JPH04113475U - Hybrid IC - Google Patents
Hybrid ICInfo
- Publication number
- JPH04113475U JPH04113475U JP1991025377U JP2537791U JPH04113475U JP H04113475 U JPH04113475 U JP H04113475U JP 1991025377 U JP1991025377 U JP 1991025377U JP 2537791 U JP2537791 U JP 2537791U JP H04113475 U JPH04113475 U JP H04113475U
- Authority
- JP
- Japan
- Prior art keywords
- hybrid
- metal
- board
- metal substrate
- metal substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000011347 resin Substances 0.000 claims description 23
- 229920005989 resin Polymers 0.000 claims description 23
- 238000007789 sealing Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 230000000149 penetrating effect Effects 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 11
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 abstract description 10
- 230000000694 effects Effects 0.000 description 15
- 239000010931 gold Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
(57)【要約】
【目的】 プリント配線板における発熱部品及び発熱量
の多い回路部分を放熱性の良い２枚の金属基板上に実装
し、両基板を貼り合せることで、放熱効率を良くし、端
子取付けを容易にして他の基板との接続を容易に行うこ
とができ、また、２枚の基板上に回路を設けることで、
−面のみのハイブリットＩＣの基板を配置したプリント
基板に比べ、小型化することができるハイブリットＩＣ
を提供する。
【構成】 電気計算機等に用いられるプリント配線板に
おけるハイブリットＩＣにおいて、２枚の放熱性の良い
アルミニウム（Ａｌ）等の金属基板上に素子，部品を実
装し、接続部で２枚の金属基板を素子，部品が内側とな
るよう貼り合せて、金属基板の端部において端子を挟み
込む構造としたハイブリットＩＣである。
(57) [Summary] [Purpose] The heat dissipation efficiency is improved by mounting the heat generating components and circuit parts of a printed wiring board on two metal substrates with good heat dissipation, and bonding the two substrates together. , it is easy to attach terminals and connect to other boards, and by providing circuits on two boards,
-A hybrid IC that can be made smaller compared to a printed circuit board with a surface-only hybrid IC board.
I will provide a. [Structure] In a hybrid IC on a printed wiring board used in electrical computers, etc., elements and components are mounted on two metal substrates such as aluminum (Al) with good heat dissipation, and the two metal substrates are connected at the connection part. This is a hybrid IC with a structure in which elements and components are bonded together so that they are on the inside, and terminals are sandwiched at the ends of a metal substrate.
Description
【０００１】0001
本考案は、電子計算機等に用いられるプリント配線板におけるハイブリットＩ Ｃ（混成集積回路）に係り、特に発熱部品及び発熱量の多い回路部分を２枚の金 属基板上に実装して両基板を貼り合わせたハイブットＩＣに関する。 This invention is a hybrid I in printed wiring boards used in electronic computers, etc. Regarding C (hybrid integrated circuit), especially heat-generating parts and circuit parts that produce a large amount of heat are covered with two pieces of gold. The present invention relates to a high-button IC mounted on a metal substrate and bonding the two substrates together.
【０００２】0002
従来のハイブリットＩＣは、発熱量の少ない回路部品を抜き出して基板上に集 積して、発熱量の多い回路部品が搭載されたプリント配線板上にハイブリットＩ Ｃの基板を配置して配線（端子）で接続するものであった。また、発熱量の多い 回路部品を搭載するハイブリットＩＣの基板を発熱部品に対応できるように放熱 効果のあるアルミ基材等を用いることも考えられていた。 Conventional hybrid ICs extract circuit components that generate less heat and collect them on a board. Hybrid A C board was placed and connected with wiring (terminals). Also, it generates a lot of heat Heat dissipation for hybrid IC boards that carry circuit components so that they can handle heat-generating components It was also considered to use effective aluminum base materials.
