JP2003318330A - Ceramic circuit substrate - Google Patents
Ceramic circuit substrateInfo
- Publication number
- JP2003318330A JP2003318330A JP2002147926A JP2002147926A JP2003318330A JP 2003318330 A JP2003318330 A JP 2003318330A JP 2002147926 A JP2002147926 A JP 2002147926A JP 2002147926 A JP2002147926 A JP 2002147926A JP 2003318330 A JP2003318330 A JP 2003318330A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- metal
- ceramic
- brazing material
- active metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Ceramic Products (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、セラミック基板に
銅または銅合金から成る金属回路板を活性金属ろう材に
よって接合して成るセラミック回路基板に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board formed by joining a metal circuit board made of copper or a copper alloy to a ceramic board with an active metal brazing material.
【０００２】[0002]
【従来の技術】近年、パワーモジュール用基板やスイッ
チングモジュール用基板等の回路基板として、セラミッ
ク基板上に活性金属ろう材を介して銅等から成る金属回
路板を接合して成るセラミック回路基板が用いられてい
る。2. Description of the Related Art In recent years, as a circuit board such as a power module board or a switching module board, a ceramic circuit board formed by joining a metal circuit board made of copper or the like onto a ceramic board via an active metal brazing material has been used. Has been.
【０００３】このようなセラミック回路基板は、具体的
には以下の方法によって製作される。Such a ceramic circuit board is specifically manufactured by the following method.
【０００４】まず、銀−銅合金にチタン・ジルコニウム
・ハフニウムおよびこれらの水素化物の少なくとも１種
を添加した活性金属粉末に有機溶剤・溶媒を添加混合し
て成る活性金属ろう材ペーストを準備する。First, an active metal brazing material paste prepared by adding and mixing an organic solvent and a solvent to an active metal powder obtained by adding at least one of titanium, zirconium, hafnium and hydrides to a silver-copper alloy is prepared.
【０００５】次に、例えばセラミック基板が酸化アルミ
ニウム質焼結体から成る場合、酸化アルミニウム・酸化
珪素・酸化マグネシウム・酸化カルシウム等の原料粉末
に適当な有機バインダ・可塑剤・溶剤等を添加混合して
泥漿状と成すとともにこれを従来周知のドクターブレー
ド法やカレンダーロール法等のテープ成形技術を採用し
て複数のセラミックグリーンシートを得た後、これらを
所定寸法に形成し、次にセラミックグリーンシートを必
要に応じて上下に積層するとともに還元雰囲気中にて約
1600℃の温度で焼成し、セラミックグリーンシートを焼
結一体化させてセラミック基板を形成する。Next, for example, when the ceramic substrate is made of an aluminum oxide sintered body, an appropriate organic binder, plasticizer, solvent, etc. are added to and mixed with raw material powders of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide and the like. It is made into a sludge shape and it is formed into a plurality of ceramic green sheets by adopting the conventionally well-known tape molding technology such as doctor blade method and calendar roll method, then these are formed into a predetermined size, and then the ceramic green sheet is formed. Can be stacked on top of each other as needed and about in a reducing atmosphere.
It is fired at a temperature of 1600 ° C., and the ceramic green sheets are sintered and integrated to form a ceramic substrate.
【０００６】次に、セラミック基板に活性金属ろう材ペ
ーストを所定のパターンに印刷するとともに乾燥し、し
かる後、活性金属ろう材ペースト上に銅または銅合金か
ら成る金属回路板を載置する。Next, an active metal brazing material paste is printed on a ceramic substrate in a predetermined pattern and dried, and then a metal circuit board made of copper or copper alloy is placed on the active metal brazing material paste.
【０００７】そして最後に、セラミック基板と金属回路
板との間に配されている活性金属ろう材ペーストを非酸
化性雰囲気中にて約900℃の温度に加熱して溶融させ、
このろう材でセラミック基板と金属回路板とを接合する
ことによって製作される。Finally, the active metal brazing material paste arranged between the ceramic substrate and the metal circuit board is heated to a temperature of about 900 ° C. in a non-oxidizing atmosphere to be melted,
It is manufactured by joining a ceramic substrate and a metal circuit board with this brazing material.
【０００８】このようにして製作されたセラミック回路
基板は、これにＩＧＢＴ（Insulated Gate Bipolar Tra
nsistor）やＭＯＳ−ＦＥＴ（Metal Oxide Semiconduct
or-Field Effect Transistor）等の半導体素子を半田等
の接着材を介して実装した後、外部入出力用の端子が一
体成型された樹脂ケース内に装着され、半導体モジュー
ルとなる。そして、この半導体モジュールは、ロボット
などの産業機器から電車の駆動部や電気自動車などの幅
広い用途に使用され、厳しい環境下での高い信頼性が要
求されている。The ceramic circuit board manufactured in this manner has an IGBT (Insulated Gate Bipolar Transistor)
nsistor) and MOS-FET (Metal Oxide Semiconduct)
After mounting a semiconductor element such as an or-Field Effect Transistor) via an adhesive such as solder, a terminal for external input / output is mounted in an integrally molded resin case to form a semiconductor module. This semiconductor module is used in a wide range of applications from industrial equipment such as robots to train drive units and electric vehicles, and is required to have high reliability under severe environments.
【０００９】しかしながら、この端子一体成型樹脂ケー
スの製作には、成型用金型が必要であり製造コストが高
いことから、半導体モジュールの製造コストが増加する
難点があった。また、端子一体成型樹脂ケースにセラミ
ック回路基板を組み立てた後、端子部とセラミック回路
基板の金属回路板とをボンディングワイヤなどで電気的
に接続する必要があった。However, in order to manufacture this terminal-integrally molded resin case, since a molding die is required and the manufacturing cost is high, there is a problem that the manufacturing cost of the semiconductor module increases. Further, after assembling the ceramic circuit board in the terminal-integrated molded resin case, it is necessary to electrically connect the terminal portion and the metal circuit board of the ceramic circuit board with a bonding wire or the like.
【００１０】このため、端子を金属回路板に半田や超音
波接合法等で直接接合したセラミック回路基板や、金属
回路板の一部を端子として延出させた端子一体型セラミ
ック回路基板が採用されるようになってきている。Therefore, a ceramic circuit board in which terminals are directly bonded to a metal circuit board by soldering or ultrasonic bonding, or a terminal-integrated ceramic circuit board in which a part of the metal circuit board is extended as a terminal is adopted. Is becoming more common.
【００１１】しかしながら、半田を用いて端子を金属回
路板に接合する場合には、その後の半導体素子などの電
子部品を実装するときの加熱温度によって接合がはずれ
ないように、その加熱温度より融点が高い高温半田が必
要であることから、この時に高温に加熱されることによ
る熱サイクルによって、金属回路板とセラミック基板と
の熱膨張差によるクラックが発生したり、250℃程度の
耐熱しかないエポキシ系のソルダーレジストが使用でき
ないという問題点を有していた。However, when the terminals are joined to the metal circuit board by using solder, the melting point is higher than the heating temperature so that the joining does not come off due to the heating temperature when mounting electronic parts such as semiconductor elements thereafter. Since high-temperature solder is required, the thermal cycle caused by heating to a high temperature at this time may cause cracks due to the difference in thermal expansion between the metal circuit board and the ceramic substrate, or an epoxy resin with a heat resistance of about 250 ° C. However, there is a problem that the solder resist of No. 1 cannot be used.
【００１２】また、半導体素子が実装され半導体モジュ
ールとして使用されるときに発生する熱・振動により、
端子と金属回路板とを接合する半田内部にクラックが発
生しやすく、信頼性が低下するという問題点を有してい
た。Further, due to heat and vibration generated when a semiconductor element is mounted and used as a semiconductor module,
There is a problem that cracks are likely to occur inside the solder that joins the terminal and the metal circuit board, resulting in a decrease in reliability.
【００１３】さらに、超音波接合による端子接合では、
例えば、金属回路板に接触させた端子接合部の表面には
約10〜50ＭＰａの圧力で超音波発振ホーンが押圧される
ため、この高圧力が端子接合部分直下のセラミック基板
に金属回路板と接合ろう材とを介して加わる、あるい
は、超音波振動により発生する約500℃以上の熱が瞬間
的に端子接合部分の直下のセラミック基板に伝搬するこ
とにより、セラミック基板に微小な部分的クラックを生
じさせることがあり、その場合、セラミック回路基板の
機械的強度が低下し、信頼性が著しく低下してしまうと
いう問題点を有していた。Further, in the terminal joining by ultrasonic joining,
For example, since the ultrasonic oscillating horn is pressed by the pressure of about 10 to 50 MPa on the surface of the terminal joint part that is in contact with the metal circuit board, this high pressure causes the ceramic circuit board immediately below the terminal joint part to bond with the metal circuit board. Heat of about 500 ° C or higher that is applied through the brazing material or generated by ultrasonic vibration instantaneously propagates to the ceramic substrate immediately below the terminal joints, causing minute partial cracks in the ceramic substrate. In that case, there is a problem that the mechanical strength of the ceramic circuit board is lowered and the reliability is significantly lowered.
【００１４】そのため、構造がよりシンプルで、実装工
数が少なく信頼性の高い、金属回路板の一部を端子部と
して延出させた端子一体型セラミック回路基板が採用さ
れるようになってきている。また、金属回路板上に半導
体素子等の電子部品を搭載し、アルミワイヤで金属回路
板と接続した後、端子部をセラミック回路基板に対して
略垂直に折り曲げて樹脂ケースに実装する場合もある。
この金属回路板は、圧延加工法や打ち抜き加工法等の従
来周知の金属加工法を施すことによって、所望の回路配
線パターン形状に製作される。または、セラミック基板
と略同形状の金属板をろう付けした後にエッチングによ
り不要な金属部分を除去することにより回路配線パター
ンの形成が行なわれる。なお、この場合、図４に従来の
セラミック回路基板の断面図で示すように、セラミック
基板11と活性金属ろう材13との接合端縁ａと、金属回路
板12と活性金属ろう材13との接合端縁ｂとがほぼ垂直に
重なる位置、あるいは図示はしないがセラミック回路基
板を平面視した時にほぼ同じ位置となっている。For this reason, a ceramic circuit board integrated with a terminal, which has a simple structure, a small number of mounting steps, and a high reliability, and which is formed by extending a part of a metal circuit board as a terminal portion, has been adopted. . In some cases, an electronic component such as a semiconductor element is mounted on a metal circuit board, connected to the metal circuit board by an aluminum wire, and then the terminal portion is bent substantially perpendicular to the ceramic circuit board to be mounted on a resin case. .
This metal circuit board is manufactured into a desired circuit wiring pattern shape by performing a conventionally known metal processing method such as a rolling method or a punching method. Alternatively, a circuit wiring pattern is formed by brazing a metal plate having substantially the same shape as the ceramic substrate and then removing unnecessary metal portions by etching. In this case, as shown in the cross-sectional view of the conventional ceramic circuit board in FIG. 4, the joining edge a between the ceramic substrate 11 and the active metal brazing material 13, the metal circuit board 12 and the active metal brazing material 13, It is located at a position where it is substantially vertically overlapped with the joint edge b, or at a substantially same position when the ceramic circuit board is viewed in plan view, although not shown.
【００１５】また、小型化・薄型化・配線の高密度化の
要求が高まっている中で、セラミック基板11と略同形状
の金属回路板12をろう付けした後に、エッチングにより
回路以外の不要な部分を除去して回路配線パターンの形
成を行なう場合、金属回路板12の厚みを薄くすることに
より、エッチングにより不要な金属部分を除去すること
により形成される端面のテーパを小さくし、すなわち端
面の傾斜を大きくして金属回路板12間の絶縁間隔を極力
狭くし、金属回路板12の実装領域を極力多く確保するこ
とが検討されている。なお、金属回路板12を薄くするこ
とは、セラミック回路基板の反りバランスから裏側の放
熱板も薄くすることになる。これにより、セラミック回
路基板全体をより小型化・薄型化・配線の高密度化が可
能になる。In addition, as demands for downsizing, thinning, and high-density wiring are increasing, after the metal circuit board 12 having substantially the same shape as the ceramic substrate 11 is brazed, unnecessary parts other than circuits are etched by etching. When the circuit wiring pattern is formed by removing the portion, the thickness of the metal circuit board 12 is reduced to reduce the taper of the end face formed by removing the unnecessary metal portion by etching, that is, It has been studied to increase the inclination to make the insulation distance between the metal circuit boards 12 as narrow as possible and to secure the mounting area of the metal circuit board 12 as much as possible. Note that making the metal circuit board 12 thin also makes the heat sink plate on the back side thin due to the warpage balance of the ceramic circuit board. As a result, the entire ceramic circuit board can be made smaller, thinner, and the wiring density can be increased.
【００１６】[0016]
【発明が解決しようとする課題】しかしながら、上記の
ようにセラミック基板11と活性金属ろう材13との接合端
縁ａと、金属回路板12と活性金属ろう材13との接合端縁
ｂとがほぼ垂直に重なる位置に形成されている場合、セ
ラミック回路基板に繰り返し熱衝撃が加えられた際に、
セラミック基板11と活性金属ろう材13との接合端縁ａ
に、セラミック基板11と活性金属ろう材13との間に生じ
る両者の熱膨張差により発生する熱応力と、金属回路板
12と活性金属ろう材13との間に生じる両者の熱膨張差に
より発生する熱応力とが重畳して印加されることとな
り、セラミック基板11と活性金属ろう材13の接合端縁ａ
にクラックが発生しやすくなり、特に金属回路板12の厚
みが厚い程、その現象はより顕著となり、その結果、接
合強度や熱伝導性、電気絶縁性が低下してしまい、信頼
性の高い部品として使用することができないという問題
点を有していた。However, as described above, the joint edge a between the ceramic substrate 11 and the active metal brazing material 13 and the joint edge b between the metal circuit board 12 and the active metal brazing material 13 are formed. When the ceramic circuit board is formed in a position where it overlaps almost vertically, when the ceramic circuit board is repeatedly subjected to thermal shock,
Bonding edge a between the ceramic substrate 11 and the active metal brazing material 13
In addition, the thermal stress generated by the difference in thermal expansion between the ceramic substrate 11 and the active metal brazing material 13 and the metal circuit board
The thermal stress generated by the difference in thermal expansion between the active metal brazing material 13 and the active metal brazing material 13 is superimposed and applied, and the joining edge a of the ceramic substrate 11 and the active metal brazing material 13 is applied.
Cracks are more likely to occur, especially as the thickness of the metal circuit board 12 is thicker, the phenomenon becomes more prominent, and as a result, the bonding strength, thermal conductivity, and electrical insulation are reduced, resulting in highly reliable components. It has a problem that it cannot be used as.
【００１７】また、小型化・薄型化・配線の高密度化を
実現するために金属回路板12の厚みを薄くすると、金属
回路板12と活性金属ろう材13との接合端縁から外側の金
属回路板は、金属材料単独で存在しているので強度が低
下し変形しやすく、破損が起こりやすい。特に、接合端
から外側が端子部とされ、セラミック回路基板に対して
略垂直に折り曲げて利用する場合、強度が弱いために端
子部が曲げ加工時に破損したりする。さらに、端子部と
ソケットとの間に、樹脂ケースに実装接続できる程度の
位置ずれがある場合においても、変形が大きいと端子部
とソケットとの間の接触面積は小さくなり、端子部とソ
ケットとの嵌合力が弱くて外れやすくなるとともに端子
部とソケット間の接触抵抗が大きくなるなど機械的・電
気的接続信頼性が低下して、搭載される半導体素子等の
電子部品を安定して作動させることができないという問
題が発生する。このような問題は、セラミック回路基板
に複数の端子部が形成される場合には、特に顕著になる
傾向がある。一方、接合端から外側の金属回路板の十分
な強度低下を防ぐために、金属回路板の厚みを厚くする
と、回路配線パターンの形成を行なった場合、エッチン
グにより不要な金属部分を除去することによって形成さ
れる端面のテーパが大きくなって、すなわち端面の傾斜
が小さくなってパターン間の絶縁間隔が大きくなり、そ
の結果、金属回路板の実装領域が少なくなり、セラミッ
ク回路基板全体を大きくしなければならない、あるいは
セラミック回路基板の反りバランスからセラミック回路
基板の裏側に接合される放熱板の厚みも厚くしなければ
ならないという問題点を有していた。Further, if the thickness of the metal circuit board 12 is reduced in order to realize the miniaturization / thinning / wiring density increase, the metal outside the joint edge between the metal circuit board 12 and the active metal brazing filler metal 13 is formed. Since the circuit board is made of the metal material alone, the strength thereof is lowered, the circuit board is easily deformed, and the circuit board is easily damaged. In particular, when the terminal portion is on the outside from the joining end and the terminal portion is bent substantially perpendicularly to the ceramic circuit board for use, the terminal portion may be damaged during bending due to its weak strength. Further, even if there is a positional displacement between the terminal portion and the socket that can be mounted and connected to the resin case, if the deformation is large, the contact area between the terminal portion and the socket becomes small, and the terminal portion and the socket The mechanical and electrical connection reliability is reduced due to the weak fitting force of the connector and easy removal, and the increased contact resistance between the terminal and socket, enabling stable operation of electronic components such as mounted semiconductor elements. There is a problem that you can not. Such a problem tends to be particularly remarkable when a plurality of terminal portions are formed on the ceramic circuit board. On the other hand, if the thickness of the metal circuit board is increased in order to prevent a sufficient reduction in strength of the metal circuit board outside from the joining end, when the circuit wiring pattern is formed, it is formed by removing unnecessary metal parts by etching. The taper of the end face becomes large, that is, the inclination of the end face becomes small, and the insulation distance between the patterns becomes large, so that the mounting area of the metal circuit board becomes small and the whole ceramic circuit board must be made large. Alternatively, there is a problem in that the thickness of the heat dissipation plate joined to the back side of the ceramic circuit board must be increased due to the warpage balance of the ceramic circuit board.
【００１８】本発明は上記問題点に鑑みて完成されたも
ので、その目的は端子一体型セラミック回路基板におい
て、接合後の繰り返し加えられる熱衝撃においても、セ
ラミック基板と活性金属ろう材との接合端縁のセラミッ
ク基板に熱膨張差により発生する熱応力が集中すること
が無く、その結果、クラックが発生しない、かつ小型化
・薄型化・配線の高密度化のために金属回路板の厚みを
薄くしても、金属回路板と活性金属ろう材との接合端か
ら外側の金属回路板の強度低下により変形や破損が発生
しにくい、機械的・電気的接続信頼性の高いセラミック
回路基板を提供することにある。The present invention has been completed in view of the above problems, and an object thereof is to bond a ceramic circuit board and an active metal brazing material to a terminal-integrated ceramic circuit board even under repeated thermal shocks after bonding. The thermal stress generated by the difference in thermal expansion does not concentrate on the ceramic substrate at the edge, and as a result, cracks do not occur, and the thickness of the metal circuit board is reduced for downsizing, thinning, and high-density wiring. Provides a ceramic circuit board with high mechanical and electrical connection reliability that is resistant to deformation or damage due to the strength reduction of the outer metal circuit board from the joint end between the metal circuit board and the active metal brazing material even if it is thin To do.
【００１９】[0019]
【課題を解決するための手段】本発明のセラミック回路
基板は、セラミック基板の表面に活性金属ろう材を介し
て銅または銅合金から成る金属回路板が接合されてお
り、金属回路板の内側に活性金属ろう材との接合端が位
置する部位において、活性金属ろう材とセラミック基板
との接合端縁から金属回路板の内側にかけて溝状に、金
属回路板と活性金属ろう材との非接合領域を設けたこと
を特徴とするものである。In the ceramic circuit board of the present invention, a metal circuit board made of copper or a copper alloy is bonded to the surface of the ceramic board through an active metal brazing material, and the inside of the metal circuit board is provided. A non-bonding region between the metal circuit board and the active metal brazing material in a groove shape from the bonding edge between the active metal brazing material and the ceramic substrate to the inside of the metal circuit board at the position where the bonding end with the active metal brazing material is located. Is provided.
【００２０】また、本発明のセラミック回路基板は、上
記構成において、非接合領域から外側の厚みに対して内
側の厚みが薄いことを特徴とするものである。Further, the ceramic circuit board of the present invention is characterized in that, in the above structure, the inner thickness is thinner than the outer thickness from the non-bonding region.
【００２１】さらに、本発明のセラミック回路基板は、
上記構成において、金属回路板の非接合領域から外側が
端子部とされていることを特徴とするものである。Further, the ceramic circuit board of the present invention is
In the above configuration, the outside of the non-bonded region of the metal circuit board is a terminal portion.
【００２２】本発明のセラミック回路基板によれば、金
属回路板の内側に活性金属ろう材との接合端が位置する
部位において、活性金属ろう材とセラミック基板との接
合端縁から金属回路板の内側にかけて溝状に、金属回路
板と活性金属ろう材との非接合領域を設けたことから、
金属回路板と活性金属ろう材との接合端縁およびセラミ
ック基板と活性金属ろう材との接合端縁が、セラミック
回路基板を平面視したときに離れた位置に形成されるこ
とになり、セラミック回路基板に繰り返し熱衝撃が加え
られた際に、セラミック基板と活性金属ろう材との接合
端縁に、セラミック基板と活性金属ろう材との間に生じ
る両者の熱膨張差により発生する熱応力と、金属回路板
と活性金属ろう材との間に生じる両者の熱膨張差により
発生する熱応力とが重畳して印加されることはなく、そ
の結果、セラミック基板と活性金属ろう材との接合端縁
にクラックが発生して接合強度や熱伝導性・電気絶縁性
が低下してしまうことはない。According to the ceramic circuit board of the present invention, in the portion where the joint end of the active metal brazing material is located inside the metal circuit board, the metal circuit board is separated from the joint edge of the active metal brazing material and the ceramic substrate. Since the non-bonding area between the metal circuit board and the active metal brazing material is provided in the groove shape toward the inside,
The joining edge between the metal circuit board and the active metal brazing material and the joining edge between the ceramic substrate and the active metal brazing material are formed at positions separated from each other when the ceramic circuit board is viewed in a plan view. When a thermal shock is repeatedly applied to the substrate, the thermal stress generated by the difference in thermal expansion between the ceramic substrate and the active metal brazing material at the joining edge between the ceramic substrate and the active metal brazing material, The thermal stress generated by the difference in thermal expansion between the metal circuit board and the active metal brazing material is not applied in a superimposed manner, and as a result, the joining edge between the ceramic substrate and the active metal brazing material is applied. There is no possibility that cracks will occur in the joint and the joint strength, thermal conductivity and electrical insulation will be reduced.
【００２３】また、本発明のセラミック回路基板は、上
記構成において、非接合領域の外側の金属回路板の厚み
に対して内側の金属回路板の厚みを薄くしたことから、
エッチングにより回路以外の不要な部分を除去して回路
配線パターンの形成を行なった場合、不要な部分を除去
することにより形成される端面のテーパが小さくなり、
その結果、金属回路板間の絶縁間隔を狭く、かつ金属回
路板の実装領域を多くすることができる。さらに、金属
回路板の厚みを薄くすることにより、セラミック回路基
板の反りバランスから裏側に接合される放熱板の厚みも
薄くすることが可能となり、セラミック回路基板の小型
化・薄型化・配線の高密度化が可能になる。Further, in the ceramic circuit board according to the present invention, in the above structure, the thickness of the inner metal circuit board is smaller than the thickness of the outer metal circuit board in the non-bonding region.
When the circuit wiring pattern is formed by removing unnecessary parts other than the circuit by etching, the taper of the end face formed by removing the unnecessary parts becomes small,
As a result, it is possible to narrow the insulation distance between the metal circuit boards and increase the mounting area of the metal circuit boards. Furthermore, by reducing the thickness of the metal circuit board, it is possible to reduce the thickness of the heat dissipation plate that is bonded to the back side due to the warpage balance of the ceramic circuit board. Densification is possible.
【００２４】さらに、本発明のセラミック回路基板は、
上記構成において、金属回路板の非接合領域から外側が
端子部とされているので、従来のように端子一体成型樹
脂ケースが不要になるだけでなく、端子部とセラミック
回路基板とをボンディングワイヤなどで接続する必要も
なく、また、端子を金属回路板に半田や超音波接合法等
で接合する必要もないので、製作工数が少なく経済的な
セラミック回路基板とすることができる。Further, the ceramic circuit board of the present invention is
In the above structure, since the outside of the non-bonded area of the metal circuit board is the terminal portion, not only the terminal integrally molded resin case becomes unnecessary as in the conventional case, but also the terminal portion and the ceramic circuit board are bonded to each other by a bonding wire or the like. Since it is not necessary to connect the terminals to the metal circuit board by soldering or ultrasonic bonding, it is possible to obtain an economical ceramic circuit board with a small number of manufacturing steps.
【００２５】[0025]
【発明の実施の形態】次に、本発明のセラミック回路基
板を添付の図面に基づいて詳細に説明する。図１は、本
発明のセラミック回路基板の実施の形態の一例を示す断
面図、図２は、本発明のセラミック回路基板の実施の形
態の他の例を示す断面図、図３は、本発明のセラミック
回路基板の実施の形態の一例を示す平面図である。これ
らの図において１はセラミック基板、２は金属回路板、
３は活性金属ろう材、４は金属回路板２の端子部、５は
溝状の非接合部領域、Ａはセラミック基板１と活性金属
ろう材３との接合端縁、Ｂは金属回路板２と活性金属ろ
う材３との接合端縁である。なお、これらの図で、接合
端縁Ａと接合端縁Ｂとの間の領域が溝状の非接合部領域
５である。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, a ceramic circuit board of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a sectional view showing an example of an embodiment of a ceramic circuit board of the present invention, FIG. 2 is a sectional view showing another example of an embodiment of a ceramic circuit board of the present invention, and FIG. FIG. 3 is a plan view showing an example of an embodiment of the ceramic circuit board of FIG. In these figures, 1 is a ceramic substrate, 2 is a metal circuit board,
3 is an active metal brazing material, 4 is a terminal portion of the metal circuit board 2, 5 is a groove-shaped non-bonding area, A is a joining edge of the ceramic substrate 1 and the active metal brazing material 3, and B is a metal circuit board 2. Is a joint edge between the active metal brazing filler metal 3 and the active metal brazing filler metal 3. In these figures, the region between the joining edge A and the joining edge B is the groove-shaped non-joining portion area 5.
【００２６】セラミック基板１は、その大きさが20〜20
0ｍｍ程度、厚みが0.2〜1.0ｍｍ程度の略四角形状であ
り、その表面に銅または銅合金から成る金属回路板２が
活性金属ろう材３を介して接合される。The ceramic substrate 1 has a size of 20 to 20.
The metal circuit board 2 has a substantially rectangular shape with a thickness of about 0 mm and a thickness of about 0.2 to 1.0 mm, and a metal circuit board 2 made of copper or a copper alloy is bonded to the surface of the metal circuit board 2 with an active metal brazing material 3 interposed therebetween.
【００２７】セラミック基板１は、金属回路板２を支持
する支持部材として機能し、酸化アルミニウム（Ａｌ2
Ｏ3）質焼結体・ムライト（３Ａｌ2Ｏ3・２ＳｉＯ2）質
焼結体・炭化珪素（ＳｉＣ）質焼結体・窒化アルミニウ
ム（ＡｌＮ）質焼結体・窒化珪素（Ｓｉ3Ｎ4）質焼結体
等の電気絶縁材料で形成されている。The ceramic substrate 1 functions as a supporting member for supporting the metal circuit board 2 and is made of aluminum oxide (Al 2
O 3) sintered material, mullite (3Al 2 O 3 · 2SiO 2 ) sintered material, silicon carbide (SiC) sintered material, aluminum nitride (AlN) sintered material, silicon nitride (Si 3 N 4 ) It is formed of an electrically insulating material such as a high quality sintered body.
【００２８】セラミック基板１は、例えば酸化アルミニ
ウム質焼結体で形成されている場合、酸化アルミニウム
・酸化珪素・酸化マグネシウム・酸化カルシウム等の原
料粉末に適当な有機バインダ・可塑剤・溶剤を添加混合
して泥漿状となすとともに、その泥漿物を用いて従来周
知のドクターブレード法やカレンダーロール法を採用す
ることによってセラミックグリーンシート（セラミック
生シート）を得、しかる後、このセラミックグリーンシ
ートに適当な打ち抜き加工を施すとともに、これを複数
枚積層し、約1600℃の高温で焼成することによって製作
される。When the ceramic substrate 1 is formed of, for example, an aluminum oxide sintered body, an appropriate organic binder, a plasticizer, and a solvent are added to and mixed with raw material powders of aluminum oxide, silicon oxide, magnesium oxide, calcium oxide, and the like. To make a ceramic green sheet (ceramic green sheet) by adopting the doctor blade method or calender roll method which is well known in the art. It is manufactured by punching, stacking multiple sheets and firing at a high temperature of about 1600 ℃.
【００２９】セラミック基板１はその厚みを0.2〜1.0ｍ
ｍとすることが、セラミック回路基板の小型化・薄型化
の要求を満足するため、および金属回路板２を接合した
ときのセラミック基板１の割れ抑制のため、さらには搭
載される半導体素子から発生する100℃以上の熱の伝達
性を向上させるためといった点で好ましい。セラミック
基板１の厚みが0.2ｍｍ未満では、セラミック基板１に
金属回路板２を接合したときに発生する熱応力により、
セラミック基板１に割れ等が発生しやすくなる傾向があ
る。他方、1.0ｍｍを超えると、セラミック回路基板の
薄型化への対応が困難となるとともに、搭載される半導
体素子から発生する100℃以上の熱をセラミック基板１
を介して良好に放熱することが困難となる傾向がある。The ceramic substrate 1 has a thickness of 0.2 to 1.0 m.
In order to satisfy the requirements for downsizing and thinning of the ceramic circuit board, and to suppress cracking of the ceramic board 1 when the metal circuit board 2 is joined, m is generated from the mounted semiconductor element. It is preferable in terms of improving the heat transfer property of 100 ° C. or higher. If the thickness of the ceramic substrate 1 is less than 0.2 mm, the thermal stress generated when the metal circuit board 2 is joined to the ceramic substrate 1 may cause
The ceramic substrate 1 tends to be cracked or the like. On the other hand, if the thickness exceeds 1.0 mm, it becomes difficult to reduce the thickness of the ceramic circuit board, and heat of 100 ° C. or higher generated from the mounted semiconductor element is applied to the ceramic board 1.
It tends to be difficult to radiate heat satisfactorily through.
【００３０】金属回路板２は、無酸素銅等の銅または銅
合金から成り、セラミック基板１の表面に活性金属ろう
材３を介して以下のようにして接合される。The metal circuit board 2 is made of copper or a copper alloy such as oxygen-free copper, and is joined to the surface of the ceramic substrate 1 through the active metal brazing material 3 as follows.
【００３１】まず、銀−銅合金粉末等から成る銀ろう粉
末や、アルミニウム−シリコン合金粉末等から成るアル
ミニウムろう粉末に、チタン・ジルコニウム・ハフニウ
ム等の活性金属やその水素化物の少なくとも１種から成
る活性金属粉末を２〜５重量％添加した活性金属ろう材
に適当な有機溶剤・溶媒を添加混合して得た活性金属ろ
う材ペーストを、セラミック基板１の表面に従来周知の
スクリーン印刷技術を用いて金属回路板２に対応した所
定パターンに印刷する。なお、金属回路板２の端子部４
となる部分は、セラミック基板１に対してほぼ垂直に折
り曲げて使用されるため、その部分には活性金属ろう材
ペーストを印刷しない。First, a silver brazing powder composed of silver-copper alloy powder or the like, an aluminum brazing powder composed of aluminum-silicon alloy powder or the like, and at least one active metal such as titanium, zirconium or hafnium, or a hydride thereof. An active metal brazing material paste obtained by adding and mixing an appropriate organic solvent / solvent to the active metal brazing material containing 2 to 5% by weight of the active metal powder is applied to the surface of the ceramic substrate 1 by a conventionally known screen printing technique. Then, a predetermined pattern corresponding to the metal circuit board 2 is printed. The terminal portion 4 of the metal circuit board 2
Since the portion to be used is bent almost perpendicularly to the ceramic substrate 1 and used, the active metal brazing material paste is not printed on the portion.
【００３２】その後、金属回路板２をこの活性金属ろう
材ペーストのパターン上に載置し、これを真空中、また
は中性雰囲気中もしくは還元雰囲気中で、所定温度（約
900℃）で加熱処理し、活性金属ろう材を溶融させてセ
ラミック基板１の表面に金属回路板２を接合させる。こ
れにより、セラミック基板１の表面に金属回路板２が活
性金属ろう材３を介して接合されることとなる。After that, the metal circuit board 2 is placed on the pattern of the active metal brazing material paste, and this is placed in a vacuum or in a neutral atmosphere or a reducing atmosphere at a predetermined temperature (about
Heat treatment is performed at 900 ° C. to melt the active metal brazing material, and the metal circuit board 2 is bonded to the surface of the ceramic substrate 1. As a result, the metal circuit board 2 is bonded to the surface of the ceramic substrate 1 via the active metal brazing material 3.
【００３３】無酸素銅等の銅または銅合金から成る金属
回路板２は、無酸素銅等の銅または銅−亜鉛（亜鉛の含
有量が30重量％以下）、銅−錫合金（錫の含有量が５重
量％以下）、銅−白金合金（白金の含有量が５重量％以
下）、銅−パラジウム合金（パラジウムの含有量が５重
量％以下）、銅−ニッケル合金（ニッケルの含有量が５
重量％以下）等のインゴット（塊）に圧延加工法や打ち
抜き加工法等の従来周知の金属加工法を施すことによっ
て、例えば、厚さが0.5ｍｍで、所望の回路配線パター
ン形状に製作される。このとき、回路配線パターンと一
体となった端子部４も同時に形成される。The metal circuit board 2 made of copper such as oxygen-free copper or a copper alloy includes copper such as oxygen-free copper or copper-zinc (content of zinc is 30 wt% or less), copper-tin alloy (content of tin). 5% by weight or less), copper-platinum alloy (platinum content is 5% by weight or less), copper-palladium alloy (palladium content is 5% by weight or less), copper-nickel alloy (nickel content is 5% by weight or less). 5
By applying a well-known metal processing method such as a rolling processing method or a punching processing method to an ingot (lump) of (wt% or less) etc., for example, a thickness of 0.5 mm is formed into a desired circuit wiring pattern shape. . At this time, the terminal portion 4 integrated with the circuit wiring pattern is also formed at the same time.
【００３４】金属回路板２の厚みは、セラミック回路基
板の小型化・薄型化の要求を満足するため、20〜50Ａと
いった大電流信号を伝達するための電気抵抗の仕様を満
足するため、さらにはセラミック基板１と接合したとき
のセラミック基板１の割れ防止のためといった観点から
は0.1〜1.0ｍｍが好ましい。金属回路板２の厚さが0.1
ｍｍ未満では、電気抵抗が大きくなるため20〜50Ａとい
った大電流信号が良好に流れにくくなる傾向がある。他
方、1.0ｍｍを超えると、小型化・薄型化・配線の高密
度化への対応が困難となるとともに、セラミック基板１
と金属回路板２とを接合したときに発生する熱応力によ
り、セラミック基板１に割れ等が発生しやすくなる傾向
がある。The thickness of the metal circuit board 2 satisfies the requirements for downsizing and thinning of the ceramic circuit board, and therefore satisfies the electrical resistance specification for transmitting a large current signal such as 20 to 50 A. From the viewpoint of preventing cracking of the ceramic substrate 1 when bonded to the ceramic substrate 1, 0.1 to 1.0 mm is preferable. The thickness of the metal circuit board 2 is 0.1
If it is less than mm, the electric resistance becomes large, so that a large current signal of 20 to 50 A tends not to flow well. On the other hand, if it exceeds 1.0 mm, it will be difficult to cope with downsizing, thinning, and high-density wiring, and the ceramic substrate 1
The thermal stress generated when the metal circuit board 2 and the metal circuit board 2 are bonded tends to cause cracks and the like in the ceramic substrate 1.
【００３５】また、金属回路板２が無酸素銅から成る場
合は、無酸素銅はろう付けの際に活性金属ろう材３が無
酸素銅中に存在する酸素により酸化されることなく濡れ
性が良好となるため、金属回路板２を活性金属ろう材３
を介してセラミック基板１へ強固に接合できる。When the metal circuit board 2 is made of oxygen-free copper, the oxygen-free copper has a wettability without being oxidized by the oxygen present in the oxygen-free copper during the brazing. Since it becomes good, the metal circuit board 2 is connected to the active metal brazing material 3
It can be firmly bonded to the ceramic substrate 1 via.
【００３６】端子部４は、金属回路板２の一部として延
出されて金属回路板２と一体形成されている。端子部４
は、そのビッカース硬度が100Ｈｖ以上となるように加
工を施すとよい。端子部４のビッカース硬度を100Ｈｖ
以上とした理由は、通常の端子として使用されるタフピ
ッチ銅のビッカース硬度である80Ｈｖに対してそれ以上
のものとすることにより、この端子一体型セラミック回
路基板を樹脂ケースに実装する際にも端子部４の変形・
曲がりがなくなり、その結果、搭載される半導体素子等
の電子部品を安定して作動させることができるためであ
る。The terminal portion 4 extends as a part of the metal circuit board 2 and is formed integrally with the metal circuit board 2. Terminal part 4
Is preferably processed so that its Vickers hardness is 100 Hv or more. Vickers hardness of terminal part 4 is 100 Hv
The reason for the above is that by setting the Vickers hardness of 80 Hv, which is the tough pitch copper used as a normal terminal, to be more than 80 V, the terminal integrated ceramic circuit board can be mounted in a resin case. Deformation of part 4
This is because there is no bending, and as a result, electronic components such as mounted semiconductor elements can be stably operated.
【００３７】端子部４のビッカース硬度を100Ｈｖ以上
にするための加工方法は、好適なものとして無電解ニッ
ケルめっき加工・衝撃加工や半田皮膜形成加工がある。As a processing method for making the Vickers hardness of the terminal portion 4 100 Hv or more, electroless nickel plating processing, impact processing and solder film forming processing are preferable.
【００３８】端子部４への無電解ニッケルめっき加工
は、例えば、燐を含む無電解ニッケルめっきを端子部４
に施し、その後250℃以上の温度で熱処理を行ない、ニ
ッケル−燐を結晶化させてビッカース硬度を100Ｈｖ以
上にする加工方法である。このときニッケル皮膜中に含
まれる燐は８重量％以上にするとよい。これは、燐が８
重量％以下であるとニッケル−燐化合物の結晶化が十分
になされず、その結果、端子部４のビッカース硬度が10
0Ｈｖ以上とならない傾向があるためである。なお、燐
以外でも、ニッケルと化合物を生成してビッカース硬度
が100Ｈｖ以上となるものであれば、ホウ素などでもよ
い。For the electroless nickel plating on the terminal portion 4, for example, electroless nickel plating containing phosphorus is used.
And then heat-treated at a temperature of 250 ° C. or higher to crystallize nickel-phosphorus so that the Vickers hardness is 100 Hv or higher. At this time, the phosphorus contained in the nickel film is preferably 8% by weight or more. This is 8 phosphorus
If it is less than 10% by weight, the nickel-phosphorus compound is not sufficiently crystallized, and as a result, the Vickers hardness of the terminal portion 4 is 10% or less.
This is because there is a tendency that it does not exceed 0 Hv. In addition to phosphorus, boron or the like may be used as long as it produces a compound with nickel and has a Vickers hardness of 100 Hv or more.
【００３９】また、無電解ニッケルめっきの厚みは1.5
μｍ以上がよい。無電解ニッケルめっきの厚みが1.5μ
ｍ以下では、端子部４のビッカース硬度を増加させる効
果が小さく、100Ｈｖ以上のビッカース硬度が得られな
い傾向があるためである。The thickness of electroless nickel plating is 1.5
μm or more is preferable. Thickness of electroless nickel plating is 1.5μ
This is because when the thickness is m or less, the effect of increasing the Vickers hardness of the terminal portion 4 is small, and the Vickers hardness of 100 Hv or more tends not to be obtained.
【００４０】さらに、250℃以上の熱処理を行なうの
は、250℃以上の熱処理を行なわないと、ニッケル−燐
化合物の結晶化が全く進まず、ビッカース硬度の上昇も
起こらないことがあるためである。この熱処理は、めっ
き皮膜を形成した後にセラミック回路基板を熱処理して
もよいし、めっき皮膜を形成したセラミック回路基板に
半田等により半導体素子等の電子部品を実装する際の熱
処理を利用してもよい。Further, the heat treatment at 250 ° C. or higher is carried out because if the heat treatment at 250 ° C. or higher is not carried out, crystallization of the nickel-phosphorus compound does not proceed at all and the Vickers hardness does not increase. . This heat treatment may be performed by heat-treating the ceramic circuit board after forming the plating film, or by using heat treatment when mounting an electronic component such as a semiconductor element on the ceramic circuit board having the plating film formed thereon by soldering or the like. Good.
【００４１】端子部４への衝撃加工は、例えば、サンド
ブラスト・ウエットブラスト（砥粒と水とを空気圧によ
り噴射させる方法）・金型による押圧等が挙げられる。
ブラストによる衝撃加工の場合は、端子部４のみにブラ
スト加工してもよいし、セラミック回路基板全体をブラ
スト処理して異物除去等の工程と兼ねることもできる。
金型による押圧加工は、例えば、端子部４を金型に入れ
てハンマー等で端子部４のみを叩くようにした装置を用
いて行なえばよい。The impact processing on the terminal portion 4 includes, for example, sand blasting, wet blasting (a method of spraying abrasive grains and water by air pressure), pressing with a die, and the like.
In the case of impact processing by blasting, only the terminal portion 4 may be blasted, or the entire ceramic circuit board may be blasted to serve also as a step of removing foreign matters.
The pressing process with a mold may be performed using, for example, a device in which the terminal portion 4 is put in the mold and only the terminal portion 4 is hit with a hammer or the like.
【００４２】端子部４への半田皮膜形成加工は、例え
ば、半田めっきによる半田皮膜の形成加工や半田ディッ
ピングによる半田皮膜の形成加工が挙げられる。半田は
Ｓｎを含むＰｂ−Ｓｎ系やＳｎ−Ａｇ系などの半田が使
用される。このＳｎが端子部４の銅とＣｕ−Ｓｎ合金を
生成することにより、端子部４のビッカース硬度が上昇
する。Examples of the solder film forming process on the terminal portion 4 include a solder film forming process by solder plating and a solder film forming process by solder dipping. As the solder, Pb-Sn based solder containing Sn or Sn-Ag based solder is used. The Sn forms copper and a Cu—Sn alloy in the terminal portion 4, so that the Vickers hardness of the terminal portion 4 increases.
【００４３】また、本発明のセラミック回路基板におい
ては、金属回路板２の内側に活性金属ろう材３との接合
端が位置する部位において、活性金属ろう材３とセラミ
ック基板１との接合端縁ａから金属回路板２の内側にか
けて溝状に、金属回路板２と活性金属ろう材３との非接
合領域５を設けている。そして、本発明のセラミック回
路基板においてはこのことが重要である。Further, in the ceramic circuit board of the present invention, at the portion where the joint end with the active metal brazing material 3 is located inside the metal circuit board 2, the joint edge of the active metal brazing material 3 and the ceramic substrate 1 is formed. A non-bonding region 5 between the metal circuit board 2 and the active metal brazing material 3 is provided in a groove shape from a to the inside of the metal circuit board 2. This is important in the ceramic circuit board of the present invention.
【００４４】本発明のセラミック回路基板によれば、金
属回路板２の内側に活性金属ろう材３との接合端が位置
する部位において、活性金属ろう材３とセラミック基板
１との接合端縁Ａから金属回路板２の内側にかけて溝状
に、金属回路板２と活性金属ろう材３との非接合領域５
を設けたので、金属回路板２と活性金属ろう材３との接
合端縁Ｂおよびセラミック基板１と活性金属ろう材３と
の接合端縁Ａが、セラミック回路基板を平面視したとき
に離れた位置に形成されることになり、セラミック回路
基板に繰り返し熱衝撃が加えられた際に、セラミック基
板１と活性金属ろう材３との接合端縁Ａに、セラミック
基板１と活性金属ろう材３との間に生じる両者の熱膨張
差により発生する熱応力と、金属回路板２と活性金属ろ
う材３との間に生じる両者の熱膨張差により発生する熱
応力とが重畳して印加されることはなく、その結果、セ
ラミック基板１と活性金属ろう材３との接合端縁Ａにク
ラックが発生して接合強度や熱伝導性、電気絶縁性が低
下してしまうことのない信頼性の高いものとすることが
できる。According to the ceramic circuit board of the present invention, the joint edge A between the active metal brazing material 3 and the ceramic substrate 1 is formed at the portion where the joint end with the active metal brazing material 3 is located inside the metal circuit board 2. The non-bonding region 5 between the metal circuit board 2 and the active metal brazing material 3 in a groove shape from the inside to the inside of the metal circuit board 2.
Since the metal circuit board 2 and the active metal brazing material 3 are joined together, the joining edge B between the metal circuit board 2 and the active metal brazing material 3 and the joining edge A between the ceramic substrate 1 and the active metal brazing material 3 are separated when the ceramic circuit board is viewed in plan view. When the ceramic circuit board is repeatedly subjected to thermal shock, the ceramic substrate 1 and the active metal brazing material 3 are attached to the joint edge A between the ceramic substrate 1 and the active metal brazing material 3. The thermal stress generated by the difference in thermal expansion between the two and the thermal stress generated by the difference in thermal expansion between the metal circuit board 2 and the active metal brazing material 3 are applied in a superimposed manner. As a result, cracks are not generated in the joint edge A between the ceramic substrate 1 and the active metal brazing material 3 and the joint strength, thermal conductivity and electrical insulation are not deteriorated, and the reliability is high. Can be
【００４５】なお、非接合領域５から外側の金属回路板
２は、強度向上による変形・破損防止のために、その厚
みを非接合領域５から内側の金属回路板２の厚みより厚
くし、かつ0.2〜2.0ｍｍとすることが好ましい。その結
果、エッチングにより不要な金属部分を除去することに
より形成される端面のテーパが小さくなり、その結果、
金属回路板２における絶縁間隔が短くなるとともに金属
回路板２の実装領域が多くなる。また、金属回路板２の
厚みを薄くすることでセラミック回路基板の反りバラン
スから裏側の放熱板も薄くなり、セラミック回路基板の
小型化・薄型化・配線の高密度化が可能になり、非接合
領域の外側が端子部とされている場合に変形・破損しに
くくなり端子とソケットとの間の接触面積は大きくなり
機械的・電気的接続信頼性の高いものとなる。これによ
り搭載される電子部品を安定して作動させることができ
る。The metal circuit board 2 outside the non-bonding area 5 has a thickness larger than that of the metal circuit board 2 inside the non-bonding area 5 in order to prevent deformation and damage due to improvement in strength. It is preferably 0.2 to 2.0 mm. As a result, the taper of the end face formed by removing unnecessary metal parts by etching becomes small, and as a result,
The insulation interval in the metal circuit board 2 becomes shorter and the mounting area of the metal circuit board 2 becomes larger. Further, by reducing the thickness of the metal circuit board 2, the back side heat dissipation plate is also thinned due to the warpage balance of the ceramic circuit board, which enables downsizing and thinning of the ceramic circuit board, and higher density of wiring. When the outside of the region is used as the terminal portion, the terminal portion is less likely to be deformed or damaged, the contact area between the terminal and the socket is increased, and the mechanical / electrical connection reliability is high. As a result, it is possible to stably operate the mounted electronic components.
【００４６】さらに、溝状の非接合部領域５の幅は非接
合領域５から外側の金属回路板２の厚みの0.05倍から２
倍、深さは非接合領域５から外側の金属回路板２の厚み
の10〜40％の厚みが望ましい。幅が非接合領域から外側
の金属回路板２の厚みの0.05倍より狭くなると、セラミ
ック基板１と活性金属ろう材３の接合端部Ａにおける応
力緩和が小さくなり、セラミック基板１と活性金属ろう
材３の接合端縁Ａに応力が集中し易くなり、その結果、
セラミック基板１と活性金属ろう材３の接合端部Ａにク
ラックが発生しやすくなる傾向がある。Further, the width of the groove-shaped non-bonding region 5 is 0.05 to 2 times the thickness of the metal circuit board 2 outside the non-bonding region 5.
It is desirable that the depth is 10 to 40% of the thickness of the metal circuit board 2 outside the non-bonded area 5. When the width is narrower than 0.05 times the thickness of the metal circuit board 2 outside the non-bonding region, stress relaxation at the bonding end portion A between the ceramic substrate 1 and the active metal brazing material 3 becomes small, and the ceramic substrate 1 and the active metal brazing material 3 become smaller. The stress tends to concentrate on the joint edge A of No. 3, and as a result,
Cracks are likely to occur at the joint end portion A between the ceramic substrate 1 and the active metal brazing material 3.
【００４７】また、幅が非接合領域から外側の金属回路
板２の厚みの２倍より広くなると、端子部４において非
接合領域５における金属板厚みの薄い部分が多くなり、
その結果、端子部４の強度劣化につながる。また、端子
部４も折り曲げの際は曲げ位置が定まらなくなり、折り
曲げ位置制度が悪くなる。深さにおいては、深さが金属
回路板２の厚みの10％未満であると、溝状の非接合部領
域５に活性金属ろう材３が入り込んで溝状の非接合部領
域５を形成することができなくなる危険性があり、40％
を超えると非接合領域５における金属板厚みの薄い部分
が多くなり、端子部４の強度が低下してしまう傾向があ
る。When the width is wider than twice the thickness of the metal circuit board 2 outside the non-bonding area, the thin metal plate portion in the non-bonding area 5 in the terminal portion 4 increases,
As a result, the strength of the terminal portion 4 is deteriorated. In addition, the bending position of the terminal portion 4 is not fixed during bending, and the bending position accuracy becomes poor. Regarding the depth, when the depth is less than 10% of the thickness of the metal circuit board 2, the active metal brazing filler metal 3 enters the groove-shaped non-bonding region 5 to form the groove-shaped non-bonding region 5. There is a risk of not being able to, 40%
When it exceeds, the number of thin metal plates in the non-bonding region 5 increases, and the strength of the terminal portion 4 tends to decrease.
【００４８】なお、本発明において、金属回路板２の非
接合領域から外側の厚みに対して内側の厚みが薄いと
は、金属回路板２の厚みの厚い領域と薄い領域との間に
位置する領域（厚みが連続的に変化している領域）と溝
状の非接合領域５とが、セラミック回路基板を平面視し
たときに、一部でも重なっている状態をさす。In the present invention, the phrase “the inner thickness is thinner than the outer thickness from the non-bonding region of the metal circuit board 2” means that the metal circuit board 2 is located between the thick region and the thin region. The region (region where the thickness is continuously changed) and the groove-shaped non-bonding region 5 are partially overlapped with each other when the ceramic circuit board is viewed in plan.
【００４９】かくして本発明のセラミック回路基板によ
れば、セラミック基板と金属回路板との間に配されてい
る活性金属ろう材ペーストを非酸化性雰囲気中にて約90
0℃の温度に加熱して溶融させ、セラミック基板に金属
回路板を接合することによって製作され、さらにこれに
半導体素子等の電子部品を半田等の接着材を介して実装
した後、樹脂ケース内に装着されることにより半導体モ
ジュールとなる。Thus, according to the ceramic circuit board of the present invention, the active metal brazing material paste disposed between the ceramic board and the metal circuit board is heated to about 90% in a non-oxidizing atmosphere.
It is manufactured by heating it to a temperature of 0 ° C to melt it, and joining a metal circuit board to a ceramic substrate, and then mounting electronic components such as semiconductor elements on it with an adhesive such as solder. It becomes a semiconductor module by being attached to.
【００５０】なお、本発明は上述の実施例に限定される
ものではなく、本発明の要旨を逸脱しない範囲であれば
種々の変更は可能であり、例えば図１および図２の断面
図、図３の平面図では、金属回路板２の端子部４がセラ
ミック基板１上に位置する例を示したが、図４に平面図
で示すように、端子部３がセラミック基板１の外側に飛
び出して位置してもよい。また、上述の実施例ではセラ
ミック基板１に活性金属ろう材３を介して金属回路板２
をろう付けしたが、これをセラミック基板１の表面にあ
らかじめタングステンやモリブデン等のメタライズ金属
層を被着させておき、このメタライズ金属層に金属回路
板２を活性金属ろう材３を介して接合させてもよい。さ
らに、上述の実施例ではセラミック基板１に活性金属ろ
う材３を介してあらかじめ回路配線パターン形状に形成
された金属回路板２をろう付けしたが、セラミック基板
１と略同形状の金属板をろう付けした後にエッチングに
より不要な金属部分を除去して回路配線パターンおよび
端子部４の形成を行なってもよい。The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the gist of the present invention. For example, the sectional views of FIGS. In the plan view of FIG. 3, an example in which the terminal portion 4 of the metal circuit board 2 is located on the ceramic substrate 1 is shown. However, as shown in the plan view of FIG. 4, the terminal portion 3 pops out of the ceramic substrate 1. May be located. Further, in the above-described embodiment, the metal circuit board 2 is provided on the ceramic substrate 1 with the active metal brazing material 3 interposed therebetween.
Was brazed, but a metallized metal layer of tungsten, molybdenum, or the like was previously deposited on the surface of the ceramic substrate 1, and the metal circuit board 2 was bonded to the metallized metal layer via the active metal brazing material 3. May be. Further, in the above-described embodiment, the metal circuit board 2 previously formed in the circuit wiring pattern shape is brazed to the ceramic substrate 1 through the active metal brazing material 3, but a metal plate having substantially the same shape as the ceramic substrate 1 is soldered. After the attachment, the unnecessary metal portion may be removed by etching to form the circuit wiring pattern and the terminal portion 4.
【００５１】[0051]
【発明の効果】本発明のセラミック回路基板によれば、
金属回路板の内側に活性金属ろう材との接合端が位置す
る部位において、活性金属ろう材とセラミック基板との
接合端縁から金属回路板の内側にかけて溝状に、金属回
路板と活性金属ろう材との非接合領域を設けたことか
ら、金属回路板と活性金属ろう材との接合端縁およびセ
ラミック基板と活性金属ろう材との接合端縁が、セラミ
ック回路基板を平面視したときに離れた位置に形成され
ることになり、セラミック回路基板に繰り返し熱衝撃が
加えられた際に、セラミック基板と活性金属ろう材との
接合端縁に、セラミック基板と活性金属ろう材との間に
生じる両者の熱膨張差により発生する熱応力と、金属回
路板と活性金属ろう材との間に生じる両者の熱膨張差に
より発生する熱応力とが重畳して印加されることはな
く、その結果、セラミック基板と活性金属ろう材との接
合端縁にクラックが発生して接合強度や熱伝導性、電気
絶縁性が低下してしまうことのない信頼性の高いものと
することができる。According to the ceramic circuit board of the present invention,
At the portion where the joint end of the active metal brazing material is located inside the metal circuit board, the metal circuit board and the active metal brazing material are grooved from the joint edge of the active metal brazing material to the ceramic substrate to the inside of the metal circuit board. Since the non-bonding region with the metal material is provided, the bonding edge between the metal circuit board and the active metal brazing material and the bonding edge between the ceramic substrate and the active metal brazing material are separated when the ceramic circuit board is viewed in plan. When the ceramic circuit board is repeatedly subjected to thermal shock, it is formed between the ceramic board and the active metal brazing material at the joint edge between the ceramic board and the active metal brazing material. The thermal stress generated due to the difference in thermal expansion between the two and the thermal stress generated due to the difference in thermal expansion between the metal circuit board and the active metal brazing material are not applied in superposition, and as a result, Ceramic Click substrate and bonding strength and thermal conductivity cracks are generated in the joining edge of the active metal brazing material, electrical insulation can be made highly unreliable be lowered.
【００５２】また、本発明のセラミック回路基板は、上
記構成において、非接合領域の外側の金属回路板の厚み
に対して内側の金属回路板の厚みを薄くしたことから、
エッチングにより回路以外の不要な部分を除去して回路
配線パターンの形成を行なった場合、不要な金属部分を
除去した際に形成される除去部分のテーパ量が小さくな
り、その結果、金属回路板間の絶縁間隔を小さく、かつ
金属回路板の実装領域を多くすることができる。さら
に、金属回路板の厚みを薄くすることにより、セラミッ
ク回路基板の反りバランスから裏側に接合される放熱板
の厚みも薄くすることが可能となり、セラミック回路基
板の小型化・薄型化・配線の高密度化が可能になる。Further, in the ceramic circuit board of the present invention, in the above structure, the thickness of the inner metal circuit board is smaller than the thickness of the outer metal circuit board in the non-bonding region.
When the circuit wiring pattern is formed by removing unnecessary parts other than the circuit by etching, the taper amount of the removed part formed when the unnecessary metal parts are removed becomes small. It is possible to reduce the insulation interval and to increase the mounting area of the metal circuit board. Furthermore, by reducing the thickness of the metal circuit board, it is possible to reduce the thickness of the heat dissipation plate that is bonded to the back side due to the warpage balance of the ceramic circuit board. Densification is possible.
【００５３】さらに、本発明のセラミック回路基板は、
上記構成において、金属回路板の非接合領域から外側が
端子部とされているので、従来のように端子一体成型樹
脂ケースが不要になるだけでなく、端子部とセラミック
回路基板とをボンディングワイヤなどで接続する必要も
なく、また、端子を金属回路板に半田や超音波接合法等
で接合する必要もないので、製作工数が少なく経済的な
セラミック回路基板とすることができる。Further, the ceramic circuit board of the present invention is
In the above structure, since the outside of the non-bonded area of the metal circuit board is the terminal portion, not only the terminal integrally molded resin case becomes unnecessary as in the conventional case, but also the terminal portion and the ceramic circuit board are bonded to each other by a bonding wire or the like. Since it is not necessary to connect the terminals to the metal circuit board by soldering or ultrasonic bonding, it is possible to obtain an economical ceramic circuit board with a small number of manufacturing steps.
【図１】本発明のセラミック回路基板の実施の形態の一
例を示す断面図である。FIG. 1 is a cross-sectional view showing an example of an embodiment of a ceramic circuit board of the present invention.
【図２】本発明のセラミック回路基板の実施の形態の他
の例の断面図である。FIG. 2 is a cross-sectional view of another example of the embodiment of the ceramic circuit board of the present invention.
【図３】本発明のセラミック回路基板の実施の形態の一
例を示す平面図である。FIG. 3 is a plan view showing an example of an embodiment of a ceramic circuit board of the present invention.
【図４】本発明のセラミック回路基板の実施の形態の他
の例の平面図である。FIG. 4 is a plan view of another example of the embodiment of the ceramic circuit board of the present invention.
【図５】従来のセラミック回路基板を示す断面図であ
る。FIG. 5 is a cross-sectional view showing a conventional ceramic circuit board.
１・・・・・・・・セラミック基板
２・・・・・・・・金属回路板
３・・・・・・・・活性金属ろう材
４・・・・・・・・端子部
５・・・・・・・・溝状の非接合領域
Ａ・・・・・・・・セラミック基板と活性金属ろう材と
の接合端縁
Ｂ・・・・・・・・金属回路板と活性金属ろう材との接
合端縁1 ... Ceramic substrate 2 Metal circuit board 3 Active metal brazing material 4 Terminal part 5・ ・ ・ Groove-shaped non-bonding area A ・ ・ ・ Joining edge B between ceramic substrate and active metal brazing material ・ ・ ・ Metal circuit board and active metal brazing material Edge of connection with
Claims (3)
を介して銅または銅合金から成る金属回路板が接合され
ており、該金属回路板の内側に前記活性金属ろう材との
接合端が位置する部位において、前記活性金属ろう材と
前記セラミック基板との接合端縁から前記金属回路板の
内側にかけて溝状に前記金属回路板と前記活性金属ろう
材との非接合領域を設けたことを特徴とするセラミック
回路基板。1. A metal circuit board made of copper or copper alloy is joined to the surface of a ceramic substrate through an active metal brazing material, and a joint end with the active metal brazing material is located inside the metal circuit board. In the portion to be formed, a non-bonding region between the metal circuit board and the active metal brazing material is provided in a groove shape from the bonding edge between the active metal brazing material and the ceramic substrate to the inside of the metal circuit board. And ceramic circuit board.
外側の厚みに対して内側の厚みが薄いことを特徴とする
請求項１記載のセラミック回路基板。2. The ceramic circuit board according to claim 1, wherein the metal circuit board has an inner thickness smaller than an outer thickness from the non-bonding region.
側が端子部とされていることを特徴とする請求項１また
は請求項２記載のセラミック回路基板。3. The ceramic circuit board according to claim 1, wherein an outer side of the non-bonded region of the metal circuit board is a terminal portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002147926A JP3850335B2 (en) | 2002-02-25 | 2002-05-22 | Ceramic circuit board |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002048836 | 2002-02-25 | ||
| JP2002-48836 | 2002-02-25 | ||
| JP2002147926A JP3850335B2 (en) | 2002-02-25 | 2002-05-22 | Ceramic circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003318330A true JP2003318330A (en) | 2003-11-07 |
| JP3850335B2 JP3850335B2 (en) | 2006-11-29 |
Family
ID=29551952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002147926A Expired - Fee Related JP3850335B2 (en) | 2002-02-25 | 2002-05-22 | Ceramic circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3850335B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165588A (en) * | 2005-12-14 | 2007-06-28 | Omron Corp | Power module structure, and solid-state relay using same |
| CN103165588A (en) * | 2013-02-27 | 2013-06-19 | 西安永电电气有限责任公司 | Insulated gate bipolar transistor (IGBT) module |
| JP2014090048A (en) * | 2012-10-30 | 2014-05-15 | Nippon Steel & Sumikin Electronics Devices Inc | Power module substrate |
| KR20180017634A (en) * | 2016-08-10 | 2018-02-21 | 주식회사 아모센스 | Substrate for High Frequency and Manufacturing Method therefor |
| JP2019087676A (en) * | 2017-11-08 | 2019-06-06 | 株式会社豊田自動織機 | Semiconductor device |
| JP2020053580A (en) * | 2018-09-27 | 2020-04-02 | 京セラ株式会社 | Substrate for power module and power module |
| CN112525644A (en) * | 2020-12-22 | 2021-03-19 | 中国科学院西安光学精密机械研究所 | Prefabricated crack copper alloy polyurethane bonding structure tensile pull-off test piece and manufacturing method thereof |
| CN117287453A (en) * | 2023-09-25 | 2023-12-26 | 哈尔滨工业大学 | Ceramic material bonding process with bonding stress eliminating effect |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02126661A (en) * | 1988-11-07 | 1990-05-15 | Fuji Electric Co Ltd | Semiconductor device |
| JP2001332854A (en) * | 2000-05-24 | 2001-11-30 | Toshiba Corp | Ceramic circuit board |
-
2002
- 2002-05-22 JP JP2002147926A patent/JP3850335B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02126661A (en) * | 1988-11-07 | 1990-05-15 | Fuji Electric Co Ltd | Semiconductor device |
| JP2001332854A (en) * | 2000-05-24 | 2001-11-30 | Toshiba Corp | Ceramic circuit board |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007165588A (en) * | 2005-12-14 | 2007-06-28 | Omron Corp | Power module structure, and solid-state relay using same |
| JP2014090048A (en) * | 2012-10-30 | 2014-05-15 | Nippon Steel & Sumikin Electronics Devices Inc | Power module substrate |
| CN103165588A (en) * | 2013-02-27 | 2013-06-19 | 西安永电电气有限责任公司 | Insulated gate bipolar transistor (IGBT) module |
| KR20180017634A (en) * | 2016-08-10 | 2018-02-21 | 주식회사 아모센스 | Substrate for High Frequency and Manufacturing Method therefor |
| KR102378938B1 (en) | 2016-08-10 | 2022-03-25 | 주식회사 아모센스 | Manufacturing Method of Substrate for High Frequency |
| JP2019087676A (en) * | 2017-11-08 | 2019-06-06 | 株式会社豊田自動織機 | Semiconductor device |
| JP2020053580A (en) * | 2018-09-27 | 2020-04-02 | 京セラ株式会社 | Substrate for power module and power module |
| JP7117960B2 (en) | 2018-09-27 | 2022-08-15 | 京セラ株式会社 | Substrates for power modules and power modules |
| CN112525644A (en) * | 2020-12-22 | 2021-03-19 | 中国科学院西安光学精密机械研究所 | Prefabricated crack copper alloy polyurethane bonding structure tensile pull-off test piece and manufacturing method thereof |
| CN112525644B (en) * | 2020-12-22 | 2022-03-22 | 中国科学院西安光学精密机械研究所 | Prefabricated crack copper alloy polyurethane bonding structure tensile pull-off test piece and manufacturing method thereof |
| CN117287453A (en) * | 2023-09-25 | 2023-12-26 | 哈尔滨工业大学 | Ceramic material bonding process with bonding stress eliminating effect |
| CN117287453B (en) * | 2023-09-25 | 2024-04-30 | 哈尔滨工业大学 | Ceramic material bonding process with bonding stress eliminating effect |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3850335B2 (en) | 2006-11-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4926033B2 (en) | Circuit board, package using the same, and electronic device | |
| JP5002614B2 (en) | Manufacturing method of ceramic circuit board | |
| JP3850335B2 (en) | Ceramic circuit board | |
| JP5960522B2 (en) | Ceramic circuit board and electronic device using the same | |
| JP4018992B2 (en) | Ceramic circuit board | |
| JP3793562B2 (en) | Ceramic circuit board | |
| JP2013149912A (en) | Wiring board and electronic apparatus | |
| JP2011171349A (en) | Wiring board and electronic device using the same | |
| JP2003068966A (en) | Ceramic circuit board | |
| JP2002232090A (en) | Ceramic circuit board | |
| JP6680589B2 (en) | Package for storing semiconductor element and semiconductor device | |
| JP3971554B2 (en) | Ceramic circuit board and semiconductor module using the same | |
| JP2007324182A (en) | Wiring board and electronic device | |
| JP2003068936A (en) | Ceramic circuit board | |
| JP2013229377A (en) | Circuit board and electronic apparatus using the same | |
| JP2000340716A (en) | Wiring substrate | |
| JP3279844B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP3441194B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP2013012687A (en) | Ceramic circuit board and electronic device using the same | |
| JP2005101415A (en) | Ceramic circuit board and method for manufacturing the same | |
| JP2008004760A (en) | Wiring board and electronic device | |
| JPH10275878A (en) | Semiconductor package | |
| JP2002076213A (en) | Semiconductor device module | |
| JP3279846B2 (en) | Method for manufacturing semiconductor device | |
| JP5777456B2 (en) | Ceramic circuit board and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041018 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060524 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060530 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060728 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20060818 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20060829 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090908 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100908 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110908 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120908 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130908 Year of fee payment: 7 |
|
| LAPS | Cancellation because of no payment of annual fees |