JPH0411519B2 - - Google Patents

Info

Publication number
JPH0411519B2
JPH0411519B2 JP59244554A JP24455484A JPH0411519B2 JP H0411519 B2 JPH0411519 B2 JP H0411519B2 JP 59244554 A JP59244554 A JP 59244554A JP 24455484 A JP24455484 A JP 24455484A JP H0411519 B2 JPH0411519 B2 JP H0411519B2
Authority
JP
Japan
Prior art keywords
carbon black
surface area
specific surface
whiskers
oil absorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59244554A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61127700A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59244554A priority Critical patent/JPS61127700A/ja
Priority to GB08527996A priority patent/GB2169592B/en
Priority to FR858516825A priority patent/FR2573444B1/fr
Priority to US06/798,787 priority patent/US4690811A/en
Priority to DE19853541238 priority patent/DE3541238A1/de
Publication of JPS61127700A publication Critical patent/JPS61127700A/ja
Publication of JPH0411519B2 publication Critical patent/JPH0411519B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP59244554A 1984-11-21 1984-11-21 ＳｉＣウイスカ−の製造方法 Granted JPS61127700A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59244554A JPS61127700A (ja) 1984-11-21 1984-11-21 ＳｉＣウイスカ−の製造方法
GB08527996A GB2169592B (en) 1984-11-21 1985-11-13 Process for preparing silicon carbide whiskers
FR858516825A FR2573444B1 (fr) 1984-11-21 1985-11-14 Procede de fabrication de fibres monocristallines en carbure de silicium
US06/798,787 US4690811A (en) 1984-11-21 1985-11-18 Process for preparing silicon carbide whiskers
DE19853541238 DE3541238A1 (de) 1984-11-21 1985-11-21 Verfahren zur herstellung von siliziumkohlenstoffwhiskern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59244554A JPS61127700A (ja) 1984-11-21 1984-11-21 ＳｉＣウイスカ−の製造方法

Publications (2)

Publication Number Publication Date
JPS61127700A JPS61127700A (ja) 1986-06-14
JPH0411519B2 true JPH0411519B2 (enEXAMPLES) 1992-02-28

Family

ID=17120430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59244554A Granted JPS61127700A (ja) 1984-11-21 1984-11-21 ＳｉＣウイスカ−の製造方法

Country Status (5)

Country Link
US (1) US4690811A (enEXAMPLES)
JP (1) JPS61127700A (enEXAMPLES)
DE (1) DE3541238A1 (enEXAMPLES)
FR (1) FR2573444B1 (enEXAMPLES)
GB (1) GB2169592B (enEXAMPLES)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63159298A (ja) * 1986-12-20 1988-07-02 Kobe Steel Ltd 炭化ケイ素ウイスカーの連続製造装置
JPS63156100A (ja) * 1986-12-17 1988-06-29 Kobe Steel Ltd 炭化ケイ素ウイスカ−の製造方法
FR2611694B1 (fr) * 1987-02-23 1989-05-19 Pechiney Electrometallurgie Procede de preparation de trichites en carbure de silicium
US4818732A (en) * 1987-03-19 1989-04-04 The Standard Oil Company High surface area ceramics prepared from organosilane gels
US4963286A (en) * 1987-05-15 1990-10-16 Union Oil Company Of California Dispersions of silica in carbon and a method of making such dispersions
US4839150A (en) * 1987-05-15 1989-06-13 Union Oil Company Of California Production of silicon carbide
US5037626A (en) * 1988-11-22 1991-08-06 Union Oil Company Of California Process for producing silicon carbide whiskers using seeding agent
DE3843291A1 (de) * 1988-12-22 1990-07-05 Orenstein & Koppel Ag Vorkammerschutz von gleitringdichtungen
US5340417A (en) * 1989-01-11 1994-08-23 The Dow Chemical Company Process for preparing silicon carbide by carbothermal reduction
US5190737A (en) * 1989-01-11 1993-03-02 The Dow Chemical Company High yield manufacturing process for silicon carbide
US5221526A (en) * 1991-05-24 1993-06-22 Advanced Industrial Materials Production of silicon carbide whiskers using a seeding component to determine shape and size of whiskers
US6017980A (en) * 1997-03-27 2000-01-25 Cabot Corporation Elastomeric compounds incorporating metal-treated carbon blacks
NZ539237A (en) * 2002-10-09 2006-11-30 Univ East Carolina Frequency altered feedback for treating non-stuttering pathologies
KR100720742B1 (ko) 2005-12-01 2007-05-22 김명길 금속물질 코팅장치 및 코팅방법
CN118745110B (zh) * 2024-07-19 2025-05-27 湖南科技大学 一种高强度低密度轻质硅砖的制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383215A1 (fr) * 1977-03-09 1978-10-06 Ugine Kuhlmann Noir d'acetylene a haute conductibilite electrique et a haut pouvoir absorbant
US4374113A (en) * 1979-08-01 1983-02-15 Cabot Corporation Production of high surface area carbon blacks
JPS6044280B2 (ja) * 1982-02-25 1985-10-02 東海カ−ボン株式会社 炭化けい素ウイスカ−の製造方法
JPS5945640B2 (ja) * 1982-03-31 1984-11-07 東海カ−ボン株式会社 ＳｉＣウイスカ−の製造方法
JPS5923831A (ja) * 1982-07-28 1984-02-07 Tokai Carbon Co Ltd ＳｉＣウイスカ−強化複合材の製造方法
JPS59213700A (ja) * 1983-05-18 1984-12-03 Tokai Carbon Co Ltd ＳｉＣウイスカ−の製造方法
JPS6310120A (ja) * 1986-07-02 1988-01-16 Mitaka Koki Kk 赤道儀架台の精密回動構造

Also Published As

Publication number Publication date
GB2169592B (en) 1988-12-21
DE3541238C2 (enEXAMPLES) 1991-07-25
DE3541238A1 (de) 1986-05-22
FR2573444B1 (fr) 1990-12-28
FR2573444A1 (fr) 1986-05-23
US4690811A (en) 1987-09-01
GB8527996D0 (en) 1985-12-18
JPS61127700A (ja) 1986-06-14
GB2169592A (en) 1986-07-16

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