【０００３】0003
しかしながら、上記従来のハイブリットＩＣの構成では、発熱量の少ない部品 を集積した基板を、発熱量の多い部品が搭載された基板上に配置する構成となっ ているので、適応範囲が限られてしまい、プリント配線板を小型化できないとの 問題点があった。 However, in the configuration of the conventional hybrid IC described above, components that generate less heat The circuit board with integrated components is placed on top of the circuit board with components that generate a large amount of heat. Therefore, the scope of application is limited and printed wiring boards cannot be made smaller. There was a problem.
【０００４】 そして、基板上の配線に使われているアルミニウム（Ａｌ）は、微細に形成で きないため配線密度を高くすることができず、このため大幅な小型化が難しいと いう問題点があった。0004 The aluminum (Al) used for the wiring on the board can be formed into minute shapes. Therefore, it is not possible to increase the wiring density, which makes it difficult to significantly reduce the size. There was a problem.
【０００５】 また、発熱部品対応としてハイブリットＩＣの基板に用いられているアルミ基 材はアルミニウムのため導電性があり、ハイブリットＩＣの基板と他の基板との 接続の配線も導電性のために配線の端子の出し方が難しく、このため、他の基板 との接続を容易に行うことができないとの問題点があった。[0005] In addition, the aluminum base used in hybrid IC substrates is compatible with heat-generating components. Since the material is aluminum, it is conductive and prevents the connection between the hybrid IC board and other boards. The connection wiring is also conductive, so it is difficult to bring out the terminals of the wiring. There was a problem in that it was not possible to easily connect to the
【０００６】 本考案は上記実情に鑑みて為されたもので、プリント配線板における発熱部品 及び発熱量の多い回路部分を放熱性の良い２枚の金属基板に実装し、部品等が対 向するよう貼り合せて、プリント配線板に搭載することで、放熱の効率を良くし 、更に他の基板との接続を容易に行うことができ、また、２枚の両方の基板上に 配線の回路を設けることで、−面のみのハイブリットＩＣ基板を配置したプリン ト基板に比べて小型化を簡易にすることができるハイブリットＩＣを提供するこ とを目的とする。[0006] The present invention was developed in view of the above circumstances, and it The circuit parts that produce a large amount of heat are mounted on two metal boards with good heat dissipation, and the parts etc. Heat dissipation efficiency can be improved by bonding them facing each other and mounting them on a printed wiring board. Furthermore, it is possible to easily connect to other boards, and it is also possible to connect By providing a wiring circuit, it is possible to create a printer with a hybrid IC board on only the - side. To provide a hybrid IC that can be easily miniaturized compared to a standard board. aimed to.
【０００７】[0007]
上記従来例の問題点を解決するための請求項１記載の考案は、２枚の金属基板 上に第１の封子樹脂で覆われた発熱素子と面実装部品が実装され、端子を挟み込 むよう接続部で前記２枚の金属基板を貼り合せたことを特徴としている。 The invention according to claim 1 for solving the problems of the above-mentioned conventional example is based on two metal substrates. The heating element covered with the first sealing resin and the surface mount component are mounted on top, and the terminal is sandwiched between the heat generating element and the surface mount component. It is characterized in that the two metal substrates are bonded to each other at a connecting portion so that the two metal substrates are bonded together.
【０００８】 上記従来例の問題点を解決するための請求項２記載の考案は、請求項１記載の ハイブリットＩＣにおいて、発熱素子を覆っている第１の封子樹脂を除去し、貼 り合せた２枚の金属基板の側面を第２の封止樹脂により前記発熱素子と面実装部 品を密閉したことを特徴としている。[0008] The invention according to claim 2 for solving the problems of the above conventional example is the invention according to claim 1. In a hybrid IC, the first sealing resin covering the heating element is removed and pasted. The heat generating element and the surface mounting part are attached to the sides of the two metal substrates by using a second sealing resin. It is characterized by the fact that the product is sealed.
