CN100359674C - Module type semi-conductor device - Google Patents

Module type semi-conductor device Download PDF

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Publication number
CN100359674C
CN100359674C CNB991234111A CN99123411A CN100359674C CN 100359674 C CN100359674 C CN 100359674C CN B991234111 A CNB991234111 A CN B991234111A CN 99123411 A CN99123411 A CN 99123411A CN 100359674 C CN100359674 C CN 100359674C
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China
Prior art keywords
thickness
scolder
less
heat
module type
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Expired - Fee Related
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CNB991234111A
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Chinese (zh)
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CN1253377A (en
Inventor
田中�明
山本敦史
草野贵史
西村隆宣
荒木浩二
福吉宽
石渡裕
奥富功
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Toshiba Corp
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Toshiba Corp
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Publication of CN1253377A publication Critical patent/CN1253377A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
    • H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention prevents fatigue damages of a solder due to thermal cycling and to realize enhancement of the reliability of a module semiconductor device. This semiconductor device is provided with an insulating board formed by a method, wherein a first conductive layer is bonded on the surface on one side of the surfaces of an insulative ceramic layer and a second conductive layer is bonded on the other surface of the insulative ceramic layer, a semiconductor element is bonded on the first conductive layer and a heat conductor is base welded on the second conductive layer via a solder. In this case, a ratio tb/ts of a thickness tb of the base to a thickness ts of the solder is set to a ratio within the range of 6.7 or more to 80 or lower.

