JPH10242330A - Substrate for power module and manufacture thereof - Google Patents

Substrate for power module and manufacture thereof

Info

Publication number
JPH10242330A
JPH10242330A JP9052530A JP5253097A JPH10242330A JP H10242330 A JPH10242330 A JP H10242330A JP 9052530 A JP9052530 A JP 9052530A JP 5253097 A JP5253097 A JP 5253097A JP H10242330 A JPH10242330 A JP H10242330A
Authority
JP
Japan
Prior art keywords
chip
substrate
solder
ceramic substrate
power module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9052530A
Other languages
Japanese (ja)
Inventor
Masami Sakuraba
正美 桜庭
Masami Kimura
正美 木村
Masaya Takahara
昌也 高原
Toshikazu Tanaka
敏和 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Holdings Co Ltd
Original Assignee
Dowa Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dowa Mining Co Ltd filed Critical Dowa Mining Co Ltd
Priority to JP9052530A priority Critical patent/JPH10242330A/en
Publication of JPH10242330A publication Critical patent/JPH10242330A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H01L2224/26152—Auxiliary members for layer connectors, e.g. spacers being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/26175—Flow barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To prevent the deviation in position of an Si chip by forming a semiconductor mounting section of a metal plate thinner than the other part, in a junction substrate made by joining metal plates to a ceramic substrate. SOLUTION: To both faces of a ceramic substrate 1, copper flat plates of, for example, 0.3mm and 0.25mm are directly bonded as a circuit board 2 and a radiation plate 3 respectively at a given temperature in an inactive atmosphere. After that, etching resist is applied onto the circuit board 2 and a pattern is printed on the resist and the resist is hardened and then an etching is conducted to form a copper pattern. Nextly, only a chip mounting section is half-etched to make the thickness of the section 4 smaller than the other metallic part to obtain a mounting section of, for example, 0.1mm thickness. Then, a solder plate of 0.10mm thickness in the same size as that of an Si chip is mounted on the chip mounting section and then an Si chips is mounted on the solder plate and then a heat treatment is conducted in a reduced atmosphere to solder the Si chip. As a result, a solder flow can be prevented and thereby the deviation in position of the chip can be prevented.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】TECHNICAL FIELD OF THE INVENTION

【０００２】本発明は高強度セラミックス金属複合体か
らなる回路基板に関し、更に詳しくは集積回路や半導体
部品の実装に好適な高ヒートサイクル性を有するパワー
モジュール基板に関するものである。The present invention relates to a circuit board made of a high-strength ceramic-metal composite, and more particularly to a power module board having a high heat cycle property suitable for mounting an integrated circuit or a semiconductor component.

【０００３】[0003]

【従来の技術】従来より、パワートランジスタ、ＩＧＢ
Ｔ、ＩＰＭ、パワーモジュール等熱が大量に発生する電
力デバイス用の実装基板としては、導電回路を有するセ
ラミックス回路基板が広く用いられており、特に近年で
は、高熱伝導率を有する回路基板を製造するために、セ
ラミックス基板の製造・導電回路の形成などに様々な工
夫がなされている。2. Description of the Related Art Conventionally, power transistors, IGB
Ceramic circuit boards having conductive circuits are widely used as mounting boards for power devices such as T, IPM, and power modules that generate a large amount of heat. Particularly in recent years, circuit boards having high thermal conductivity have been manufactured. For this reason, various devices have been devised for manufacturing a ceramic substrate, forming a conductive circuit, and the like.

【０００４】図１は、パワーモジュール用基板を示し、
パワーモジュール用基板として用いられるセラミックス
基板１はアルミナ基板や窒化アルミニウムや窒化ケイ素
等の窒化物であり、これらの基板１の少なくとも片面に
銅板を直接接合法で接合したり、あるいは活性金属ろう
材を介して接合されている。FIG. 1 shows a power module substrate.
The ceramic substrate 1 used as a power module substrate is an alumina substrate or a nitride such as aluminum nitride or silicon nitride. Are joined through.

【０００５】接合された金属は、所定形状の回路面を有
するようにエッチング処理により形成し、回路面にメッ
キ処理を施したものに半導体チップとしてのＳｉチップ
を搭載して、半導体モジュール基板として使用してい
る。[0005] The bonded metal is formed by etching so as to have a circuit surface of a predetermined shape, and an Si chip as a semiconductor chip is mounted on the circuit surface which has been subjected to plating, and is used as a semiconductor module substrate. doing.