【０００９】 上記従来例の問題点を解決するための請求項３記載の考案は、請求項１記載の ハイブリットＩＣにおいて、−方の金属基板に貫通した穴をあけ、前記金属基板 より厚い面実装部品を他方の金属基板上に実装したことを特徴としている。[0009] The invention according to claim 3 for solving the problems of the above conventional example is the invention according to claim 1. In a hybrid IC, a through hole is made in the negative metal substrate, and the metal substrate is The feature is that a thicker surface-mounted component is mounted on the other metal substrate.
【００１０】 上記従来例の問題点を解決するための請求項４記載の考案は、請求項１又は請 求項２又は請求項３記載のハイブリットＩＣにおいて、−方の金属基板のみに発 熱素子と面実装部品を実装し、他方の金属基板に回路を形成したことを特徴とし ている。0010 The invention according to claim 4 for solving the problems of the above conventional example is based on claim 1 or claim 4. In the hybrid IC according to claim 2 or 3, only the metal substrate on the - side is provided with light. It is characterized by mounting a thermal element and surface mount components, and forming a circuit on the other metal substrate. ing.
【００１１】[0011]
請求項１記載の考案によれば、２枚の放熱性の良いアルミニウム（Ａｌ）の金 属基板上に素子，部品を実装し、接続部で２枚の金属基板を素子，部品が内側と なるよう貼り合せて、引き出し端子を挟み込むハイブリットＩＣとしているので 、引き出された端子によって他の基板との接続を容易に行うことができ、また、 ２枚の基板上に配線の回路を設けることができるので、−面のみのハイブリット ＩＣの基板を配置したプリント基板に比べて小型化を簡易にすることができる。 According to the invention described in claim 1, two aluminum (Al) gold sheets with good heat dissipation properties are used. The elements and components are mounted on the metal substrate, and the two metal substrates are connected to the inside with the elements and components at the connection part. It is a hybrid IC that is pasted together so that the lead terminals are inserted. , the pulled out terminals make it easy to connect to other boards, and Since wiring circuits can be provided on two boards, it is possible to create a hybrid with only the negative side. Compared to a printed circuit board on which an IC board is arranged, miniaturization can be made easier.
【００１２】 請求項２記載の考案によれば、請求項１記載のハイブリットＩＣにおいて、発 熱素子を覆っていた第１の封止樹脂を削除し、貼り合せた２枚の金属基板の側面 を第２の封止樹脂で部品実装部を密閉するハイブリットＩＣとしているので、第 １の封止樹脂が発熱素子に応力をかけて、素子からの配線を痛めることがなくな り、ハイブリットＩＣに対する信頼性を向上させることができ、また第１の封子 樹脂を取り除くことでより２枚の金属基板を薄型にすることができる。0012 According to the invention recited in claim 2, in the hybrid IC recited in claim 1, Side view of two metal substrates bonded together after removing the first sealing resin that covered the thermal element Since this is a hybrid IC in which the component mounting area is sealed with a second sealing resin, the The sealing resin in step 1 does not apply stress to the heating element and damage the wiring from the element. This makes it possible to improve the reliability of the hybrid IC, and also improves the reliability of the hybrid IC. By removing the resin, the two metal substrates can be made thinner.
【００１３】 請求項３記載の考案によれば、請求項１記載のハイブリットＩＣにおいて、金 属基板に貫通した穴をあけ、当該金属基板より厚い面実装部品を実装することが できるハイブリットＩＣとしているので、厚みのある部品を実装することができ 、実装できる部品の範囲を広げることができる。[0013] According to the invention recited in claim 3, in the hybrid IC recited in claim 1, gold It is possible to drill holes through the metal board and mount surface mount components that are thicker than the metal board. Since it is a hybrid IC that can be used, thick components can be mounted. , the range of parts that can be mounted can be expanded.
