DE69030145T2 - Kontinuierliche Dünnschicht-Dynoden - Google Patents
Kontinuierliche Dünnschicht-DynodenInfo
- Publication number
- DE69030145T2 DE69030145T2 DE69030145T DE69030145T DE69030145T2 DE 69030145 T2 DE69030145 T2 DE 69030145T2 DE 69030145 T DE69030145 T DE 69030145T DE 69030145 T DE69030145 T DE 69030145T DE 69030145 T2 DE69030145 T2 DE 69030145T2
- Authority
- DE
- Germany
- Prior art keywords
- dynodes
- thin film
- continuous thin
- continuous
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/24—Dynodes having potential gradient along their surfaces
- H01J43/246—Microchannel plates [MCP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/025—Detectors specially adapted to particle spectrometers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/32—Secondary emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electron Tubes For Measurement (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US39558889A | 1989-08-18 | 1989-08-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69030145D1 DE69030145D1 (de) | 1997-04-17 |
DE69030145T2 true DE69030145T2 (de) | 1997-07-10 |
Family
ID=23563665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69030145T Expired - Fee Related DE69030145T2 (de) | 1989-08-18 | 1990-08-03 | Kontinuierliche Dünnschicht-Dynoden |
Country Status (4)
Country | Link |
---|---|
US (2) | US5378960A (de) |
EP (1) | EP0413482B1 (de) |
JP (1) | JP3113902B2 (de) |
DE (1) | DE69030145T2 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005004885A1 (de) * | 2005-02-03 | 2006-08-10 | Bruker Daltonik Gmbh | Transport von Ionen ins Vakuum |
US7495211B2 (en) | 2004-12-22 | 2009-02-24 | Bruker Daltonik Gmbh | Measuring methods for ion cyclotron resonance mass spectrometers |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5440115A (en) * | 1994-04-05 | 1995-08-08 | Galileo Electro-Optics Corporation | Zener diode biased electron multiplier with stable gain characteristic |
GB2293042A (en) * | 1994-09-03 | 1996-03-13 | Ibm | Electron multiplier, e.g. for a field emission display |
US5569355A (en) * | 1995-01-11 | 1996-10-29 | Center For Advanced Fiberoptic Applications | Method for fabrication of microchannel electron multipliers |
DE19506165A1 (de) * | 1995-02-22 | 1996-05-23 | Siemens Ag | Elektronenvervielfacher und Verfahren zu dessen Herstellung |
US5729244A (en) * | 1995-04-04 | 1998-03-17 | Lockwood; Harry F. | Field emission device with microchannel gain element |
US6522061B1 (en) | 1995-04-04 | 2003-02-18 | Harry F. Lockwood | Field emission device with microchannel gain element |
US5680008A (en) * | 1995-04-05 | 1997-10-21 | Advanced Technology Materials, Inc. | Compact low-noise dynodes incorporating semiconductor secondary electron emitting materials |
US5618217A (en) * | 1995-07-25 | 1997-04-08 | Center For Advanced Fiberoptic Applications | Method for fabrication of discrete dynode electron multipliers |
WO1997020783A1 (en) * | 1995-12-06 | 1997-06-12 | Philips Electronics N.V. | Method of manufacturing a glass substrate coated with a metal oxide and a glass substrate for an electronic display |
US6045677A (en) * | 1996-02-28 | 2000-04-04 | Nanosciences Corporation | Microporous microchannel plates and method of manufacturing same |
TW337592B (en) * | 1997-04-03 | 1998-08-01 | Nat Science Council | Process of depositing silicon dioxide on a group III-V semiconductor substrate by ammoniation treatment |
EP0908917B1 (de) * | 1997-10-10 | 2005-04-20 | Burle Technologies, Inc. | Sekundäremissionsbechichtung für Vervielfacherröhren |
EP1098347A4 (de) * | 1998-06-25 | 2002-04-17 | Hamamatsu Photonics Kk | Photokathode |
US6326654B1 (en) | 1999-02-05 | 2001-12-04 | The United States Of America As Represented By The Secretary Of The Air Force | Hybrid ultraviolet detector |
US6396049B1 (en) * | 2000-01-31 | 2002-05-28 | Northrop Grumman Corporation | Microchannel plate having an enhanced coating |
KR100496281B1 (ko) * | 2000-02-07 | 2005-06-17 | 삼성에스디아이 주식회사 | 2차 전자 증폭 구조체를 채용한 마이크로 채널 플레이트및 이를 이용한 전계 방출 소자 |
US6958474B2 (en) * | 2000-03-16 | 2005-10-25 | Burle Technologies, Inc. | Detector for a bipolar time-of-flight mass spectrometer |
US6828729B1 (en) * | 2000-03-16 | 2004-12-07 | Burle Technologies, Inc. | Bipolar time-of-flight detector, cartridge and detection method |
US6642637B1 (en) | 2000-03-28 | 2003-11-04 | Applied Materials, Inc. | Parallel plate electron multiplier |
JP2001351509A (ja) * | 2000-06-08 | 2001-12-21 | Hamamatsu Photonics Kk | マイクロチャネルプレート |
US6642526B2 (en) * | 2001-06-25 | 2003-11-04 | Ionfinity Llc | Field ionizing elements and applications thereof |
KR100403221B1 (ko) * | 2001-07-23 | 2003-10-23 | 한국수력원자력 주식회사 | 방사성 전자 방출 마이크로채널 판 |
JP4047812B2 (ja) * | 2001-10-31 | 2008-02-13 | イオンフィニティ エルエルシー | ソフトイオン化装置およびその用途 |
KR100873634B1 (ko) * | 2002-02-20 | 2008-12-12 | 삼성전자주식회사 | 탄소나노튜브를 포함하는 전자증폭기 및 그 제조방법 |
US6828714B2 (en) * | 2002-05-03 | 2004-12-07 | Nova Scientific, Inc. | Electron multipliers and radiation detectors |
EP1549359A2 (de) | 2002-10-08 | 2005-07-06 | Osteotech, Inc. | Kupplungsmittel für orthopädische biomaterialien |
US7154086B2 (en) * | 2003-03-19 | 2006-12-26 | Burle Technologies, Inc. | Conductive tube for use as a reflectron lens |
JP4471609B2 (ja) * | 2003-09-10 | 2010-06-02 | 浜松ホトニクス株式会社 | 電子管 |
GB0512001D0 (en) * | 2005-06-13 | 2005-07-20 | Council Cent Lab Res Councils | Electron amplifier device |
US7408142B2 (en) | 2005-09-16 | 2008-08-05 | Arradiance, Inc. | Microchannel amplifier with tailored pore resistance |
US20080073516A1 (en) * | 2006-03-10 | 2008-03-27 | Laprade Bruce N | Resistive glass structures used to shape electric fields in analytical instruments |
US8052884B2 (en) | 2008-02-27 | 2011-11-08 | Arradiance, Inc. | Method of fabricating microchannel plate devices with multiple emissive layers |
US7855493B2 (en) * | 2008-02-27 | 2010-12-21 | Arradiance, Inc. | Microchannel plate devices with multiple emissive layers |
WO2009126845A2 (en) * | 2008-04-10 | 2009-10-15 | Arradiance, Inc. | Image intensifying device |
US8227965B2 (en) * | 2008-06-20 | 2012-07-24 | Arradiance, Inc. | Microchannel plate devices with tunable resistive films |
US8237129B2 (en) * | 2008-06-20 | 2012-08-07 | Arradiance, Inc. | Microchannel plate devices with tunable resistive films |
US7759138B2 (en) * | 2008-09-20 | 2010-07-20 | Arradiance, Inc. | Silicon microchannel plate devices with smooth pores and precise dimensions |
CA2684811C (en) * | 2009-11-06 | 2017-05-23 | Bubble Technology Industries Inc. | Microstructure photomultiplier assembly |
US8921799B2 (en) | 2011-01-21 | 2014-12-30 | Uchicago Argonne, Llc | Tunable resistance coatings |
US9105379B2 (en) | 2011-01-21 | 2015-08-11 | Uchicago Argonne, Llc | Tunable resistance coatings |