【０００６】[0006]

【発明が解決しようとする課題】しかしながら上記パワ
ーモジュール用基板上にＳｉチップを搭載する場合に
は、半田を用いて接着するのが一般的であるが、半田づ
けの際に半田自体が流れたり、チップの位置がずれると
いう問題があった。However, when a Si chip is mounted on the above-mentioned power module substrate, it is common to use a solder for bonding. However, the solder itself may flow during the soldering. However, there is a problem that the position of the chip is shifted.

【０００７】この問題を解決する一手段として、Ｓｉチ
ップ搭載部パターンの周囲部に穴を設け、半田流れを防
止していたが、この方法でも一部の半田流れの流出を止
めることはできず、不良品の発生を防ぐことはできなか
った。As one means for solving this problem, a hole is provided around the periphery of the Si chip mounting portion pattern to prevent the flow of solder. However, even this method cannot stop a part of the flow of the solder flow. However, the occurrence of defective products could not be prevented.

【０００８】本発明は、新規な手段を開発することによ
ってＳｉチップの位置ずれを防止したパワーモジュール
用基板及びその製造法を提供するものである。An object of the present invention is to provide a power module substrate in which the displacement of a Si chip is prevented by developing a new means, and a method of manufacturing the same.

【０００９】[0009]

【課題を解決するための手段】本発明者らは、斯かる課
題を解決するために鋭意研究したところ、従来のような
Ｓｉチップ搭載部周囲に穴を設けることに代えて、チッ
プ搭載部の金属部分を他の部分より薄くすることによっ
て半田流れを防止し、チップ位置ずれを防ぐものであ
る。Means for Solving the Problems The inventors of the present invention have made intensive studies to solve the above-mentioned problems. As a result, instead of providing a hole around the Si chip mounting portion as in the conventional case, the chip mounting portion is not provided. By making the metal part thinner than the other parts, the flow of solder is prevented, and the chip position is prevented from shifting.

【００１０】即ち本発明のパワーモジュール用基板は、
セラミックス基板と金属板との接合基板において金属上
の半導体搭載部の厚さが、他の金属部分より薄いことを
特徴とする。That is, the power module substrate of the present invention comprises:
In the bonding substrate of the ceramic substrate and the metal plate, the thickness of the semiconductor mounting portion on the metal is thinner than other metal portions.

【００１１】上記セラミックス基板は、Ａｌ2 Ｏ3 、Ａ
１Ｎ、Ｓｉ3 Ｎ4 から選ばれる少なくとも１種のセラミ
ックス基板であることを特徴とする。The ceramic substrate is made of Al 2 O 3 , A
It is characterized by being at least one type of ceramic substrate selected from 1N and Si 3 N 4 .

【００１２】上記金属板は、銅またはアルミニウム板で
ある。[0012] The metal plate is a copper or aluminum plate.

【００１３】上記接合は、金属板が平板状又は回路パタ
ーン状のものをセラミックス基板に直接接合あるいはろ
う接合することを特徴とする。The above-mentioned joining is characterized in that a flat or circuit-patterned metal plate is directly joined or brazed to a ceramic substrate.

【００１４】本発明のパワーモジュール用基板の製造法
では、セラミックス基板と金属板との接合方法において
セラミックス基板に接合せしめた金属をエッチング処理
して回路を形成し、この回路上の半導体搭載部の厚さを
他の回路部分より薄くしたことを特徴とする。In the method for manufacturing a power module substrate of the present invention, a circuit is formed by etching a metal bonded to a ceramic substrate in the method for bonding a ceramic substrate and a metal plate, and a semiconductor mounting portion on the circuit is formed. It is characterized in that the thickness is made thinner than other circuit parts.

【００１５】これらのセラミックス基板に接合する金属
は、銅、アルミニウム材及びこれらの合金であり、回路
形成後に回路面上にニッケルメッキを施すこともある。Metals to be bonded to these ceramic substrates are copper, aluminum, and alloys thereof. Nickel plating may be applied to the circuit surface after the circuit is formed.

【００１６】回路面に半導体チップであるＳｉチップを
搭載する場合に、従来は半田を用いて接合させているが
半田自体が流れたりしてチップの位置がずれることがあ
ることから、これを防止するためにチップ搭載部周辺部
分の金属に穴を開けたり、あるいはチップ搭載周辺部に
ソルダーレジストを塗布したりしているが、本発明では
チップ搭載部の金属部分を他の部分より薄くして半田流
れを防止し、チップの位置ずれを防止している。Conventionally, when a Si chip, which is a semiconductor chip, is mounted on a circuit surface, bonding is performed using solder. However, the position of the chip may be shifted due to the flow of the solder itself. To make a hole in the metal around the chip mounting part, or to apply a solder resist to the chip mounting peripheral part, in the present invention, the metal part of the chip mounting part is made thinner than other parts It prevents solder flow and prevents chip displacement.

