JPH038583B2 - - Google Patents

Info

Publication number
JPH038583B2
JPH038583B2 JP57211606A JP21160682A JPH038583B2 JP H038583 B2 JPH038583 B2 JP H038583B2 JP 57211606 A JP57211606 A JP 57211606A JP 21160682 A JP21160682 A JP 21160682A JP H038583 B2 JPH038583 B2 JP H038583B2
Authority
JP
Japan
Prior art keywords
insulating film
film
semiconductor
electrode outlet
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57211606A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59100559A (ja
Inventor
Ryuichi Matsuo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP21160682A priority Critical patent/JPS59100559A/ja
Publication of JPS59100559A publication Critical patent/JPS59100559A/ja
Publication of JPH038583B2 publication Critical patent/JPH038583B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165Reinforcing structures
    • H01L2224/02166Collar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05073Single internal layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05556Shape in side view
    • H01L2224/05558Shape in side view conformal layer on a patterned surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01014Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Wire Bonding (AREA)
  • Non-Volatile Memory (AREA)
JP21160682A 1982-11-30 1982-11-30 半導体装置 Granted JPS59100559A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21160682A JPS59100559A (ja) 1982-11-30 1982-11-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21160682A JPS59100559A (ja) 1982-11-30 1982-11-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS59100559A JPS59100559A (ja) 1984-06-09
JPH038583B2 true JPH038583B2 (enrdf_load_stackoverflow) 1991-02-06

Family

ID=16608544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21160682A Granted JPS59100559A (ja) 1982-11-30 1982-11-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS59100559A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0370178A (ja) * 1989-08-09 1991-03-26 Seiko Instr Inc 半導体装置
JP5165190B2 (ja) * 2005-06-15 2013-03-21 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180138A (en) * 1981-04-30 1982-11-06 Nec Corp Semiconductor device
JPS57202749A (en) * 1981-06-08 1982-12-11 Toshiba Corp Semiconductor device
JPS58219741A (ja) * 1982-06-15 1983-12-21 Nippon Gakki Seizo Kk 半導体装置

Also Published As

Publication number Publication date
JPS59100559A (ja) 1984-06-09

Similar Documents

Publication Publication Date Title
US4472730A (en) Semiconductor device having an improved moisture resistance
CA1242532A (en) Input protection arrangement for vlsi intergrated circuit devices
US4625227A (en) Resin molded type semiconductor device having a conductor film
US5539257A (en) Resin molded type semiconductor device having a conductor film
JPH10112459A (ja) 有機物層のカプセル化のための無機物シール、及びそれを形成する方法
US4005455A (en) Corrosive resistant semiconductor interconnect pad
EP0122631B1 (en) Electronic device having a multi-layer wiring structure
US5229642A (en) Resin molded type semiconductor device having a conductor film
JPH01140757A (ja) 半導体入力保護装置
US5552639A (en) Resin molded type semiconductor device having a conductor film
JPH038583B2 (enrdf_load_stackoverflow)
GB2134709A (en) Semiconductor device and fabrication method thereof
US6919611B2 (en) Semiconductor memory reducing current consumption and narrow channel effect and method of manufacturing the same
JPS6359257B2 (enrdf_load_stackoverflow)
JPH0646662B2 (ja) 半導体装置
KR940012583A (ko) 반도체 집적회로 장치 및 그 제조방법
JPH1065157A (ja) 半導体装置
KR960013633B1 (ko) 반도체 집적회로의 쉴딩 방법
JPS62219541A (ja) 半導体装置
KR100575861B1 (ko) 반도체 소자의 정전기 방지 구조
JPH067583B2 (ja) 半導体装置の製法
JPH04145658A (ja) 半導体集積回路
JP2002094008A (ja) 半導体装置とその製造方法
JPH0818007A (ja) 半導体装置
JPS6348181B2 (enrdf_load_stackoverflow)