JPH036649B2 - - Google Patents

Info

Publication number
JPH036649B2
JPH036649B2 JP56111767A JP11176781A JPH036649B2 JP H036649 B2 JPH036649 B2 JP H036649B2 JP 56111767 A JP56111767 A JP 56111767A JP 11176781 A JP11176781 A JP 11176781A JP H036649 B2 JPH036649 B2 JP H036649B2
Authority
JP
Japan
Prior art keywords
pattern
monitor
reticle
regular
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56111767A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5814137A (ja
Inventor
Masao Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56111767A priority Critical patent/JPS5814137A/ja
Publication of JPS5814137A publication Critical patent/JPS5814137A/ja
Publication of JPH036649B2 publication Critical patent/JPH036649B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Projection-Type Copiers In General (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP56111767A 1981-07-16 1981-07-16 縮小投影露光方法 Granted JPS5814137A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56111767A JPS5814137A (ja) 1981-07-16 1981-07-16 縮小投影露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56111767A JPS5814137A (ja) 1981-07-16 1981-07-16 縮小投影露光方法

Publications (2)

Publication Number Publication Date
JPS5814137A JPS5814137A (ja) 1983-01-26
JPH036649B2 true JPH036649B2 (enExample) 1991-01-30

Family

ID=14569657

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56111767A Granted JPS5814137A (ja) 1981-07-16 1981-07-16 縮小投影露光方法

Country Status (1)

Country Link
JP (1) JPS5814137A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6281727A (ja) * 1985-10-05 1987-04-15 Fujitsu Ltd 埋込型素子分離溝の形成方法
JP3035297B1 (ja) * 1999-05-27 2000-04-24 株式会社ケムテックジャパン プリント基板の製造装置および製造方法
WO2002069389A2 (en) * 2001-02-27 2002-09-06 Koninklijke Philips Electronics N.V. Semiconductor wafer with process control modules

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226902A (en) * 1975-08-25 1977-02-28 Hitachi Ltd Method of making photomask pattern
JPS55129333A (en) * 1979-03-28 1980-10-07 Hitachi Ltd Scale-down projection aligner and mask used for this
JPS5679431A (en) * 1979-12-03 1981-06-30 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor integrated circuit device
JPS5748233A (en) * 1980-09-08 1982-03-19 Toshiba Corp Exposure system for semiconductor substance

Also Published As

Publication number Publication date
JPS5814137A (ja) 1983-01-26

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