【００１４】 請求項４記載の考案によれば、請求項１，２，３記載のハイブリットＩＣにお いて、発熱素子及び面実装部品の実装を片方の金属基板のみに行い、もう−方の 金属基板を回路だけとするハイブリットＩＣとしているので、実装部品が少なく 、回路が多い場合に基属基板の面積を小さくでき、発熱素子の発熱量が多い場合 に放熱効果を上げることができる。[0014] According to the invention recited in claim 4, the hybrid ICs recited in claims 1, 2, and 3. The heating element and surface mount components are mounted on only one metal board, and the other is mounted on the other metal board. Since it is a hybrid IC with only the circuit on the metal board, there are fewer mounted parts. , when there are many circuits, the area of the base board can be reduced, and when the heating element generates a large amount of heat. can improve the heat dissipation effect.
【００１５】[0015]
本考案の−実施例について図面を参照しながら説明する。 図１は、本考案の−実施例に係るハイブリットＩＣの断面説明図である。 Embodiments of the present invention will be described with reference to the drawings. FIG. 1 is an explanatory cross-sectional view of a hybrid IC according to an embodiment of the present invention.
【００１６】 本実施例のハイブリットＩＣは、電子機器等に用いられる混成集積回路で、２ 枚のアルミニウムの金属基板１ａ，１ｂ上の回路４部分に発熱素子２又は面実装 部品７を実装している。実装した発熱素子２は第１の封止樹脂３で覆い、面実装 部品７を実装した２枚の金属基板１ａ，１ｂは接続部６で接続され、金属基板１ の端部にて端子８を挟み込む構造となっている。[0016] The hybrid IC of this embodiment is a hybrid integrated circuit used in electronic equipment, etc. Heat generating element 2 or surface mounting on circuit 4 part on two aluminum metal substrates 1a, 1b Part 7 is mounted. The mounted heating element 2 is covered with the first sealing resin 3 and surface mounted. The two metal substrates 1a and 1b on which the component 7 is mounted are connected at the connection part 6, and the metal substrate 1 The terminal 8 is sandwiched between the ends of the terminal 8.
【００１７】 また、図５の拡大断面説明図に示す様に、発熱素子２部分は、アルミニウム （Ａｌ）の基板１上に厚さ５０μｍの絶縁層１１を設け、その上にＩＣチップ１ ２をダイボンドペ−スト１３で固定し、金（Ａｕ）の金属ワイヤ−１４でＩＣチ ップ１２のパッド部と金属基板１上のパタ−ン部１５間を電気的に接続し、ワイ ヤ−１４保護のため封子樹脂１６で全体を覆う構造となっている。[0017] Furthermore, as shown in the enlarged cross-sectional explanatory diagram of FIG. 5, the heating element 2 portion is made of aluminum. An insulating layer 11 with a thickness of 50 μm is provided on a substrate 1 made of (Al), and an IC chip 1 is placed on it. 2 with die bond paste 13, and the IC chip with gold (Au) metal wire 14. The pad portion of the chip 12 and the pattern portion 15 on the metal substrate 1 are electrically connected, and a wire is connected. In order to protect the layer 14, the entire structure is covered with a sealing resin 16.
【００１８】 ここで、−方の金属基板に実装した素子又は部品に厚みがある場合を考慮して 、他方の金属基板にザクリの空間を設けることとする。この場合、金属基板と部 品等との間のザクリは、ギャップが大きすぎないようにしておく。[0018] Here, considering the case where the element or component mounted on the negative metal board is thick, , a counterbore space is provided on the other metal substrate. In this case, the metal substrate and Make sure that the gap between the countertop and the item is not too large.
【００１９】 また、２枚の金属基板１ａ，１ｂの接続方法は、導体の接着、ボンデイング、 接触のみによる方法等が考えられる。[0019] The method for connecting the two metal substrates 1a and 1b includes adhesion of conductors, bonding, Possible methods include contact-only methods.
【００２０】 この様に、２枚の金属基板１ａ，１ｂ上下ともアルミニウム（Ａｌ）の金属基 板であり、アルミニウム（Ａｌ）は放熱性が良いため放熱の効率が良く、また、 図１に示すように引き出し端子８を挟み込む構成としているので、配線の端子を 取り付け易くなり、今まで困難だった他の基板との接続をも簡易にできる効果が ある。[0020] In this way, the two metal substrates 1a and 1b have aluminum (Al) metal bases on both the upper and lower sides. It is a plate, and aluminum (Al) has good heat dissipation properties, so it has good heat dissipation efficiency, and As shown in Figure 1, since the lead terminal 8 is sandwiched in, the wiring terminal It is easier to install and has the effect of making it easier to connect to other boards, which was difficult until now. be.
【００２１】 更に、上下の２枚の金属基板１ａ，１ｂ上に回路４等の配線を設けることがで きるので、１面のみのハイブリットＩＣの基板を配置したプリント配線板に比べ 、ハイブリットＩＣを小型化できる効果がある。[0021] Furthermore, wiring such as the circuit 4 can be provided on the upper and lower two metal substrates 1a and 1b. Compared to a printed wiring board with a hybrid IC board on only one side, This has the effect of miniaturizing the hybrid IC.
【００２２】 次に、別の実施例について、図２，図３，図４を使って説明する。 図２，図３，図４は、別の実施例のハイブリットＩＣの断面説明図である。尚 、図１と同様の構成をとる部分については同一の符号を付して説明する。[0022] Next, another embodiment will be described using FIGS. 2, 3, and 4. 2, 3, and 4 are cross-sectional explanatory views of a hybrid IC according to another embodiment. still , parts having the same configuration as those in FIG. 1 will be described with the same reference numerals.
【００２３】 図２のハイブリットＩＣは、図１と同様、２枚の金属基板１ａ，１ｂ上の回路 ４部分に発熱素子２又は面実装部品７を実装している。そして、面実装部品７を 実装した２枚の金属基板１ａ，１ｂを接続部６で接続し、金属基板１の端部にお いて端子８を挟み込んでいるが、図１の構成のハイブリットＩＣとの相違点は、 貼り合せた金属基板１ａ，１ｂの側面を第２の封止樹脂９によって部品実装部を 密閉することである。そして発熱素子２を覆っていた第１の封止樹脂３を削除し ている点である。[0023] Similar to FIG. 1, the hybrid IC in FIG. 2 has a circuit on two metal substrates 1a and 1b. The heating element 2 or surface mount component 7 is mounted on four parts. Then, the surface mount component 7 The two mounted metal substrates 1a and 1b are connected at the connection part 6, and the ends of the metal substrate 1 are connected. However, the difference from the hybrid IC with the configuration shown in Fig. 1 is as follows. The side surfaces of the bonded metal substrates 1a and 1b are covered with a second sealing resin 9 to seal the component mounting area. It must be sealed tightly. Then, the first sealing resin 3 that covered the heating element 2 was removed. The point is that
【００２４】 これにより、今まで、第１の封止樹脂３が発熱素子２に応力をかけ、その力が 発熱素子２からの配線を痛めていた問題がなくなり、ハイブリットＩＣに対する 信頼性をより高めることができる効果がある。[0024] As a result, until now, the first sealing resin 3 has applied stress to the heating element 2, and the force has been The problem of damaging the wiring from heating element 2 has been eliminated, and it is now suitable for hybrid ICs. This has the effect of further increasing reliability.
【００２５】 更に、第１の封子樹脂３を削除することでハイブリットＩＣをより薄型にでき る効果がある。[0025] Furthermore, by removing the first sealing resin 3, the hybrid IC can be made thinner. It has the effect of
【００２６】 図３のハイブリットＩＣは、図１と同様に２枚の金属基板１ａ，１ｂ上の回路 ４部分に発熱素子２又は面実装部品７を実装し、接続部６で接続し、金属基板１ の端部において端子８を挟み込む構造としている。図１のハイブリットＩＣとの 相違点は、金属基板１ａに貫通した穴をあけ、その位置に金属基板１ａより厚い 面実装部品７′を実装した点である。[0026] The hybrid IC in FIG. 3 has a circuit on two metal substrates 1a and 1b, similar to FIG. The heating element 2 or the surface mount component 7 is mounted on the 4 parts, connected by the connection part 6, and the metal substrate 1 The terminal 8 is sandwiched between the ends of the terminal 8. With the hybrid IC in Figure 1 The difference is that a hole is made through the metal substrate 1a, and the hole is thicker than the metal substrate 1a at that position. This is because the surface mount component 7' is mounted.
【００２７】 これにより、厚みのある面実装部品７′を実装することができるので、実装で きる部品の範囲を拡大できる効果がある。[0027] This makes it possible to mount a thick surface mount component 7'. This has the effect of expanding the range of parts that can be processed.
【００２８】 図４のハイブリットＩＣは、２枚の金属基板１ａ，１ｂの間に発熱素子２又は 面実装部品７を実装し、接続部６により２枚の金属基板１ａ，１ｂを接続し、金 属基板１の端部において端子８を挟み込むところまでは、図１，２，３と同じで ある。しかし、この場合、発熱素子２又は面実装部品７の実装を片方の金属基板 １ｂのみに行い、もう−方の金属基板１ａは、配線部分等の回路４だけを形成し て貼り合せるものである。[0028] The hybrid IC of FIG. 4 has a heating element 2 or Mount the surface mount component 7, connect the two metal substrates 1a and 1b using the connection part 6, and The process up to the point where the terminal 8 is sandwiched at the end of the metal board 1 is the same as in Figures 1, 2, and 3. be. However, in this case, the heating element 2 or surface mount component 7 is mounted on one metal substrate. 1b only, and the other metal substrate 1a forms only the circuit 4 such as the wiring part. It is pasted together.
【００２９】 図４のハイブリットＩＣの構造は、実装部品が少なく、配線等の回路が複雑で 多い場合に金属基板１のスペースを有効に活用でき、金属基板の面積を小さくで きる効果がある。また、１個の素子の発熱量が多い場合に上下２枚の金属基板に よって放熱できるので、放熱量を向上させる効果がある。[0029] The structure of the hybrid IC shown in Figure 4 has few mounted components and complicated circuits such as wiring. The space on the metal substrate 1 can be used effectively when the number of metal substrates is large, and the area of the metal substrate can be reduced. It has the effect of In addition, if the amount of heat generated by one element is large, it is possible to Therefore, heat can be radiated, which has the effect of improving the amount of heat radiated.
【００３０】 本考案は、プリント配線板の−部の回路を、貼り合せ金属基板によりハイブリ ットＩＣ化にするときの実装技術であるが、これをプリント配線板全体に適用す ることも可能である。また、金属基板を更に多層化することで、金属基板の面積 を小さくし、小型化を簡易にすることができる効果がある。[0030] This invention hybridizes the circuit in the negative part of the printed wiring board using a bonded metal substrate. This is a mounting technology when converting to a printed circuit board. It is also possible to In addition, by making the metal substrate even more multi-layered, the area of the metal substrate can be reduced. This has the effect of making it smaller and making downsizing easier.
【００３１】[0031]
請求項１記載の考案によれば、２枚の放熱性の良いアルミニウム（Ａｌ）の金 属基板上に素子，部品を実装し、接続部で２枚の金属基板を素子，部品が内側と なるよう貼り合せて、引き出し端子を挟み込むハイブリットＩＣとしているので 、引き出された端子によって他の基板との接続を容易に行うことができ、また、 ２枚の基板上に配線の回路を設けることができるので、−面のみのハイブリット ＩＣの基板を配置したプリント基板に比べて小型化を簡易にすることができる効 果がある。 According to the invention described in claim 1, two aluminum (Al) gold sheets with good heat dissipation properties are used. The elements and components are mounted on the metal substrate, and the two metal substrates are connected to the inside with the elements and components at the connection part. It is a hybrid IC that is pasted together so that the lead terminals are inserted. , the pulled out terminals make it easy to connect to other boards, and Since wiring circuits can be provided on two boards, it is possible to create a hybrid with only the negative side. It has the advantage of being easier to downsize compared to printed circuit boards on which IC boards are placed. There is fruit.
【００３２】 請求項２記載の考案によれば、請求項１記載のハイブリットＩＣにおいて、発 熱素子を覆っていた第１の封子樹脂を削除し、貼り合せた２枚の金属基板の側面 を第２の封子樹脂で部品実装部を密閉するハイブリットＩＣとしているので、第 １の封子樹脂が発熱素子に応力をかけて素子からの配線を痛めることがなくなり 、ハイブリットＩＣに対する信頼性を向上させることができる効果がある。 更に、第１の封子樹脂を取り除くことで、より２枚の金属基板を薄型にするこ とができる効果がある。[0032] According to the invention recited in claim 2, in the hybrid IC recited in claim 1, The first sealing resin covering the thermal element has been removed, and the sides of the two metal substrates bonded together. Since this is a hybrid IC in which the component mounting area is sealed with a second sealing resin, the second The sealing resin in step 1 no longer applies stress to the heating element and damages the wiring from the element. This has the effect of improving the reliability of the hybrid IC. Furthermore, by removing the first sealing resin, it is possible to make the two metal substrates thinner. There is an effect that can be done.
【００３３】 請求項３記載の考案によれば、請求項１記載のハイブリットＩＣにおいて、金 属基板に貫通した穴をあけ、当該金属基板より厚い面実装部品を実装することが できるハイブリットＩＣとしているので、厚みのある部品を実装することができ 、実装できる部品の範囲を広げることができる効果がある。[0033] According to the invention recited in claim 3, in the hybrid IC recited in claim 1, gold It is possible to drill holes through the metal board and mount surface mount components that are thicker than the metal board. Since it is a hybrid IC that can be used, thick components can be mounted. This has the effect of expanding the range of parts that can be mounted.
【００３４】 請求項４記載の考案によれば、請求項１，２，３記載のハイブリットＩＣにお いて、発熱素子及び面実装部品の実装を片方の金属基板のみに行い、もう−方の 金属基板を回路だけとするハイブリットＩＣとしているので、実装部品が少なく 、回路が多い場合に金属基板の面積を小さくでき、発熱素子の発熱量が多い場合 により放熱できる効果がある。[0034] According to the invention recited in claim 4, the hybrid ICs recited in claims 1, 2, and 3. The heating element and surface mount components are mounted on only one metal board, and the other is mounted on the other metal board. Since it is a hybrid IC with only the circuit on the metal board, there are fewer mounted parts. , when there are many circuits, the area of the metal board can be reduced, and when the heating element generates a large amount of heat. This has the effect of dissipating heat.
【図１】本考案の−実施例に係るハイブリットＩＣの断
面説明図である。FIG. 1 is an explanatory cross-sectional view of a hybrid IC according to an embodiment of the present invention.
【図２】本考案の別の実施例に係るハイブリットＩＣの
断面説明図である。FIG. 2 is an explanatory cross-sectional view of a hybrid IC according to another embodiment of the present invention.
【図３】本考案の別の実施例に係るハイブリットＩＣの
断面説明図である。FIG. 3 is an explanatory cross-sectional view of a hybrid IC according to another embodiment of the present invention.
【図４】本考案の別の実施例に係るハイブリットＩＣの
断面説明図である。FIG. 4 is an explanatory cross-sectional view of a hybrid IC according to another embodiment of the present invention.
