JPH0376591B2 - - Google Patents

Info

Publication number
JPH0376591B2
JPH0376591B2 JP59027483A JP2748384A JPH0376591B2 JP H0376591 B2 JPH0376591 B2 JP H0376591B2 JP 59027483 A JP59027483 A JP 59027483A JP 2748384 A JP2748384 A JP 2748384A JP H0376591 B2 JPH0376591 B2 JP H0376591B2
Authority
JP
Japan
Prior art keywords
region
type
forming
conductivity type
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59027483A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60170975A (ja
Inventor
Masanori Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP59027483A priority Critical patent/JPS60170975A/ja
Publication of JPS60170975A publication Critical patent/JPS60170975A/ja
Publication of JPH0376591B2 publication Critical patent/JPH0376591B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements

Landscapes

  • Element Separation (AREA)
JP59027483A 1984-02-16 1984-02-16 縦型ｍｏｓｆｅｔの製造方法 Granted JPS60170975A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59027483A JPS60170975A (ja) 1984-02-16 1984-02-16 縦型ｍｏｓｆｅｔの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59027483A JPS60170975A (ja) 1984-02-16 1984-02-16 縦型ｍｏｓｆｅｔの製造方法

Publications (2)

Publication Number Publication Date
JPS60170975A JPS60170975A (ja) 1985-09-04
JPH0376591B2 true JPH0376591B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-12-05

Family

ID=12222374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59027483A Granted JPS60170975A (ja) 1984-02-16 1984-02-16 縦型ｍｏｓｆｅｔの製造方法

Country Status (1)

Country Link
JP (1) JPS60170975A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111445A (ja) * 1985-11-08 1987-05-22 Matsushita Electronics Corp 半導体装置の製造方法
US5702957A (en) * 1996-09-20 1997-12-30 Lsi Logic Corporation Method of making buried metallization structure
CN102412307A (zh) * 2010-09-26 2012-04-11 上海华虹Nec电子有限公司 垂直的齐纳二极管结构及其制备方法

Also Published As

Publication number Publication date
JPS60170975A (ja) 1985-09-04

Similar Documents

Publication Publication Date Title
US4463492A (en) Method of forming a semiconductor device on insulating substrate by selective amorphosization followed by simultaneous activation and reconversion to single crystal state
JPH0355984B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0656882B2 (ja) スタックドｍｏｓデバイスの製造方法
JPH0671043B2 (ja) シリコン結晶体構造の製造方法
JPH0640582B2 (ja) 絶縁ゲ−ト電界効果トランジスタの製造方法
JPS6361777B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2585329B2 (ja) 集積バイポーラトランジスタのコレクタコンタクト
JPH065706B2 (ja) ＢｉＣＭＯＳ素子の製造方法
JPH0376591B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US6080612A (en) Method of forming an ultra-thin SOI electrostatic discharge protection device
JPS5984435A (ja) 半導体集積回路及びその製造方法
JPH0575041A (ja) Ｃｍｏｓ半導体装置
JPH0346980B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH06302826A (ja) 絶縁ゲート電界効果トランジスタ及びその製造方法
JPH02232929A (ja) 埋込層を備えた半導体装置
JP2808901B2 (ja) 半導体装置の製造方法
JPH0793384B2 (ja) 半導体装置の製造方法
JPH0579186B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0621077A (ja) 半導体装置およびその製造方法
JPH0590594A (ja) 縦型ｍｏｓ電界効果トランジスタの製造方法
JPS6376470A (ja) 半導体装置の製造方法
JPS6197973A (ja) Ｍｏｓｆｅｔの製造方法
JPH05283617A (ja) 半導体装置およびその製造方法
JPH01278767A (ja) 半導体装置の製造方法
JPH08111423A (ja) 半導体装置およびその製造方法