JPH038106B2 - - Google Patents

Info

Publication number
JPH038106B2
JPH038106B2 JP59215877A JP21587784A JPH038106B2 JP H038106 B2 JPH038106 B2 JP H038106B2 JP 59215877 A JP59215877 A JP 59215877A JP 21587784 A JP21587784 A JP 21587784A JP H038106 B2 JPH038106 B2 JP H038106B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
gate
conductivity type
carrier concentration
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59215877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6194377A (ja
Inventor
Sadao Adachi
Seigo Ando
Nobuhiko Susa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59215877A priority Critical patent/JPS6194377A/ja
Publication of JPS6194377A publication Critical patent/JPS6194377A/ja
Publication of JPH038106B2 publication Critical patent/JPH038106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H10D30/871—Vertical FETs having Schottky gate electrodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59215877A 1984-10-15 1984-10-15 電界効果トランジスタ及びその製法 Granted JPS6194377A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59215877A JPS6194377A (ja) 1984-10-15 1984-10-15 電界効果トランジスタ及びその製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59215877A JPS6194377A (ja) 1984-10-15 1984-10-15 電界効果トランジスタ及びその製法

Publications (2)

Publication Number Publication Date
JPS6194377A JPS6194377A (ja) 1986-05-13
JPH038106B2 true JPH038106B2 (enrdf_load_stackoverflow) 1991-02-05

Family

ID=16679734

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59215877A Granted JPS6194377A (ja) 1984-10-15 1984-10-15 電界効果トランジスタ及びその製法

Country Status (1)

Country Link
JP (1) JPS6194377A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6194377A (ja) 1986-05-13

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