JPH0366816B2 - - Google Patents

Info

Publication number
JPH0366816B2
JPH0366816B2 JP57047385A JP4738582A JPH0366816B2 JP H0366816 B2 JPH0366816 B2 JP H0366816B2 JP 57047385 A JP57047385 A JP 57047385A JP 4738582 A JP4738582 A JP 4738582A JP H0366816 B2 JPH0366816 B2 JP H0366816B2
Authority
JP
Japan
Prior art keywords
transistor
diode
layer
bipolar
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57047385A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58165374A (ja
Inventor
Mitsuo Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57047385A priority Critical patent/JPS58165374A/ja
Publication of JPS58165374A publication Critical patent/JPS58165374A/ja
Publication of JPH0366816B2 publication Critical patent/JPH0366816B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP57047385A 1982-03-26 1982-03-26 複合トランジスタ Granted JPS58165374A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57047385A JPS58165374A (ja) 1982-03-26 1982-03-26 複合トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57047385A JPS58165374A (ja) 1982-03-26 1982-03-26 複合トランジスタ

Publications (2)

Publication Number Publication Date
JPS58165374A JPS58165374A (ja) 1983-09-30
JPH0366816B2 true JPH0366816B2 (enrdf_load_stackoverflow) 1991-10-18

Family

ID=12773631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57047385A Granted JPS58165374A (ja) 1982-03-26 1982-03-26 複合トランジスタ

Country Status (1)

Country Link
JP (1) JPS58165374A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7412191B2 (en) 2001-01-31 2008-08-12 Ricoh Company, Ltd. Toner container and image forming apparatus using the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212173A (ja) * 1982-04-01 1983-12-09 株式会社東芝 制御装置を備えたバイポ−ラ・トランジスタ装置
US4783694A (en) * 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
EP0176753A1 (de) * 1984-09-27 1986-04-09 Siemens Aktiengesellschaft Darlington-Schaltung mit einem Feldeffekttransistor und einen bipolaren Ausgangstransistor
JP2710249B2 (ja) * 1986-06-12 1998-02-10 富士電機株式会社 スイッチング用半導体装置
EP0683521B1 (en) * 1994-05-19 2002-08-14 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno Power integrated circuit ("PIC") structure, and manufacturing process thereof
JP5465211B2 (ja) * 2011-05-23 2014-04-09 リンナイ株式会社 ガス遮断弁およびモータ安全弁

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202667A (ja) * 1983-05-02 1984-11-16 Hitachi Ltd 高速スイツチング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7412191B2 (en) 2001-01-31 2008-08-12 Ricoh Company, Ltd. Toner container and image forming apparatus using the same

Also Published As

Publication number Publication date
JPS58165374A (ja) 1983-09-30

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