【図５】発熱素子部分の拡大断面説明図である。FIG. 5 is an enlarged cross-sectional explanatory view of a heating element portion.
１ 金属基板 ２ 発熱素子 ３ 第１の封子樹脂 ４ 回路 ５ 絶縁層 ６ 接続部 ７ 面実装部品 ８ 端子 ９ 第２の封子樹脂 １１ 絶縁層 １２ ＩＣチップ １３ ダイボンドペ−スト １４ ワイヤ− １５ パタ−ン部 １６ 封子樹脂 1 Metal substrate 2 Heat generating element 3 First sealing resin 4 circuit 5 Insulating layer 6 Connection part 7 Surface mount parts 8 Terminal 9 Second sealing resin 11 Insulating layer 12 IC chip 13 Dibond paste 14 Wire 15 Pattern part 16 Sealing resin
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/52 Ｈ０５Ｋ 1/05 Ｚ 8727−4Ｅ 7/20 Ｄ 8509−4Ｅ ──────────────────────────────────────────────── ─── Continued from the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location H01L 23/52 H05K 1/05 Z 8727-4E 7/20 D 8509-4E
Claims (4)
われた発熱素子と面実装部品が実装され、端子を挟むよ
う接続部で前記２枚の金属基板を貼り合せたことを特徴
とするハイブリットＩＣ。[Claim 1] A heat generating element covered with a first sealing resin and a surface mount component are mounted on two metal substrates, and the two metal substrates are bonded together at a connecting portion so as to sandwich a terminal. A hybrid IC featuring
し、貼り合せた２枚の金属基板の側面を第２の封止樹脂
により前記発熱素子と面実装部品を密閉したことを特徴
とする請求項１記載のハイブリットＩＣ。2. The first sealing resin covering the heating element is removed, and the sides of the two bonded metal substrates are sealed with a second sealing resin to seal the heating element and the surface-mounted component. The hybrid IC according to claim 1, characterized in that:
記金属基板より厚い面実装部品を他方の金属基板上に実
装したことを特徴とする請求項１記載のハイブリットＩ
Ｃ。3. The hybrid I according to claim 1, wherein a penetrating hole is made in one of the metal substrates, and a surface mount component thicker than the metal substrate is mounted on the other metal substrate.
C.
部品を実装し、他方の金属基板に回路を形成したことを
特徴とする請求項１又は請求項２又は請求項３記載のハ
イブリットＩＣ。4. The hybrid according to claim 1, 2, or 3, wherein a heating element and a surface mount component are mounted only on one metal substrate, and a circuit is formed on the other metal substrate. I.C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991025377U JP2532400Y2 (en) | 1991-03-22 | 1991-03-22 | Hybrid IC |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1991025377U JP2532400Y2 (en) | 1991-03-22 | 1991-03-22 | Hybrid IC |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04113475U true JPH04113475U (en) | 1992-10-05 |
| JP2532400Y2 JP2532400Y2 (en) | 1997-04-16 |
Family
ID=31910123
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1991025377U Expired - Lifetime JP2532400Y2 (en) | 1991-03-22 | 1991-03-22 | Hybrid IC |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2532400Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016152234A (en) * | 2015-02-16 | 2016-08-22 | 古河電気工業株式会社 | Electronic module |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5254757U (en) * | 1975-10-17 | 1977-04-20 | ||
| JPH0165138U (en) * | 1987-10-20 | 1989-04-26 |
-
1991
- 1991-03-22 JP JP1991025377U patent/JP2532400Y2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5254757U (en) * | 1975-10-17 | 1977-04-20 | ||
| JPH0165138U (en) * | 1987-10-20 | 1989-04-26 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016152234A (en) * | 2015-02-16 | 2016-08-22 | 古河電気工業株式会社 | Electronic module |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2532400Y2 (en) | 1997-04-16 |
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