JPH0378788B2 - - Google Patents
Info
- Publication number
- JPH0378788B2 JPH0378788B2 JP19131888A JP19131888A JPH0378788B2 JP H0378788 B2 JPH0378788 B2 JP H0378788B2 JP 19131888 A JP19131888 A JP 19131888A JP 19131888 A JP19131888 A JP 19131888A JP H0378788 B2 JPH0378788 B2 JP H0378788B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- gaas
- region
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 10
- 230000006698 induction Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims 10
- 239000002344 surface layer Substances 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19131888A JPS6453442A (en) | 1988-07-30 | 1988-07-30 | Gaas semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19131888A JPS6453442A (en) | 1988-07-30 | 1988-07-30 | Gaas semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6453442A JPS6453442A (en) | 1989-03-01 |
| JPH0378788B2 true JPH0378788B2 (enrdf_load_stackoverflow) | 1991-12-16 |
Family
ID=16272562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19131888A Granted JPS6453442A (en) | 1988-07-30 | 1988-07-30 | Gaas semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6453442A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076020A (ja) * | 2000-08-31 | 2002-03-15 | Sumitomo Electric Ind Ltd | 半導体装置 |
-
1988
- 1988-07-30 JP JP19131888A patent/JPS6453442A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6453442A (en) | 1989-03-01 |
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