JPH0363224B2 - - Google Patents

Info

Publication number
JPH0363224B2
JPH0363224B2 JP56197842A JP19784281A JPH0363224B2 JP H0363224 B2 JPH0363224 B2 JP H0363224B2 JP 56197842 A JP56197842 A JP 56197842A JP 19784281 A JP19784281 A JP 19784281A JP H0363224 B2 JPH0363224 B2 JP H0363224B2
Authority
JP
Japan
Prior art keywords
layer
melting point
heat treatment
film
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56197842A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5898963A (ja
Inventor
Kohei Higuchi
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56197842A priority Critical patent/JPS5898963A/ja
Publication of JPS5898963A publication Critical patent/JPS5898963A/ja
Publication of JPH0363224B2 publication Critical patent/JPH0363224B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/48—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP56197842A 1981-12-09 1981-12-09 半導体装置 Granted JPS5898963A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56197842A JPS5898963A (ja) 1981-12-09 1981-12-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56197842A JPS5898963A (ja) 1981-12-09 1981-12-09 半導体装置

Publications (2)

Publication Number Publication Date
JPS5898963A JPS5898963A (ja) 1983-06-13
JPH0363224B2 true JPH0363224B2 (enExample) 1991-09-30

Family

ID=16381241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56197842A Granted JPS5898963A (ja) 1981-12-09 1981-12-09 半導体装置

Country Status (1)

Country Link
JP (1) JPS5898963A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1982003948A1 (en) * 1981-05-04 1982-11-11 Inc Motorola Low resistivity composite metallization for semiconductor devices and method therefor
JP2577342B2 (ja) * 1985-03-30 1997-01-29 株式会社東芝 半導体装置およびその製造方法
JPS62145774A (ja) * 1985-12-20 1987-06-29 Agency Of Ind Science & Technol 半導体装置
JPS62188223A (ja) * 1986-01-16 1987-08-17 Sony Corp 半導体化合物の製造方法
JP2733470B2 (ja) * 1993-04-20 1998-03-30 日本保鮮システム株式会社 保冷庫内設置用循環ダクト

Also Published As

Publication number Publication date
JPS5898963A (ja) 1983-06-13

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