JPS6337511B2 - - Google Patents

Info

Publication number
JPS6337511B2
JPS6337511B2 JP56210866A JP21086681A JPS6337511B2 JP S6337511 B2 JPS6337511 B2 JP S6337511B2 JP 56210866 A JP56210866 A JP 56210866A JP 21086681 A JP21086681 A JP 21086681A JP S6337511 B2 JPS6337511 B2 JP S6337511B2
Authority
JP
Japan
Prior art keywords
gate
layer
slope
semi
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56210866A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58114460A (ja
Inventor
Osamu Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56210866A priority Critical patent/JPS58114460A/ja
Publication of JPS58114460A publication Critical patent/JPS58114460A/ja
Publication of JPS6337511B2 publication Critical patent/JPS6337511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP56210866A 1981-12-28 1981-12-28 半導体装置とその製造方法 Granted JPS58114460A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56210866A JPS58114460A (ja) 1981-12-28 1981-12-28 半導体装置とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56210866A JPS58114460A (ja) 1981-12-28 1981-12-28 半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JPS58114460A JPS58114460A (ja) 1983-07-07
JPS6337511B2 true JPS6337511B2 (enrdf_load_stackoverflow) 1988-07-26

Family

ID=16596393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56210866A Granted JPS58114460A (ja) 1981-12-28 1981-12-28 半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JPS58114460A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS58114460A (ja) 1983-07-07

Similar Documents

Publication Publication Date Title
CA1148272A (en) Vertical field effect transistor with improved gate and channel structure
US4908325A (en) Method of making heterojunction transistors with wide band-gap stop etch layer
US4924283A (en) Heterojunction bipolar transistor and process for fabricating same
WO1989006444A2 (en) Vertical power transistor and fabrication methods
US5294566A (en) Method of producing a semiconductor integrated circuit device composed of a negative differential resistance element and a FET transistor
US5231040A (en) Method of making a field effect transistor
US5814548A (en) Process for making n-channel or p-channel permeable base transistor with a plurality layers
US5837570A (en) Heterostructure semiconductor device and method of fabricating same
CA1271850A (en) Method for fabricating a field-effect transistor with a self-aligned gate
JPS6337511B2 (enrdf_load_stackoverflow)
KR910006751B1 (ko) 반도체 집적회로장치 및 그의 제조방법
JPS6237890B2 (enrdf_load_stackoverflow)
JPH0817185B2 (ja) 浮動電子通路電界効果トランジスタ及びその製造方法
JP2526492B2 (ja) 半導体装置の製造方法
JP2996267B2 (ja) 絶縁ゲート型電界効果トランジスタの製造方法
JPH0797634B2 (ja) 電界効果トランジスタとその製造方法
JPS6366432B2 (enrdf_load_stackoverflow)
JPS6161549B2 (enrdf_load_stackoverflow)
JPH0199263A (ja) 半導体集積回路およびその製造方法
JPS62260370A (ja) 電界効果トランジスタの製造方法
JPH0439941A (ja) 電界効果トランジスタ
JPS63281474A (ja) 半導体装置
JPH0564473B2 (enrdf_load_stackoverflow)
JPH038106B2 (enrdf_load_stackoverflow)
JPH03196574A (ja) 半導体装置及びその製造方法