JPH0367994B2 - - Google Patents
Info
- Publication number
- JPH0367994B2 JPH0367994B2 JP60042294A JP4229485A JPH0367994B2 JP H0367994 B2 JPH0367994 B2 JP H0367994B2 JP 60042294 A JP60042294 A JP 60042294A JP 4229485 A JP4229485 A JP 4229485A JP H0367994 B2 JPH0367994 B2 JP H0367994B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- pulling
- temperature
- crystal ingot
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 230000007547 defect Effects 0.000 claims description 11
- 239000002244 precipitate Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 7
- 238000011282 treatment Methods 0.000 description 5
- 238000012733 comparative method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008710 crystal-8 Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4229485A JPS61201692A (ja) | 1985-03-04 | 1985-03-04 | 欠陥発生の少ないシリコン単結晶インゴットの引上げ育成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4229485A JPS61201692A (ja) | 1985-03-04 | 1985-03-04 | 欠陥発生の少ないシリコン単結晶インゴットの引上げ育成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61201692A JPS61201692A (ja) | 1986-09-06 |
| JPH0367994B2 true JPH0367994B2 (de) | 1991-10-24 |
Family
ID=12632020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4229485A Granted JPS61201692A (ja) | 1985-03-04 | 1985-03-04 | 欠陥発生の少ないシリコン単結晶インゴットの引上げ育成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61201692A (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02263792A (ja) * | 1989-03-31 | 1990-10-26 | Shin Etsu Handotai Co Ltd | シリコンの熱処理方法 |
| JPH0729878B2 (ja) * | 1990-06-07 | 1995-04-05 | 三菱マテリアル株式会社 | シリコンウエーハ |
| KR20010053179A (ko) * | 1998-06-26 | 2001-06-25 | 헨넬리 헬렌 에프 | 저결함밀도, 자기침입형 실리콘을 성장시키기 위한 결정풀러 |
| EP1090168B1 (de) | 1998-06-26 | 2002-09-11 | MEMC Electronic Materials, Inc. | Widerstandsheizung fur eine kristallzüchtungsvorrichtung und verfahren zu ihrer verwendung |
| US6285011B1 (en) | 1999-10-12 | 2001-09-04 | Memc Electronic Materials, Inc. | Electrical resistance heater for crystal growing apparatus |
| US6663709B2 (en) | 2001-06-26 | 2003-12-16 | Memc Electronic Materials, Inc. | Crystal puller and method for growing monocrystalline silicon ingots |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56104799A (en) * | 1980-01-22 | 1981-08-20 | Nec Corp | Production of si single crystal and device therefor |
| JPS57160996A (en) * | 1981-03-31 | 1982-10-04 | Toshiba Corp | Method and apparatus for growing si single crystal |
| JPS57183393A (en) * | 1981-05-01 | 1982-11-11 | Oki Electric Ind Co Ltd | Apparatus for growing single crystal |
-
1985
- 1985-03-04 JP JP4229485A patent/JPS61201692A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56104799A (en) * | 1980-01-22 | 1981-08-20 | Nec Corp | Production of si single crystal and device therefor |
| JPS57160996A (en) * | 1981-03-31 | 1982-10-04 | Toshiba Corp | Method and apparatus for growing si single crystal |
| JPS57183393A (en) * | 1981-05-01 | 1982-11-11 | Oki Electric Ind Co Ltd | Apparatus for growing single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61201692A (ja) | 1986-09-06 |
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