【００１７】この場合チップ搭載部を他の部分より薄く
する手段としては二段エッチングを行なうが、通常金属
板の厚みが０．３ｍｍであれば０．０５〜０．１５ｍｍ
の厚みを有するようにエッチングするのが好ましい。In this case, as a means for making the chip mounting portion thinner than other portions, two-stage etching is performed. Usually, if the thickness of the metal plate is 0.3 mm, it is 0.05 to 0.15 mm.
It is preferable to perform etching so as to have a thickness of.

【００１８】[0018]

【発明の実施の形態】以下図面によって本発明の実施例
を説明する。Embodiments of the present invention will be described below with reference to the drawings.

【００１９】（実施例１）(Embodiment 1)

【００２０】セラミックス基板１として、５３×２９×
０．６３５ｍｍのＡｌ2 Ｏ3 基板を用い、この基板１の
両面に０．３ｍｍと０．２５ｍｍの銅平板をそれぞれ回
路板２と放熱板３として不活性雰囲気下、１０６０℃で
直接接合した後、回路板２にエッチングレジストを塗布
して印刷硬化し、塩化第二鉄溶液でエッチング処理を行
い図１に示すような銅パターンを形成した。As the ceramic substrate 1, 53 × 29 ×
After using a 0.635 mm Al 2 O 3 substrate, 0.3 mm and 0.25 mm copper flat plates are directly bonded on both surfaces of the substrate 1 at 1060 ° C. in an inert atmosphere as a circuit board 2 and a heat sink 3, respectively. Then, an etching resist was applied to the circuit board 2, printed and cured, and etched with a ferric chloride solution to form a copper pattern as shown in FIG.

【００２１】次いでチップ搭載部のみをハーフエッチン
グ処理することによって図２の回路基板断面図に示すよ
うにチップ搭載部４の厚みが他の金属部分より薄くなる
ようにして０．１０ｍｍ厚の搭載部を得た。Then, only the chip mounting portion is half-etched so that the thickness of the chip mounting portion 4 is smaller than that of other metal portions as shown in the sectional view of the circuit board of FIG. I got

【００２２】次いで上記チップ搭載部においてＳｉチッ
プのサイズに０．１０ｍｍ厚の半田板を置き、その上に
Ｓｉチップを載せて、３６０℃、還元雰囲気中で加熱し
て半田付けをした。チップ搭載を複数個の回路基板に５
０ヶ行ったところ、いずれにも半田流れやチップの位置
ずれ等の不具合品はみられなかった。Next, a 0.10 mm thick solder plate was placed on the chip mounting portion at the size of the Si chip, the Si chip was mounted thereon, and the soldering was performed by heating at 360 ° C. in a reducing atmosphere. 5 chips mounted on multiple circuit boards
When the test was performed 0 times, no defective products such as solder flow and chip displacement were found in any case.

【００２３】（実施例２）(Embodiment 2)

【００２４】セラミックス基板１として、５３×２９×
０．６３５ｍｍのＡ１Ｎ基板を用い、その両面に０．３
ｍｍと０．１５ｍｍの銅平板Ａｇ−Ｃｕ−Ｔｉ−ＴｉＯ
2 からなる活性金属ろう材を用いて加熱接合した。As the ceramic substrate 1, 53 × 29 ×
Using an A1N substrate of 0.635 mm, 0.3
mm and 0.15 mm copper flat plate Ag-Cu-Ti-TiO
Heat bonding was performed using an active metal brazing material made of No. 2 .

【００２５】得られた接合体を用いて実施例１に示す方
法で図２に示した回路基板を得て、同様にＳｉチップを
複数個の回路基板に５０ヶ搭載して半田付けをしたとこ
ろ、いずれにも半田流れやチップの位置ずれ等の不具合
品は見られなかった。The circuit board shown in FIG. 2 was obtained by the method shown in Example 1 using the obtained joined body, and 50 Si chips were similarly mounted on a plurality of circuit boards and soldered. No defective products such as solder flow or chip displacement were found in any of them.

