JPH0368157A - High frequency thick film integrated circuit device - Google Patents

Abstract

PURPOSE:Not only to easily solder a heat sink but also to make a device stable in quality by a method wherein groove-like cuts are provided to an electrode formed on the rear side of a ceramic board from its peripheral part. CONSTITUTION:Cuts are provided to a conductor 2 formed on the rear side of a ceramic board 1 from its peripheral part. As ceramic is exposed only at the cuts, the cuts are not wet with solder and gaps are induced. Therefore, when a heat sink is joined to the conductor 2, it can be easily joined to the conductor 2 by soldering as gas is discharged outside through the cuts.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] This invention relates to the structure of a high-frequency thick film integrated circuit device (hereinafter referred to as high-frequency hybrid 1c).

[Conventional technology]

FIG. 4 is a diagram showing a conventional high-frequency hybrid IC, in which (1a) is a ceramic substrate with a circuit on its surface, (3a) is a heat sink for dissipating heat, and (7) is a ceramic substrate (1a). ) and the heat sink (3a) are shown. FIG. 5 is a side view and a bottom view of the ceramic substrate (1a), and the entire back surface is metalized with a conductor. FIG. 6 is a diagram showing a heat sink [3a], which is usually made of steel and plated with tin to a thickness of about 10 μm.

Next, the operation will be explained. First, about 200″O (
Place a heat sink (
After a predetermined time has elapsed, flux and solder is placed on the ceramic substrate (1a), and the ceramic substrate (1a) is placed on the ceramic substrate (1a).
By moving a) left and right and vertically many times, solder (
7) Join.

[Problem to be solved by the invention]

Conventional high-frequency hybrid ICs were constructed as described above, and it was difficult for the gas generated during soldering to escape, so the ceramic substrate had to be moved many times over time, and the gas could not escape completely. In this case, if the cavity exists under a heat generating element such as a transistor mounted on a ceramic substrate, the generated heat will be difficult to escape to the heat sink, so the transistor There were problems such as destruction and defective electrical characteristics of the high-frequency hybrid IC.

This invention was made to solve the above-mentioned problems, and aims to provide a high-frequency hybrid IC that facilitates soldering and has stable quality.

[Means to solve the problem]

The high-frequency hybrid IC according to the present invention has a groove-shaped cut in the metallized conductor placed on a ceramic substrate from the outer periphery.

[Effect]

In the high-frequency hybrid IC according to the present invention, gas generated from flux and solder escapes from the blank portion of the conductor on the back surface of the ceramic substrate, and the continuous bonding area becomes smaller.

[Example] Hereinafter, an example of the present invention will be described with reference to the drawings. 1st
In the figure, (1) is the ceramic part of the ceramic substrate;
(2) shows a conductor applied to the back surface of the ceramic substrate (1).As shown in the figure, the conductor (2) has a cut at the center, so that only that part of the ceramic is exposed. That is, this cut portion does not wet the solder and creates a gap, so gas passes through and escapes during solder bonding, making it difficult for gas to remain.

Also, due to the cuts, the maximum continuous bonding area is 1/2 that of conventional adhesives.
This makes soldering easier.

Figures 2 and 3 show other embodiments of the present invention, and the effect may be even better if a conductor pattern is formed as shown in the figure. need to be designed.

〔Effect of the invention〕

As described above, according to the present invention, since the groove-shaped gap is provided between the ceramic substrate and the heat sink, gas generated during soldering can be easily released, and the groove reduces the maximum bonding area. This has the effect of shortening the time required for the process and providing a high-frequency thick film integrated circuit device with stable quality and few remaining cavities.

[Brief explanation of drawings]

FIGS. 1(a) and 1(b) are a front view and a bottom view showing the shape of a conductor on the back surface of a ceramic substrate showing an embodiment of the present invention,
2 and 3 are a front view and a bottom view of a ceramic substrate showing another embodiment of the present invention, and FIG. 4 is a front view and a plan view of a conventional high frequency thick film circuit device after assembly. , FIG. 5 is a corrected view and a simplified bottom view showing a conventional ceramic substrate, and FIG. 6 is a plan view and a front view showing a conventional heat sink. In the figure, (1) is the ceramic part of the ceramic substrate;
(2) indicates the conductor part. In the figures, the same reference numerals indicate the same or equivalent parts. Figure 1 2: Conductor part

Claims (1)

[Claims] A high frequency thick film integrated circuit device having a structure in which a ceramic substrate having a circuit and a metal heat sink are joined by soldering, characterized in that the electrode on the back side of the ceramic substrate has a cut extending from the outer periphery to the inside. Thick film integrated circuit device for high frequency.