JPH0373093B2 - - Google Patents
Info
- Publication number
- JPH0373093B2 JPH0373093B2 JP60257283A JP25728385A JPH0373093B2 JP H0373093 B2 JPH0373093 B2 JP H0373093B2 JP 60257283 A JP60257283 A JP 60257283A JP 25728385 A JP25728385 A JP 25728385A JP H0373093 B2 JPH0373093 B2 JP H0373093B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- diameter
- ray
- thin wire
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007787 solid Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000001015 X-ray lithography Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000192 extended X-ray absorption fine structure spectroscopy Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60257283A JPS62117246A (ja) | 1985-11-15 | 1985-11-15 | 高輝度ｘ線発生用標的 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60257283A JPS62117246A (ja) | 1985-11-15 | 1985-11-15 | 高輝度ｘ線発生用標的 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62117246A JPS62117246A (ja) | 1987-05-28 |
| JPH0373093B2 true JPH0373093B2 (US20020051482A1-20020502-M00012.png) | 1991-11-20 |
Family
ID=17304222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60257283A Granted JPS62117246A (ja) | 1985-11-15 | 1985-11-15 | 高輝度ｘ線発生用標的 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62117246A (US20020051482A1-20020502-M00012.png) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04275894A (ja) * | 1991-02-07 | 1992-10-01 | Mitsubishi Electric Corp | 産業ロボットの旋回装置 |
| WO2000019496A1 (fr) * | 1998-09-28 | 2000-04-06 | Hitachi, Ltd. | Generateur au plasma laser de rayons x, dispositif d'alignement de semiconducteurs possedant ce generateur et procede d'exposition de semiconducteurs |
| JP4005551B2 (ja) * | 2003-03-19 | 2007-11-07 | 日本電信電話株式会社 | Ｘ線及び高エネルギー粒子発生装置とその発生方法 |
| KR20070100868A (ko) | 2005-01-12 | 2007-10-12 | 가부시키가이샤 니콘 | 레이저 플라즈마 ｅｕｖ 광원, 타겟 부재, 테이프 부재,타겟 부재의 제조 방법, 타겟의 공급 방법, 및 ｅｕｖ 노광장치 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60143600A (ja) * | 1983-11-24 | 1985-07-29 | マツクス・プランク・ゲゼルシヤフト ツール フエールデルンク デア ビツセンシヤフテン エー フアウ | ホットプラズマ発生装置 |
-
1985
- 1985-11-15 JP JP60257283A patent/JPS62117246A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60143600A (ja) * | 1983-11-24 | 1985-07-29 | マツクス・プランク・ゲゼルシヤフト ツール フエールデルンク デア ビツセンシヤフテン エー フアウ | ホットプラズマ発生装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62117246A (ja) | 1987-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |