JPS5814137A - 縮小投影露光方法 - Google Patents
縮小投影露光方法Info
- Publication number
- JPS5814137A JPS5814137A JP56111767A JP11176781A JPS5814137A JP S5814137 A JPS5814137 A JP S5814137A JP 56111767 A JP56111767 A JP 56111767A JP 11176781 A JP11176781 A JP 11176781A JP S5814137 A JPS5814137 A JP S5814137A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- reticle
- monitor
- substrate
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Projection-Type Copiers In General (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111767A JPS5814137A (ja) | 1981-07-16 | 1981-07-16 | 縮小投影露光方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56111767A JPS5814137A (ja) | 1981-07-16 | 1981-07-16 | 縮小投影露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5814137A true JPS5814137A (ja) | 1983-01-26 |
| JPH036649B2 JPH036649B2 (enExample) | 1991-01-30 |
Family
ID=14569657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56111767A Granted JPS5814137A (ja) | 1981-07-16 | 1981-07-16 | 縮小投影露光方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5814137A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4866004A (en) * | 1985-10-05 | 1989-09-12 | Fujitsu Limited | Method of forming groove isolation filled with dielectric for semiconductor device |
| EP1189111A4 (en) * | 1999-05-27 | 2002-11-06 | Kem Tec Japan Co Ltd | DEVICE AND METHOD FOR MANUFACTURING PRINTED CIRCUITS, PRINTED CIRCUIT HIMSELF |
| WO2002069389A3 (en) * | 2001-02-27 | 2003-06-05 | Koninkl Philips Electronics Nv | Semiconductor wafer with process control modules |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226902A (en) * | 1975-08-25 | 1977-02-28 | Hitachi Ltd | Method of making photomask pattern |
| JPS55129333A (en) * | 1979-03-28 | 1980-10-07 | Hitachi Ltd | Scale-down projection aligner and mask used for this |
| JPS5679431A (en) * | 1979-12-03 | 1981-06-30 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor integrated circuit device |
| JPS5748233A (en) * | 1980-09-08 | 1982-03-19 | Toshiba Corp | Exposure system for semiconductor substance |
-
1981
- 1981-07-16 JP JP56111767A patent/JPS5814137A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5226902A (en) * | 1975-08-25 | 1977-02-28 | Hitachi Ltd | Method of making photomask pattern |
| JPS55129333A (en) * | 1979-03-28 | 1980-10-07 | Hitachi Ltd | Scale-down projection aligner and mask used for this |
| JPS5679431A (en) * | 1979-12-03 | 1981-06-30 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor integrated circuit device |
| JPS5748233A (en) * | 1980-09-08 | 1982-03-19 | Toshiba Corp | Exposure system for semiconductor substance |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4866004A (en) * | 1985-10-05 | 1989-09-12 | Fujitsu Limited | Method of forming groove isolation filled with dielectric for semiconductor device |
| EP1189111A4 (en) * | 1999-05-27 | 2002-11-06 | Kem Tec Japan Co Ltd | DEVICE AND METHOD FOR MANUFACTURING PRINTED CIRCUITS, PRINTED CIRCUIT HIMSELF |
| WO2002069389A3 (en) * | 2001-02-27 | 2003-06-05 | Koninkl Philips Electronics Nv | Semiconductor wafer with process control modules |
| CN100347841C (zh) * | 2001-02-27 | 2007-11-07 | Nxp股份有限公司 | 具有过程控制组件的半导体晶片 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH036649B2 (enExample) | 1991-01-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5978501A (en) | Adaptive inspection method and system | |
| US7655945B2 (en) | Real-time monitoring of particles in semiconductor vacuum environment | |
| US10573531B2 (en) | Method of manufacturing semiconductor device | |
| US6800421B2 (en) | Method of fabrication of semiconductor integrated circuit device | |
| TWI597562B (zh) | Evaluation mask, evaluation method, exposure apparatus, and method of manufacturing an article processed from a substrate | |
| JPH08227851A (ja) | ホトリソグラフィ方法及びそれに使用するホトリソグラフィシステム | |
| EP0459737B1 (en) | Reticle for a reduced projection exposure apparatus | |
| US6174632B1 (en) | Wafer defect detection method utilizing wafer with development residue attracting area | |
| JPH036649B2 (enExample) | ||
| US20080311529A1 (en) | Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns | |
| EP0221457B1 (en) | Method of defect detection in step-and-repeat projection systems | |
| CN1080895C (zh) | 一种掩模原版及用其测量挡板设定精度的方法 | |
| JPH065508A (ja) | 半導体の製造装置 | |
| JPH058935U (ja) | 半導体装置のレチクル | |
| JP2727784B2 (ja) | 縮小投影露光装置用レティクル | |
| JP2836391B2 (ja) | 半導体集積回路作製用マスク及びその検査方法 | |
| KR100232713B1 (ko) | 반도체장치 및 그 제조방법 | |
| JPS5931852B2 (ja) | フォトレジスト露光用マスク | |
| JPH11149152A (ja) | 接地方法およびフォトマスクブランクス | |
| JPS641928B2 (enExample) | ||
| CN116859665A (zh) | 掩膜版及晶圆的曝光方法 | |
| JPH05291106A (ja) | 半導体ウエハーの露光方法 | |
| JPS6362229A (ja) | 露光装置 | |
| JPH04282822A (ja) | 縮小投影型露光装置のステージ | |
| KR20010069056A (ko) | 사진공정용 스피너 |