JPH039622B2 - - Google Patents

Info

Publication number
JPH039622B2
JPH039622B2 JP59235677A JP23567784A JPH039622B2 JP H039622 B2 JPH039622 B2 JP H039622B2 JP 59235677 A JP59235677 A JP 59235677A JP 23567784 A JP23567784 A JP 23567784A JP H039622 B2 JPH039622 B2 JP H039622B2
Authority
JP
Japan
Prior art keywords
electrode
control electrode
main
gate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59235677A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61113249A (ja
Inventor
Takeshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59235677A priority Critical patent/JPS61113249A/ja
Priority to DE3538815A priority patent/DE3538815C3/de
Priority to FR858516575A priority patent/FR2572852B1/fr
Publication of JPS61113249A publication Critical patent/JPS61113249A/ja
Publication of JPH039622B2 publication Critical patent/JPH039622B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/00—
    • H10W20/484—
    • H10W76/138—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H10W72/07553—
    • H10W72/531—
    • H10W72/536—
    • H10W72/884—
    • H10W74/00—

Landscapes

  • Die Bonding (AREA)
  • Thyristors (AREA)
JP59235677A 1984-11-08 1984-11-08 半導体装置 Granted JPS61113249A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59235677A JPS61113249A (ja) 1984-11-08 1984-11-08 半導体装置
DE3538815A DE3538815C3 (de) 1984-11-08 1985-10-31 Halbleiterbauelement
FR858516575A FR2572852B1 (fr) 1984-11-08 1985-11-08 Dispositif semi-conducteur en particulier thyristor comportant une electrode d'acces a l'electrode de commande

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59235677A JPS61113249A (ja) 1984-11-08 1984-11-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS61113249A JPS61113249A (ja) 1986-05-31
JPH039622B2 true JPH039622B2 (index.php) 1991-02-08

Family

ID=16989566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59235677A Granted JPS61113249A (ja) 1984-11-08 1984-11-08 半導体装置

Country Status (3)

Country Link
JP (1) JPS61113249A (index.php)
DE (1) DE3538815C3 (index.php)
FR (1) FR2572852B1 (index.php)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement
US5539232A (en) * 1994-05-31 1996-07-23 Kabushiki Kaisha Toshiba MOS composite type semiconductor device
DE19505387A1 (de) * 1995-02-17 1996-08-22 Abb Management Ag Druckkontaktgehäuse für Halbleiterbauelemente
DE19530264A1 (de) * 1995-08-17 1997-02-20 Abb Management Ag Leistungshalbleitermodul

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3559001A (en) * 1968-08-21 1971-01-26 Motorola Inc Semiconductor housing assembly
US3992717A (en) * 1974-06-21 1976-11-16 Westinghouse Electric Corporation Housing for a compression bonded encapsulation of a semiconductor device
FR2440077A1 (fr) * 1978-10-23 1980-05-23 Transformation En Cie Indle Conteneur pour composant electronique de puissance a semi-conducteur et son procede de fabrication
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
JPS58148433A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
JPS60150670A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置
JPS60194565A (ja) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
FR2572852A1 (fr) 1986-05-09
DE3538815A1 (de) 1986-05-15
JPS61113249A (ja) 1986-05-31
DE3538815C2 (index.php) 1994-04-14
FR2572852B1 (fr) 1990-10-05
DE3538815C3 (de) 1994-04-14

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