US8969823B2 (en) | 2011-01-21 | 2015-03-03 | Uchicago Argonne, Llc | Microchannel plate detector and methods for their fabrication |
EP2851930B1 (de) * | 2012-05-18 | 2017-12-13 | Hamamatsu Photonics K.K. | Mikrokanalplatte |
JP5981820B2 (ja) * | 2012-09-25 | 2016-08-31 | 浜松ホトニクス株式会社 | マイクロチャンネルプレート、マイクロチャンネルプレートの製造方法、及びイメージインテンシファイア |
US11326255B2 (en) * | 2013-02-07 | 2022-05-10 | Uchicago Argonne, Llc | ALD reactor for coating porous substrates |
US9425030B2 (en) | 2013-06-06 | 2016-08-23 | Burle Technologies, Inc. | Electrostatic suppression of ion feedback in a microchannel plate photomultiplier |
JP6407767B2 (ja) * | 2015-03-03 | 2018-10-17 | 浜松ホトニクス株式会社 | 電子増倍体の製造方法、光電子増倍管、及び光電子増倍器 |
JP6496217B2 (ja) * | 2015-09-04 | 2019-04-03 | 浜松ホトニクス株式会社 | マイクロチャンネルプレート及び電子増倍体 |
JP6738244B2 (ja) * | 2016-08-31 | 2020-08-12 | 浜松ホトニクス株式会社 | 電子増倍体の製造方法及び電子増倍体 |
JP6734738B2 (ja) | 2016-08-31 | 2020-08-05 | 浜松ホトニクス株式会社 | 電子増倍体、及び、光電子増倍管 |
JP6983956B2 (ja) * | 2016-08-31 | 2021-12-17 | 浜松ホトニクス株式会社 | 電子増倍体 |
JP6395906B1 (ja) * | 2017-06-30 | 2018-09-26 | 浜松ホトニクス株式会社 | 電子増倍体 |
KR20200094130A (ko) * | 2017-10-09 | 2020-08-06 | 아답타스 솔루션즈 피티와이 엘티디 | 다이노드 전자 방출 표면 위의 오염물 부착을 억제하는 방법 및 장치 |
US11037770B2 (en) | 2018-07-02 | 2021-06-15 | Photonis Scientific, Inc. | Differential coating of high aspect ratio objects through methods of reduced flow and dosing variations |
US11111578B1 (en) | 2020-02-13 | 2021-09-07 | Uchicago Argonne, Llc | Atomic layer deposition of fluoride thin films |
TW202310437A (zh) * | 2021-08-16 | 2023-03-01 | 美商矽安尼克斯有限責任公司 | 微通道板影像增強器及其製作方法 |
US11901169B2 (en) | 2022-02-14 | 2024-02-13 | Uchicago Argonne, Llc | Barrier coatings |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2841729A (en) * | 1955-09-01 | 1958-07-01 | Bendix Aviat Corp | Magnetic electron multiplier |
US3244922A (en) * | 1962-11-05 | 1966-04-05 | Itt | Electron multiplier having undulated passage with semiconductive secondary emissive coating |
US4073989A (en) * | 1964-01-17 | 1978-02-14 | Horizons Incorporated | Continuous channel electron beam multiplier |
US4095132A (en) * | 1964-09-11 | 1978-06-13 | Galileo Electro-Optics Corp. | Electron multiplier |
US3488509A (en) * | 1964-12-07 | 1970-01-06 | Bendix Corp | Particle acceleration having low electron gain |
US3675063A (en) * | 1970-01-02 | 1972-07-04 | Stanford Research Inst | High current continuous dynode electron multiplier |
US3911167A (en) * | 1970-05-01 | 1975-10-07 | Texas Instruments Inc | Electron multiplier and method of making same |
US4095136A (en) * | 1971-10-28 | 1978-06-13 | Varian Associates, Inc. | Image tube employing a microchannel electron multiplier |
USRE31847E (en) * | 1973-01-02 | 1985-03-12 | Eastman Kodak Company | Apparatus and method for producing images corresponding to patterns of high energy radiation |
JPS5443869B2 (de) * | 1973-03-05 | 1979-12-22 | ||
IL42668A (en) * | 1973-07-05 | 1976-02-29 | Seidman A | Channel electron multipliers |
US4352985A (en) * | 1974-01-08 | 1982-10-05 | Martin Frederick W | Scanning ion microscope |
US3959038A (en) * | 1975-04-30 | 1976-05-25 | The United States Of America As Represented By The Secretary Of The Army | Electron emitter and method of fabrication |
US4015159A (en) * | 1975-09-15 | 1977-03-29 | Bell Telephone Laboratories, Incorporated | Semiconductor integrated circuit transistor detector array for channel electron multiplier |
