JPH0364480B2 - - Google Patents
Info
- Publication number
- JPH0364480B2 JPH0364480B2 JP20494086A JP20494086A JPH0364480B2 JP H0364480 B2 JPH0364480 B2 JP H0364480B2 JP 20494086 A JP20494086 A JP 20494086A JP 20494086 A JP20494086 A JP 20494086A JP H0364480 B2 JPH0364480 B2 JP H0364480B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- sic
- substrate
- silicon carbide
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 43
- 239000013078 crystal Substances 0.000 claims description 42
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000001294 propane Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 238000000815 Acheson method Methods 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20494086A JPS6360199A (ja) | 1986-08-30 | 1986-08-30 | 炭化珪素単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20494086A JPS6360199A (ja) | 1986-08-30 | 1986-08-30 | 炭化珪素単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6360199A JPS6360199A (ja) | 1988-03-16 |
| JPH0364480B2 true JPH0364480B2 (ko) | 1991-10-07 |
Family
ID=16498865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20494086A Granted JPS6360199A (ja) | 1986-08-30 | 1986-08-30 | 炭化珪素単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6360199A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100416738B1 (ko) * | 1996-12-30 | 2004-04-21 | 삼성전기주식회사 | 기상결정성장법에의한ZnSe단결정제조장치 |
| JP3631366B2 (ja) * | 1998-03-11 | 2005-03-23 | 株式会社神戸製鋼所 | 単結晶ダイヤモンド合成用基板 |
| JP5051875B2 (ja) * | 2006-12-25 | 2012-10-17 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
-
1986
- 1986-08-30 JP JP20494086A patent/JPS6360199A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6360199A (ja) | 1988-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4623425A (en) | Method of fabricating single-crystal substrates of silicon carbide | |
| US5037502A (en) | Process for producing a single-crystal substrate of silicon carbide | |
| US4865659A (en) | Heteroepitaxial growth of SiC on Si | |
| JPH0321519B2 (ko) | ||
| JPS5838399B2 (ja) | 炭化珪素結晶層の製造方法 | |
| JPS6120514B2 (ko) | ||
| JP3590464B2 (ja) | ４ｈ型単結晶炭化珪素の製造方法 | |
| JPS61243000A (ja) | 炭化珪素単結晶基板の製造方法 | |
| JPH0364480B2 (ko) | ||
| JPS63283014A (ja) | 炭化珪素半導体素子 | |
| JPS6230699A (ja) | 炭化珪素単結晶基板の製造方法 | |
| JPH0327515B2 (ko) | ||
| JPS61291495A (ja) | 炭化珪素単結晶基板の製造方法 | |
| JPS6045159B2 (ja) | 炭化珪素結晶層の製造方法 | |
| JPS5838400B2 (ja) | 炭化珪素結晶層の製造方法 | |
| JPS6152119B2 (ko) | ||
| JPS6115150B2 (ko) | ||
| JP3087030B2 (ja) | ＳｉＣ複合体およびその製造方法ならびに単結晶ＳｉＣ | |
| JP2936481B1 (ja) | 単結晶ＳｉＣおよびその製造方法 | |
| JPS5830280B2 (ja) | 炭化珪素結晶層の製造方法 | |
| JPS6120515B2 (ko) | ||
| JPS60264399A (ja) | 炭化珪素単結晶の製造方法 | |
| JPS609658B2 (ja) | 炭化珪素基板の製造方法 | |
| JPS6272599A (ja) | 炭化珪素単結晶基板の製造方法 | |
| JPH0443879B2 (ko) |