JPH0369879B2 - - Google Patents

Info

Publication number
JPH0369879B2
JPH0369879B2 JP58001868A JP186883A JPH0369879B2 JP H0369879 B2 JPH0369879 B2 JP H0369879B2 JP 58001868 A JP58001868 A JP 58001868A JP 186883 A JP186883 A JP 186883A JP H0369879 B2 JPH0369879 B2 JP H0369879B2
Authority
JP
Japan
Prior art keywords
trimethylaluminum
crystal
group
aluminum
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58001868A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59128299A (ja
Inventor
Isao Hino
Tooru Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP186883A priority Critical patent/JPS59128299A/ja
Publication of JPS59128299A publication Critical patent/JPS59128299A/ja
Publication of JPH0369879B2 publication Critical patent/JPH0369879B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP186883A 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法 Granted JPS59128299A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP186883A JPS59128299A (ja) 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP186883A JPS59128299A (ja) 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS59128299A JPS59128299A (ja) 1984-07-24
JPH0369879B2 true JPH0369879B2 (enrdf_load_stackoverflow) 1991-11-05

Family

ID=11513521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP186883A Granted JPS59128299A (ja) 1983-01-10 1983-01-10 燐化アルミニウム・インジウム単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS59128299A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761269A (en) * 1986-06-12 1988-08-02 Crystal Specialties, Inc. Apparatus for depositing material on a substrate
US4901670A (en) * 1988-08-22 1990-02-20 Santa Barbara Research Center Elemental mercury source for metal-organic chemical vapor deposition

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4834798A (enrdf_load_stackoverflow) * 1971-09-06 1973-05-22
JPS4876472A (enrdf_load_stackoverflow) * 1972-01-13 1973-10-15

Also Published As

Publication number Publication date
JPS59128299A (ja) 1984-07-24

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