【００２６】（実施例３）(Embodiment 3)

【００２７】実施例２で用いたＡ１Ｎ基板に代えてＳｉ
3 Ｎ4 基板を用いた他は、まったく同一な手段で図２に
示す回路基板を得た。これらも同様に複数個の回路基板
に５０ヶのＳｉチップを搭載したところ、いずれにも半
田流れや位置ずれ等の不具合品は見られなかった。Instead of the A1N substrate used in Example 2, Si
3 N 4 except for using the substrate, to obtain a circuit board shown in FIG. 2 in exactly the same way. Similarly, when 50 Si chips were mounted on a plurality of circuit boards, no defective products such as solder flow and displacement were found in any of them.

【００２８】（比較例１）(Comparative Example 1)

【００２９】セラミックス基板１として、５３×２９×
０．６３５ｍｍのＡｌ2 Ｏ3 基板を用い、その両面に
０．３ｍｍと０．２５ｍｍの銅平板をそれぞれ回路板２
と放熱板３として不活性雰囲気下、１０６０℃で直接接
合した後、エッチングレジストを塗布して印刷硬化し、
塩化第二鉄溶液でエッチング処理を行い図１に示すよう
な銅パターンを形成した。As the ceramic substrate 1, 53 × 29 ×
A 0.635 mm Al 2 O 3 substrate is used, and 0.3 mm and 0.25 mm copper flat plates are provided on both sides of the circuit board 2.
After direct bonding at 1060 ° C. in an inert atmosphere as a heat sink 3, an etching resist is applied and printed and cured,
Etching was performed with a ferric chloride solution to form a copper pattern as shown in FIG.

【００３０】次いでＮｉメッキをパターン部に施した基
板１に搭載するＳｉチップの大きさに印刷方式でクリー
ム半田を印刷し、その上にＳｉチップを３６０℃で半田
付けしたところ、５０ヶの中で１割近い不具合品が見ら
れた。Next, cream solder was printed by the printing method on the size of the Si chip mounted on the substrate 1 on which the Ni plating was applied to the pattern portion, and the Si chip was soldered thereon at 360 ° C. Approximately 10% of defective products were found.

【００３１】[0031]

【発明の効果】上述のように本発明パワーモジュール基
板は、従来構造上やむを得なかった半田流れをなくすこ
とができることによって、チップの位置ずれという問題
も解決することができることから品質管理工程上コスト
削減に大いに寄与できるものである。As described above, the power module substrate of the present invention can eliminate the problem of chip displacement by eliminating the solder flow which was unavoidable in the conventional structure, thereby reducing the cost in the quality control process. It can greatly contribute.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明のパワーモジュール用基板の製造工程を
示すための平面図である。FIG. 1 is a plan view showing a process for manufacturing a power module substrate of the present invention.

【図２】本発明のパワーモジュール用基板の断面図であ
る。FIG. 2 is a cross-sectional view of a power module substrate of the present invention.

【符号の説明】[Explanation of symbols]

１ セラミックス基板 ２ 回路板 ３ 放熱板 ４ チップ搭載部 DESCRIPTION OF SYMBOLS 1 Ceramic substrate 2 Circuit board 3 Heat sink 4 Chip mounting part

───────────────────────────────────────────────────── フロントページの続き (72)発明者 田中 敏和 東京都千代田区丸の内一丁目８番２号 同 和鉱業株式会社内 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Toshikazu Tanaka 1-8-2 Marunouchi, Chiyoda-ku, Tokyo Dowa Mining Co., Ltd.

Claims (5)

【特許請求の範囲】[Claims] 【請求項１】 セラミックス基板と金属板との接合基板
において金属上の半導体搭載部の厚さが、他の金属部分
より薄いことを特徴とするパワーモジュール用基板。1. A power module substrate, wherein a thickness of a semiconductor mounting portion on a metal is smaller than that of another metal portion in a bonding substrate of a ceramic substrate and a metal plate. 【請求項２】 上記セラミックス基板は、Ａｌ2 Ｏ3 、
Ａ１Ｎ、Ｓｉ3 Ｎ4から選ばれる少なくとも１種のセラ
ミックス基板であることを特徴とする請求項１記載のパ
ワーモジュール用基板。2. The method according to claim 1, wherein the ceramic substrate is made of Al 2 O 3 ,
A1N, a power module substrate according to claim 1, wherein the at least one ceramic substrate selected from Si 3 N 4. 【請求項３】 上記金属板は、銅またはアルミニウム板
であることを特徴とする請求項１または２記載のパワー
モジュール用基板。3. The power module substrate according to claim 1, wherein the metal plate is a copper or aluminum plate. 【請求項４】 上記接合は金属が平板状又は回路パター
ン状のものをセラミックス基板に直接接合あるいはろう
接合することを特徴とする請求項１、２または３記載の
パワーモジュール用基板。4. The power module substrate according to claim 1, wherein said bonding is performed by directly bonding or brazing a metal plate or circuit pattern to the ceramic substrate. 【請求項５】 セラミックス基板と金属板との接合方法
においてセラミックス基板に接合せしめた金属板をエッ
チング処理して回路を形成し、この回路上の半導体搭載
部の厚さを他の回路部分より薄くしたことを特徴とする
パワーモジュール用基板の製造法。5. A circuit is formed by etching a metal plate bonded to a ceramic substrate in a method of bonding a ceramic substrate and a metal plate to form a circuit, and the thickness of a semiconductor mounting portion on the circuit is made thinner than other circuit portions. A method for manufacturing a power module substrate, comprising:
JP9052530A 1997-02-21 1997-02-21 Substrate for power module and manufacture thereof Pending JPH10242330A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9052530A JPH10242330A (en) 1997-02-21 1997-02-21 Substrate for power module and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9052530A JPH10242330A (en) 1997-02-21 1997-02-21 Substrate for power module and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH10242330A true JPH10242330A (en) 1998-09-11

Family

ID=12917321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9052530A Pending JPH10242330A (en) 1997-02-21 1997-02-21 Substrate for power module and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH10242330A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1039539A3 (en) * 1999-03-26 2004-02-04 Kabushiki Kaisha Toshiba Ceramic circuit board
CN100359674C (en) * 1998-11-04 2008-01-02 株式会社东芝 Module type semi-conductor device
JP2009173541A (en) * 2009-04-30 2009-08-06 Toshiba Corp Process of manufacturing ceramic circuit board
EP2573809A4 (en) * 2010-05-18 2017-05-24 Toyota Jidosha Kabushiki Kaisha Semiconductor device and method for manufacturing the same
CN108615717A (en) * 2018-07-20 2018-10-02 井敏 A kind of metallized ceramic substrate, method for preparing substrate and substrate and chip welding method
US10937715B2 (en) 2015-05-27 2021-03-02 NGK Electronics Devices, Inc. Substrate for power module, collective substrate for power modules, and method for manufacturing substrate for power module

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100359674C (en) * 1998-11-04 2008-01-02 株式会社东芝 Module type semi-conductor device
EP1039539A3 (en) * 1999-03-26 2004-02-04 Kabushiki Kaisha Toshiba Ceramic circuit board
JP2009173541A (en) * 2009-04-30 2009-08-06 Toshiba Corp Process of manufacturing ceramic circuit board
EP2573809A4 (en) * 2010-05-18 2017-05-24 Toyota Jidosha Kabushiki Kaisha Semiconductor device and method for manufacturing the same
US10937715B2 (en) 2015-05-27 2021-03-02 NGK Electronics Devices, Inc. Substrate for power module, collective substrate for power modules, and method for manufacturing substrate for power module
CN108615717A (en) * 2018-07-20 2018-10-02 井敏 A kind of metallized ceramic substrate, method for preparing substrate and substrate and chip welding method

Similar Documents

Publication Publication Date Title
US5561322A (en) Semiconductor chip package with enhanced thermal conductivity
JP4600065B2 (en) Semiconductor device and manufacturing method thereof
JP3333409B2 (en) Semiconductor module
JP3648189B2 (en) Metal-ceramic circuit board
JP2010238753A (en) Heat radiating member, and module using the same
JP4765110B2 (en) Metal-ceramic bonding substrate and manufacturing method thereof
JP2002343911A (en) Substrate
JP6904094B2 (en) Manufacturing method of insulated circuit board
JP3531133B2 (en) Power module substrate and method of manufacturing the same
JPH08250823A (en) Ceramic circuit board
JPH10242330A (en) Substrate for power module and manufacture thereof
JP2010050415A (en) Substrate for power module and method of manufacturing the same
JP2000269392A (en) Semiconductor module and heat-radiating insulating plate
JPH04103150A (en) Ic mounting board
JP5278371B2 (en) Manufacturing method of semiconductor device
JP2017168635A (en) Substrate for power module and manufacturing method of power module
JP2003318330A (en) Ceramic circuit substrate
EP3761351B1 (en) Insulated circuit board
JP2001298136A (en) Heat sink and wiring board with the heat sink
JPH1070212A (en) Substrate for power module
JP3049948B2 (en) Package manufacturing method
JP2002033555A (en) Multiple-piece ceramic substrate
JP2654868B2 (en) Ceramic substrate with copper circuit
JPH04287952A (en) Composite insulating board and semiconductor device using same
JP3463790B2 (en) Wiring board

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20031219

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20040323

A912 Removal of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20040423