JPH0370381B2 - - Google Patents
Info
- Publication number
- JPH0370381B2 JPH0370381B2 JP57220581A JP22058182A JPH0370381B2 JP H0370381 B2 JPH0370381 B2 JP H0370381B2 JP 57220581 A JP57220581 A JP 57220581A JP 22058182 A JP22058182 A JP 22058182A JP H0370381 B2 JPH0370381 B2 JP H0370381B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- substrate
- memory cell
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 235000012239 silicon dioxide Nutrition 0.000 description 18
- 239000000377 silicon dioxide Substances 0.000 description 18
- 238000003860 storage Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- XUIMIQQOPSSXEZ-NJFSPNSNSA-N silicon-30 atom Chemical compound [30Si] XUIMIQQOPSSXEZ-NJFSPNSNSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- OFHCOWSQAMBJIW-AVJTYSNKSA-N alfacalcidol Chemical compound C1(/[C@@H]2CC[C@@H]([C@]2(CCC1)C)[C@H](C)CCCC(C)C)=C\C=C1\C[C@@H](O)C[C@H](O)C1=C OFHCOWSQAMBJIW-AVJTYSNKSA-N 0.000 description 1
- 230000005260 alpha ray Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor
Landscapes
- Semiconductor Memories (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57220581A JPS59110154A (ja) | 1982-12-16 | 1982-12-16 | 半導体メモリセル |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57220581A JPS59110154A (ja) | 1982-12-16 | 1982-12-16 | 半導体メモリセル |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59110154A JPS59110154A (ja) | 1984-06-26 |
| JPH0370381B2 true JPH0370381B2 (ko) | 1991-11-07 |
Family
ID=16753211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57220581A Granted JPS59110154A (ja) | 1982-12-16 | 1982-12-16 | 半導体メモリセル |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59110154A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59129461A (ja) * | 1983-01-13 | 1984-07-25 | Fujitsu Ltd | 半導体装置とその製造方法 |
| JPH0669081B2 (ja) * | 1985-01-23 | 1994-08-31 | 三菱電機株式会社 | 半導体メモリの製造方法 |
| JPS61177742A (ja) * | 1985-02-01 | 1986-08-09 | Mitsubishi Electric Corp | 半導体装置 |
| JP2595945B2 (ja) * | 1986-11-13 | 1997-04-02 | 三菱電機株式会社 | 半導体記憶装置 |
-
1982
- 1982-12-16 JP JP57220581A patent/JPS59110154A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59110154A (ja) | 1984-06-26 |
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