648T 1981-06-03 1982-05-27 Semiconductor electron emitting device whose active layer has a doping gradient Expired DE3262303D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8110993A FR2507386A1 (fr) 1981-06-03 1981-06-03 Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage

Publications (1)

Publication Number Publication Date
DE3262303D1 true DE3262303D1 (en) 1985-03-28

Family

ID=9259150

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282200648T Expired DE3262303D1 (en) 1981-06-03 1982-05-27 Semiconductor electron emitting device whose active layer has a doping gradient

Country Status (5)

Country Link
US (1) US4518980A (de)
EP (1) EP0066926B1 (de)
JP (1) JPS57210539A (de)
DE (1) DE3262303D1 (de)
FR (1) FR2507386A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677342A (en) * 1985-02-01 1987-06-30 Raytheon Company Semiconductor secondary emission cathode and tube
DE69030145T2 (de) * 1989-08-18 1997-07-10 Galileo Electro Optics Corp Kontinuierliche Dünnschicht-Dynoden
US5680008A (en) * 1995-04-05 1997-10-21 Advanced Technology Materials, Inc. Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials
JPH1196896A (ja) * 1997-09-24 1999-04-09 Hamamatsu Photonics Kk 半導体光電面
US7161162B2 (en) * 2002-10-10 2007-01-09 Applied Materials, Inc. Electron beam pattern generator with photocathode comprising low work function cesium halide
CN100426439C (zh) * 2003-12-24 2008-10-15 中国科学院半导体研究所 中浓度p型掺杂透射式砷化镓光阴极材料及其制备方法
US10692683B2 (en) * 2017-09-12 2020-06-23 Intevac, Inc. Thermally assisted negative electron affinity photocathode

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3631303A (en) * 1970-01-19 1971-12-28 Varian Associates Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency
US3981755A (en) * 1972-11-24 1976-09-21 U.S. Philips Corporation Photocathode manufacture
DE2261757A1 (de) * 1972-12-16 1974-06-20 Philips Patentverwaltung Semitransparente photokathode
GB1446592A (en) * 1973-01-09 1976-08-18 English Electric Valve Co Ltd Dynode structures
AU7731575A (en) * 1974-01-18 1976-07-15 Nat Patent Dev Corp Heterojunction devices
US3959045A (en) * 1974-11-18 1976-05-25 Varian Associates Process for making III-V devices
FR2300413A1 (fr) * 1975-02-04 1976-09-03 Labo Electronique Physique Fenetre
US3959038A (en) * 1975-04-30 1976-05-25 The United States Of America As Represented By The Secretary Of The Army Electron emitter and method of fabrication
GB1536412A (en) * 1975-05-14 1978-12-20 English Electric Valve Co Ltd Photocathodes
DE2909956A1 (de) * 1979-03-14 1980-09-18 Licentia Gmbh Halbleiter-glas-verbundwerkstoff

Also Published As

Publication number Publication date
US4518980A (en) 1985-05-21
FR2507386B1 (de) 1984-05-04
EP0066926B1 (de) 1985-02-13
FR2507386A1 (fr) 1982-12-10
EP0066926A1 (de) 1982-12-15
JPH0411973B2 (de) 1992-03-03
JPS57210539A (en) 1982-12-24

Similar Documents

Publication Publication Date Title
DE3069518D1 (en) Processor on a single semiconductor substrate
DE3071962D1 (en) Semiconductor embedded layer technology
DE3279795D1 (en) High electron mobility semiconductor device
GB2027990B (en) Lead-frame for a semiconductor device
GB2027273B (en) Passivation layer for a semiconductor device
ES520247A0 (es) Mejoras introducidas en un dispositivo fotovoltaico hecho de material semiconductor.
JPS5342693A (en) Semiconductor device including amorphous silicone layer
EP0068645A3 (en) A semiconductor device
JPS55117267A (en) Electron semiconductor element
EP0213910A3 (en) Semiconductor device free from the current leakage through a semiconductor layer and method for manufacturing same
DE3279663D1 (en) Heterojunction semiconductor device
DE3479943D1 (de) A masterslice semiconductor device
ES553580A0 (es) Un dispositivo semiconductor
DE3062675D1 (en) Semiconductor integrated circuit device with a double interconnection layer
ZA771835B (en) Semiconductor devices
EP0060657A3 (en) High electron mobility heterojunction semiconductor devices
EP0331373A3 (en) Semiconductor electron emitting device
DE3474885D1 (en) A semiconductor device comprising an alpha-rays shielding layer
ES517117A0 (es) Un dispositivo semiconductor para emitir electrones.
GB2019643B (en) Electroluminescent semiconductor device
JPS57198643A (en) Semiconductor substrate
GB1540004A (en) Semiconductor light-emitting device
DE3070853D1 (en) Semiconductor device having a soft-error preventing structure
DE3067917D1 (en) Constructional arrangement for semiconductor devices
GB8332106D0 (en) Semiconductor device encapsulation

Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee