JPS6074441A - 半導体層の表面処理方法 - Google Patents

半導体層の表面処理方法

Info

Publication number
JPS6074441A
JPS6074441A JP58181096A JP18109683A JPS6074441A JP S6074441 A JPS6074441 A JP S6074441A JP 58181096 A JP58181096 A JP 58181096A JP 18109683 A JP18109683 A JP 18109683A JP S6074441 A JPS6074441 A JP S6074441A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
silicon
dry etching
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58181096A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410739B2 (show.php
Inventor
Masao Tajima
田島　昌雄
Eiji Igawa
英治 井川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58181096A priority Critical patent/JPS6074441A/ja
Publication of JPS6074441A publication Critical patent/JPS6074441A/ja
Publication of JPH0410739B2 publication Critical patent/JPH0410739B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/00—

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP58181096A 1983-09-29 1983-09-29 半導体層の表面処理方法 Granted JPS6074441A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58181096A JPS6074441A (ja) 1983-09-29 1983-09-29 半導体層の表面処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58181096A JPS6074441A (ja) 1983-09-29 1983-09-29 半導体層の表面処理方法

Publications (2)

Publication Number Publication Date
JPS6074441A true JPS6074441A (ja) 1985-04-26
JPH0410739B2 JPH0410739B2 (show.php) 1992-02-26

Family

ID=16094758

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58181096A Granted JPS6074441A (ja) 1983-09-29 1983-09-29 半導体層の表面処理方法

Country Status (1)

Country Link
JP (1) JPS6074441A (show.php)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133760A (ja) * 1985-12-02 1987-06-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション バイポ−ラ・トランジスタの製造方法
JPS6474719A (en) * 1987-09-17 1989-03-20 Toshiba Corp Manufacture of semiconductor device
US4886765A (en) * 1988-10-26 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making silicides by heating in oxygen to remove contamination
US4897154A (en) * 1986-07-03 1990-01-30 International Business Machines Corporation Post dry-etch cleaning method for restoring wafer properties

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62133760A (ja) * 1985-12-02 1987-06-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション バイポ−ラ・トランジスタの製造方法
US4897154A (en) * 1986-07-03 1990-01-30 International Business Machines Corporation Post dry-etch cleaning method for restoring wafer properties
JPS6474719A (en) * 1987-09-17 1989-03-20 Toshiba Corp Manufacture of semiconductor device
US4886765A (en) * 1988-10-26 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making silicides by heating in oxygen to remove contamination

Also Published As

Publication number Publication date
JPH0410739B2 (show.php) 1992-02-26

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