JPH0373959B2 - - Google Patents

Info

Publication number
JPH0373959B2
JPH0373959B2 JP57226301A JP22630182A JPH0373959B2 JP H0373959 B2 JPH0373959 B2 JP H0373959B2 JP 57226301 A JP57226301 A JP 57226301A JP 22630182 A JP22630182 A JP 22630182A JP H0373959 B2 JPH0373959 B2 JP H0373959B2
Authority
JP
Japan
Prior art keywords
address
fuse means
fuse
circuit
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57226301A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59117794A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP57226301A priority Critical patent/JPS59117794A/ja
Publication of JPS59117794A publication Critical patent/JPS59117794A/ja
Publication of JPH0373959B2 publication Critical patent/JPH0373959B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70Masking faults in memories by using spares or by reconfiguring
    • G11C29/78Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/781Masking faults in memories by using spares or by reconfiguring using programmable devices combined in a redundant decoder

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP57226301A 1982-12-24 1982-12-24 ダイナミック型ram Granted JPS59117794A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57226301A JPS59117794A (ja) 1982-12-24 1982-12-24 ダイナミック型ram

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57226301A JPS59117794A (ja) 1982-12-24 1982-12-24 ダイナミック型ram

Publications (2)

Publication Number Publication Date
JPS59117794A JPS59117794A (ja) 1984-07-07
JPH0373959B2 true JPH0373959B2 (ko) 1991-11-25

Family

ID=16843061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57226301A Granted JPS59117794A (ja) 1982-12-24 1982-12-24 ダイナミック型ram

Country Status (1)

Country Link
JP (1) JPS59117794A (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2576132B1 (fr) * 1985-01-15 1990-06-29 Eurotechnique Sa Memoire en circuit integre
JPH0766660B2 (ja) * 1985-03-25 1995-07-19 株式会社日立製作所 ダイナミツク型ram
KR940008147B1 (ko) * 1991-11-25 1994-09-03 삼성전자 주식회사 저전력 데이타 리텐션 기능을 가지는 반도체 메모리장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774899A (en) * 1980-06-30 1982-05-11 Inmos Corp Mos memory chip with redundancy
JPS58108099A (ja) * 1981-12-07 1983-06-28 Fujitsu Ltd ヒユ−ズ切断回路
JPS58175194A (ja) * 1982-04-05 1983-10-14 Toshiba Corp 半導体集積回路装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5774899A (en) * 1980-06-30 1982-05-11 Inmos Corp Mos memory chip with redundancy
JPS58108099A (ja) * 1981-12-07 1983-06-28 Fujitsu Ltd ヒユ−ズ切断回路
JPS58175194A (ja) * 1982-04-05 1983-10-14 Toshiba Corp 半導体集積回路装置

Also Published As

Publication number Publication date
JPS59117794A (ja) 1984-07-07

Similar Documents

Publication Publication Date Title
US5325334A (en) Column redundancy circuit for a semiconductor memory device
US6384674B2 (en) Semiconductor device having hierarchical power supply line structure improved in operating speed
US5617365A (en) Semiconductor device having redundancy circuit
US20020031036A1 (en) Semiconductor memory device and memory system
US5485424A (en) Semiconductor memory and redundant-address writing method
EP0142127A2 (en) Redundancy circuit for a semiconductor memory device
US4587639A (en) Static semiconductor memory device incorporating redundancy memory cells
US5844298A (en) Method and apparatus for programming anti-fuses
JPH06216328A (ja) 集積回路ダイの一部を使用するための構成体
EP0881571B1 (en) Semiconductor memory device with redundancy
US5703816A (en) Failed memory cell repair circuit of semiconductor memory
JPS59142800A (ja) 半導体集積回路装置
US4987560A (en) Semiconductor memory device
US6212114B1 (en) Methods of identifying defects in an array of memory cells and related integrated circuitry
EP0905624A2 (en) Semiconductor memory having redundancy circuit
JP2760326B2 (ja) 半導体記憶装置
JP2001067893A (ja) 電気フューズ素子を備えた半導体集積回路装置
US6366509B2 (en) Method and apparatus for repairing defective columns of memory cells
US6812532B2 (en) Semiconductor device with address programming circuit
EP0329182A2 (en) Decoder buffer circuit incorporated in semiconductor memory device
JPH0373959B2 (ko)
JPS6292200A (ja) 半導体メモリで使用する行デコーダ回路
US6975548B2 (en) Memory device having redundant memory cell
JPH0676593A (ja) 半導体メモリ装置
JPS59152597A (ja) メモリ回路