Description

Module type semi-conductor device
The present invention relates to module type semi-conductor device, it has the heat sink heat-conducting base that is fixed in that is used for cooling off, and has the laminated construction that provides scolder, second conductive layer, dielectric substrate, first conductive layer and semiconductor element on heat-conducting base.
In the semiconductor element field such as power switch component, the module type semi-conductor device that contains one or more semiconductor element in the packaging part is well-known.
Fig. 1 typically shows the schematic construction of conventional module type semi-conductor device.In this module type semi-conductor device, with respect to using first conductive layer 2 is connected to surface of dielectric ceramic layer 1 and second conductive layer 3 is connected to the dielectric substrate 4 that its another surperficial method is made, one or more semiconductor element 5 is connected on first conductive layer 2, and heat-conducting base 7 is connected on second conductive layer 3 by scolder 6.
Can heat-conducting base 7 be fixed to the heat sink (not shown) of making by identical Heat Conduction Material with bolt and so on.
Like this, in module type semi-conductor device, be terminated at semiconductor element 5 under the situation of external heat sink, the heat that produces in semiconductor element 5 courses of work is sent in the external heat sink by dielectric substrate 4 and heat-conducting base 7.
But in above-mentioned module type semi-conductor device, scolder 6 is connected to linear expansion coefficient with dielectric substrate 4 and is different from the heat-conducting base 7 with substrate 4.Therefore, scolder 6 just becomes the most responsive zone of damage in the temperature cycles.Actual inefficacy or defective great majority are that the fatigue by scolder 6 causes.
Specifically, in the temperature cycles that the temperature rise and fall that heating repeatedly after the unlatching of electric current in by the course of work/shutoff control and cooling cause are formed, each part of module type semi-conductor device expands repeatedly and shrinks.
If heat-conducting base 7 is become by for example copper, then there is 4 times difference in swell increment between dielectric ceramic layer in these elements 1 and the heat-conducting base 7 and the decrement herein.
If the expansion that difference is big like this occurs repeatedly with compression, then the scolder 6 between dielectric substrate 4 and the heat-conducting base 7 just fatigue damage may occur.As mentioned above, the fatigue damage of scolder 6 also causes inefficacy or defective, thereby reduces the reliability of device.
The purpose of this invention is to provide and a kind ofly can prevent scolder fatigue damage that temperature cycles causes and the module type semi-conductor device that improves reliability.
The present invention designs for module type semi-conductor device, and this device comprises dielectric ceramic layer; Be connected in first conductive layer on a surface of dielectric ceramic layer; Be connected in second conductive layer on another surface of dielectric ceramic layer; Be connected the semiconductor element on first conductive layer; And be connected heat-conducting base on second conductive layer by scolder.
Herein, the feature of first invention is the thickness t of heat-conducting base bThickness t to scolder sRatio t b/ t sIn the scope of 6.7-80.
As from as seen above-mentioned, according to the present invention, the thickness t of heat-conducting base bThickness t to scolder sRatio t b/ t sBe defined in the scope of 6.7-80.So preventing the scolder fatigue damage that temperature cycles causes and improving reliability just becomes possibility.
Herein, heat-conducting base can be made by copper (Cu), aluminium (Al) or MMC (metal matrix composite).In the case, except above-mentioned advantage, also might improve cooling effectiveness.
In addition, dielectric ceramic layer can be made by aluminium nitride, aluminium oxide or silicon nitride.In the case, owing to used the dielectric ceramic layer of insulation property and excellent strength, except above-mentioned advantage, might further improve reliability.
And scolder can mainly be made up of tin, lead or silver.In the case, owing to adopted the scolder of mechanical strength, corrosion resistance and heat conductivility excellence, except above-mentioned advantage, might further improve reliability.
And in the module type semi-conductor device of design, the feature of second invention is that the correlation between the thickness of the thickness of heat-conducting base and scolder satisfies in following relationship (1)-(5):
(1) is not less than 2mm and during less than 4mm, the thickness of scolder is not less than 50 μ m when the thickness of heat-conducting base.
(2) be not less than 4mm and during less than 6mm, the thickness of scolder is not less than 100 μ m when the thickness of heat-conducting base.
(3) be not less than 6mm and during less than 8mm, the thickness of scolder is not less than 150 μ m when the thickness of heat-conducting base.
(4) be not less than 8mm and during less than 9mm, the thickness of scolder is not less than 200 μ m when the thickness of heat-conducting base.
(5) when the thickness of heat-conducting base is not less than 9mm, the thickness of scolder is not less than 250 μ m.
Because the combinations thereof of heat-conducting base thickness and solder thickness has been stipulated in second invention rightly, so prevent from the scolder fatigue damage that temperature cycles causes and improve reliability just to become possibility.
Fig. 1 typically shows the schematic construction of conventional module type semi-conductor device;
Fig. 2 typically shows the schematic construction according to the module type semi-conductor device of first embodiment of the invention;
Fig. 3 shows base thickness t among first embodiment bThickness t to scolder sRatio; And
Fig. 4 shows for the base thickness t that is coated in according to each solder thickness on the module type semi-conductor device of fifth embodiment of the invention b
Embodiments of the invention are described with reference to the accompanying drawings.
[first embodiment]
Fig. 2 typically shows the schematic construction according to the module type semi-conductor device of first embodiment of the invention.Represent element same as shown in Figure 1 with the reference number identical, no longer be described in greater detail herein with Fig. 1.This is applicable to other embodiment, does not carry out the description of repetition.
That is in each of first to the 5th embodiment of the present invention, the plastic strain that produces at scolder 6a place is used as under the situation of performance function, thickness (hereinafter referred to as " the solder thickness ") t of regulation scolder 6a sThickness (hereinafter referred to as " base thickness ") t with heat-conducting base 7a bConditions such as combination, make it not cause fatigue failure.
In other words, module type semi-conductor device according to the present invention has a kind of like this structure, the thickness of scolder 6a not only wherein, and also have the thickness of heat-conducting base 7a, all be in order to suppress the plastic strain of scolder 6a place generation.Specifically, (for example open No.8-195471 of Japanese patent application KOKAI) can expect that stress relaxation is proportional to the thickness of scolder 6 in the system of the thickness that only increases scolder 6, but the decline of the thermal conductivity of scolder 6, thereby heat accumulation.This heat accumulation can cause the strain of scolder 6 undoubtedly.
Therefore, the inventor considers the strain that alleviates scolder 6 and manages attenuate heat-conducting base 7, the correlation between the thickness of proposed this notion and the final optimization pass thickness of scolder 6 and heat-conducting base 7, thus obtained the present invention.
Specifically, in first to the 5th embodiment, as shown in Figure 2, provide scolder 6a to replace scolder 6, and provide heat-conducting base 7a to replace heat-conducting base 7 with thickness of optimizing with thickness of optimizing.
First embodiment is described below.Fig. 3 shows the base thickness t among first embodiment bTo the scolder thickness t sRatio (t b/ t s).Specifically, Fig. 3 relates to the plastic strain of scolder, and shows and utilize analysis of finite element method to obtain the base thickness t bTo the scolder thickness t sRatio t b/ t sThe result of dependency characteristic.
In Fig. 3, the limiting value A of scolder plastic strain shows the fatigue limit that testing fatigue that each solder sample is carried out obtains.That is when the plastic strain of scolder was not more than limiting value A, fatigue failure did not appear in scolder 6a.In Fig. 3, be not more than the ratio t of the base thickness of limiting value A to solder thickness b/ t s(6.7≤(t in the scope of 6.7-80 b/ t s)≤80).
Therefore, with structure shown in Figure 2, by means of with the base thickness t bTo the scolder thickness t sRatio t b/ t sBe set in the scope of 6.7-80, prevent that scolder 6a from fatigue damage taking place and improve reliability owing to temperature cycles is possible.
[second embodiment]
Second embodiment is the special case of first embodiment.In the base thickness t bTo the scolder thickness t sRatio t b/ t sBe set under the situation in the scope of 6.7-80, the material of heat-conducting base 7a is defined as copper, aluminium or MMC.Herein, the condition of heat-conducting base 7 is bases 7 for conductor and considers that cooling effectiveness has excellent thermal conductivity, and adopts and satisfy copper, aluminium or the MMC of these conditions material as base 7.
Use said structure, except the advantage of first embodiment, second embodiment can advantageously improve cooling effectiveness.Particularly from the viewpoint of the thermal fatigue that reduces scolder 6a, because the difference of base 7 that MMC makes and the thermal coefficient of expansion between the dielectric ceramic layer 1 is little, so MMC is preferably.
[the 3rd embodiment]
The 3rd embodiment is the special case of first embodiment.In the base thickness t bTo the scolder thickness t sRatio t b/ t sBe set under the situation in the scope of 6.7-80, the material of dielectric ceramic layer 1 is defined as aluminium nitride (AlN), aluminium oxide (Al 2O 3) or silicon nitride (SiN).
Herein, dielectric ceramic layer 1 is a center substrate, and semiconductor element 5 connects thereon by first conductive layer 2.The condition of dielectric ceramic layer 1 is the intensity that has excellent insulation characterisitic and consider the excellence of mechanical strength.The aluminium nitride, aluminium oxide or the silicon nitride that satisfy these conditions are defined as its material.
With the said structure of the dielectric ceramic layer 1 that has wherein adopted insulation characterisitic and excellent strength, except the advantage of first embodiment, the 3rd embodiment can further improve the reliability of entire device.
[the 4th embodiment]
The 4th embodiment is the special case of first embodiment.In the base thickness t bTo the scolder thickness t sRatio t b/ t sBe set under the situation in the scope of 6.7-80, the key component of scolder 6a is defined as tin (Sn), plumbous (Pb) or silver (Ag).
Herein, scolder 6a is connected to heat-conducting base 7a with the dielectric ceramic layer 1 that is connected with conductive layer on it, and is required to have excellent mechanical strength, corrosion resistance and thermal conductivity.The tin, lead or the silver that satisfy these requirements mainly are included among the scolder 6a.
With the said structure of the scolder that has wherein adopted mechanical strength, corrosion resistance and thermal conductivity excellence, except the advantage of first embodiment, the 4th embodiment can further improve the reliability of entire device.
[the 5th embodiment]
Fig. 4 shows each solder thickness t that is used to be coated in according on the module type semi-conductor device of fifth embodiment of the invention sThe base thickness t bSpecifically, Fig. 4 relates to the plastic strain of scolder, and shows the result of each solder thickness acquisition base thickness to the pauper character of scolder plastic strain.
It is to be noted, as top pointed out, limiting value A shown in Figure 4 represents that the limit before the fatigue failure does not take place scolder 6a.
In Fig. 4, be not more than the base thickness t of limiting value A bDepend on solder thickness t sThe scolder plastic strain is not more than the base thickness t of limiting value A bWith solder thickness t sThe number of combination be following 5 kinds:
(1) when the thickness t of base bBe not less than 2mm and during, the thickness t of scolder less than 4mm sBe not less than 50 μ m (2mm≤t b＜4mm and 50 μ m≤t s).
(2) when the thickness t of base bBe not less than 4mm and during, the thickness t of scolder less than 6mm sBe not less than 100 μ m (4mm≤t b＜6mm and 100 μ m≤t s).
(3) when the thickness t of base bBe not less than 6mm and during, the thickness t of scolder less than 8mm sBe not less than 150 μ m (6mm≤t b＜8mm and 150 μ m≤t s).
(4) when the thickness t of base bBe not less than 8mm and during, the thickness t of scolder less than 9mm sBe not less than 200 μ m (8mm≤t b＜9mm and 200 μ m≤t s).
(5) when the thickness t of base bWhen being not less than 9mm, the thickness t of scolder sBe not less than 250 μ m (9mm≤t bAnd 250 μ m≤t s).
So, with structure shown in Figure 2, by means of setting above-mentioned 5 kinds of base thickness t bWith solder thickness t sCombination in a kind of, thereby prevent that fatigue damage to take place and improve reliability be possible to scolder 6a owing to temperature cycles.
In the 5th embodiment, the situation of the material of regulation heat-conducting base 7a, dielectric ceramic layer 1 and scolder 6a not is described.But the present invention should not be confined to this.As described in second to the 4th embodiment, even stipulated the material of heat-conducting base 7a, dielectric ceramic layer 1 and scolder 6a, except the advantage of the 5th embodiment, the advantage that obtains second to the 4th embodiment also is possible.

Claims (13)

1. module type semi-conductor device, it comprises:
Dielectric ceramic layer (1);
Be connected in first conductive layer (2) on a surface of dielectric ceramic layer;
Be connected in second conductive layer (3) on another surface of dielectric ceramic layer;
Be connected the semiconductor element (5) on first conductive layer; And
Be connected heat-conducting base (7a) on second conductive layer by scolder (6a),
Wherein, the thickness t of heat-conducting base bThickness t to scolder sRatio t b/ t sIn the scope of 6.7-80.
2. according to the module type semi-conductor device of claim 1, heat-conducting base wherein is made of copper.
3. according to the module type semi-conductor device of claim 1, heat-conducting base wherein is made of aluminum.
4. according to the module type semi-conductor device of claim 1, heat-conducting base is wherein made by metal matrix composite.
5. according to the module type semi-conductor device of claim 1, dielectric ceramic layer is wherein made by aluminium nitride.
6. according to the module type semi-conductor device of claim 1, dielectric ceramic layer is wherein made by aluminium oxide.
7. according to the module type semi-conductor device of claim 1, dielectric ceramic layer is wherein made by silicon nitride.
8. according to the module type semi-conductor device of claim 1, scolder wherein mainly is made up of tin, lead or silver.
9. according to the module type semi-conductor device of claim 1, wherein
The thickness of heat-conducting base is not less than 2mm and less than 4mm; And
The thickness of scolder is not less than 50 μ m.
10. according to the module type semi-conductor device of claim 1, the thickness of heat-conducting base wherein is not less than 4mm and less than 6mm; And the thickness of this scolder is not less than 100 μ m.
11. according to the module type semi-conductor device of claim 1, the thickness of heat-conducting base wherein is not less than 6mm and less than 8mm; And the thickness of this scolder is not less than 150 μ m.
12. according to the module type semi-conductor device of claim 1, the thickness of heat-conducting base wherein is not less than 8mm and less than 9mm; And the thickness of this scolder is not less than 200 μ m.
13. according to the module type semi-conductor device of claim 1, the thickness of heat-conducting base wherein is not less than 9mm; And the thickness of this scolder is not less than 250 μ m.
CNB991234111A 1998-11-04 1999-11-04 Module type semi-conductor device Expired - Fee Related CN100359674C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10313399A JP2000138333A (en) 1998-11-04 1998-11-04 Module semiconductor device
JP313399/1998 1998-11-04

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CN1253377A CN1253377A (en) 2000-05-17
CN100359674C true CN100359674C (en) 2008-01-02

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KR (1) KR100354462B1 (en)
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DE (1) DE19952966A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT411126B (en) * 2001-04-06 2003-09-25 Siemens Ag Oesterreich SEMICONDUCTOR MODULE
JP4666337B2 (en) * 2001-05-24 2011-04-06 フライズ メタルズ インコーポレイテッド Thermal interface material and heat sink placement
NL1027632C2 (en) * 2004-12-01 2006-06-02 Electrische App Nfabriek Capax Support for electrical components with insulated heat sink.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982844A (en) * 1995-09-20 1997-03-28 Mitsubishi Electric Corp Semiconductor module board and manufacture thereof
JPH10242330A (en) * 1997-02-21 1998-09-11 Dowa Mining Co Ltd Substrate for power module and manufacture thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6057656A (en) * 1983-09-09 1985-04-03 Hitachi Ltd Power module
JPH04162756A (en) * 1990-10-26 1992-06-08 Toshiba Corp Semiconductor module
JPH04287952A (en) * 1991-02-18 1992-10-13 Mitsubishi Electric Corp Composite insulating board and semiconductor device using same
JP2808952B2 (en) * 1991-11-27 1998-10-08 日立電線株式会社 Substrate for mounting semiconductor elements
JPH06334286A (en) * 1993-05-26 1994-12-02 Denki Kagaku Kogyo Kk Circuit board
JPH0883864A (en) * 1994-09-13 1996-03-26 Meidensha Corp Power semiconductor device
KR100245971B1 (en) * 1995-11-30 2000-03-02 포만 제프리 엘 Heat sink assembly using adhesion promoting layer for bonding polymeric adhesive to metal and the method of making the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982844A (en) * 1995-09-20 1997-03-28 Mitsubishi Electric Corp Semiconductor module board and manufacture thereof
JPH10242330A (en) * 1997-02-21 1998-09-11 Dowa Mining Co Ltd Substrate for power module and manufacture thereof

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KR20000035180A (en) 2000-06-26
CN1253377A (en) 2000-05-17
DE19952966A1 (en) 2000-05-11
JP2000138333A (en) 2000-05-16
KR100354462B1 (en) 2002-09-30

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