JPH0410739B2 - - Google Patents
Info
- Publication number
- JPH0410739B2 JPH0410739B2 JP58181096A JP18109683A JPH0410739B2 JP H0410739 B2 JPH0410739 B2 JP H0410739B2 JP 58181096 A JP58181096 A JP 58181096A JP 18109683 A JP18109683 A JP 18109683A JP H0410739 B2 JPH0410739 B2 JP H0410739B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon
- substrate
- dry etching
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/00—
Landscapes
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58181096A JPS6074441A (ja) | 1983-09-29 | 1983-09-29 | 半導体層の表面処理方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58181096A JPS6074441A (ja) | 1983-09-29 | 1983-09-29 | 半導体層の表面処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6074441A JPS6074441A (ja) | 1985-04-26 |
| JPH0410739B2 true JPH0410739B2 (show.php) | 1992-02-26 |
Family
ID=16094758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58181096A Granted JPS6074441A (ja) | 1983-09-29 | 1983-09-29 | 半導体層の表面処理方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074441A (show.php) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4701998A (en) * | 1985-12-02 | 1987-10-27 | International Business Machines Corporation | Method for fabricating a bipolar transistor |
| US4897154A (en) * | 1986-07-03 | 1990-01-30 | International Business Machines Corporation | Post dry-etch cleaning method for restoring wafer properties |
| JP2736061B2 (ja) * | 1987-09-17 | 1998-04-02 | 株式会社東芝 | 半導体装置の製造方法 |
| US4886765A (en) * | 1988-10-26 | 1989-12-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making silicides by heating in oxygen to remove contamination |
-
1983
- 1983-09-29 JP JP58181096A patent/JPS6074441A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6074441A (ja) | 1985-04-26 |
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