US4099079A (en) * | 1975-10-30 | 1978-07-04 | U.S. Philips Corporation | Secondary-emissive layers |
JPS6013257B2 (ja) * | 1976-02-20 | 1985-04-05 | 松下電器産業株式会社 | 二次電子増倍体およびその製造方法 |
US4051403A (en) * | 1976-08-10 | 1977-09-27 | The United States Of America As Represented By The Secretary Of The Army | Channel plate multiplier having higher secondary emission coefficient near input |
US4236073A (en) * | 1977-05-27 | 1980-11-25 | Martin Frederick W | Scanning ion microscope |
CA1121858A (en) * | 1978-10-13 | 1982-04-13 | Jean-Denis Carette | Electron multiplier device |
JPS6042573B2 (ja) * | 1979-01-24 | 1985-09-24 | 浜松ホトニクス株式会社 | 二次電子増倍電極 |
FR2507386A1 (fr) * | 1981-06-03 | 1982-12-10 | Labo Electronique Physique | Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage |
US4454422A (en) * | 1982-01-27 | 1984-06-12 | Siemens Gammasonics, Inc. | Radiation detector assembly for generating a two-dimensional image |
DE3332995A1 (de) * | 1983-07-14 | 1985-01-24 | Nippon Sheet Glass Co. Ltd., Osaka | Verfahren zum herstellen einer siliciumdioxidbeschichtung |
US4577133A (en) * | 1983-10-27 | 1986-03-18 | Wilson Ronald E | Flat panel display and method of manufacture |
DE3408848A1 (de) * | 1984-03-10 | 1985-09-19 | Kernforschungszentrum Karlsruhe Gmbh, 7500 Karlsruhe | Verfahren zur herstellung von vielkanalplatten |
US4558144A (en) * | 1984-10-19 | 1985-12-10 | Corning Glass Works | Volatile metal complexes |
FR2586508B1 (fr) * | 1985-08-23 | 1988-08-26 | Thomson Csf | Scintillateur d'ecran d'entree de tube intensificateur d'images radiologiques et procede de fabrication d'un tel scintillateur |
US4825118A (en) * | 1985-09-06 | 1989-04-25 | Hamamatsu Photonics Kabushiki Kaisha | Electron multiplier device |
GB2180986B (en) * | 1985-09-25 | 1989-08-23 | English Electric Valve Co Ltd | Image intensifiers |
US4780395A (en) * | 1986-01-25 | 1988-10-25 | Kabushiki Kaisha Toshiba | Microchannel plate and a method for manufacturing the same |
US4757229A (en) * | 1986-11-19 | 1988-07-12 | K And M Electronics, Inc. | Channel electron multiplier |
US4800263A (en) * | 1987-02-17 | 1989-01-24 | Optron Systems, Inc. | Completely cross-talk free high spatial resolution 2D bistable light modulation |
-
1990
- 1990-08-03 DE DE69030145T patent/DE69030145T2/de not_active Expired - Fee Related
- 1990-08-03 EP EP90308571A patent/EP0413482B1/de not_active Expired - Lifetime
- 1990-08-17 JP JP02216929A patent/JP3113902B2/ja not_active Expired - Lifetime
-
1993
- 1993-07-12 US US08/089,771 patent/US5378960A/en not_active Expired - Lifetime
-
1994
- 1994-12-28 US US08/365,242 patent/US5726076A/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7495211B2 (en) | 2004-12-22 | 2009-02-24 | Bruker Daltonik Gmbh | Measuring methods for ion cyclotron resonance mass spectrometers |
DE102005004885A1 (de) * | 2005-02-03 | 2006-08-10 | Bruker Daltonik Gmbh | Transport von Ionen ins Vakuum |
DE102005004885B4 (de) * | 2005-02-03 | 2010-09-30 | Bruker Daltonik Gmbh | Transport von Ionen ins Vakuum |
Also Published As
Publication number | Publication date |
---|---|
JP3113902B2 (ja) | 2000-12-04 |
EP0413482B1 (de) | 1997-03-12 |
US5378960A (en) | 1995-01-03 |
US5726076A (en) | 1998-03-10 |
EP0413482A3 (en) | 1991-07-10 |
EP0413482A2 (de) | 1991-02-20 |
DE69030145D1 (de) | 1997-04-17 |
JPH03116626A (ja) | 1991-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |