JPH0367994B2 - - Google Patents

Info

Publication number
JPH0367994B2
JPH0367994B2 JP60042294A JP4229485A JPH0367994B2 JP H0367994 B2 JPH0367994 B2 JP H0367994B2 JP 60042294 A JP60042294 A JP 60042294A JP 4229485 A JP4229485 A JP 4229485A JP H0367994 B2 JPH0367994 B2 JP H0367994B2
Authority
JP
Japan
Prior art keywords
single crystal
pulling
temperature
crystal ingot
growing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60042294A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61201692A (ja
Inventor
Yasushi Shimanuki
Hisashi Furuya
Isamu Suzuki
Koji Murai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Corp
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Priority to JP4229485A priority Critical patent/JPS61201692A/ja
Publication of JPS61201692A publication Critical patent/JPS61201692A/ja
Publication of JPH0367994B2 publication Critical patent/JPH0367994B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP4229485A 1985-03-04 1985-03-04 欠陥発生の少ないシリコン単結晶インゴットの引上げ育成方法 Granted JPS61201692A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4229485A JPS61201692A (ja) 1985-03-04 1985-03-04 欠陥発生の少ないシリコン単結晶インゴットの引上げ育成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4229485A JPS61201692A (ja) 1985-03-04 1985-03-04 欠陥発生の少ないシリコン単結晶インゴットの引上げ育成方法

Publications (2)

Publication Number Publication Date
JPS61201692A JPS61201692A (ja) 1986-09-06
JPH0367994B2 true JPH0367994B2 (en, 2012) 1991-10-24

Family

ID=12632020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4229485A Granted JPS61201692A (ja) 1985-03-04 1985-03-04 欠陥発生の少ないシリコン単結晶インゴットの引上げ育成方法

Country Status (1)

Country Link
JP (1) JPS61201692A (en, 2012)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0729878B2 (ja) * 1990-06-07 1995-04-05 三菱マテリアル株式会社 シリコンウエーハ
CN1317058A (zh) 1998-06-26 2001-10-10 Memc电子材料有限公司 用于晶体生长装置的电阻加热器及其使用方法
WO2000000675A1 (en) * 1998-06-26 2000-01-06 Memc Electronic Materials, Inc. Crystal puller for growing low defect density, self-interstitial dominated silicon
US6285011B1 (en) 1999-10-12 2001-09-04 Memc Electronic Materials, Inc. Electrical resistance heater for crystal growing apparatus
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56104799A (en) * 1980-01-22 1981-08-20 Nec Corp Production of si single crystal and device therefor
JPS57160996A (en) * 1981-03-31 1982-10-04 Toshiba Corp Method and apparatus for growing si single crystal
JPS57183393A (en) * 1981-05-01 1982-11-11 Oki Electric Ind Co Ltd Apparatus for growing single crystal

Also Published As

Publication number Publication date
JPS61201692A (ja) 1986-09-06

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