JPH0362302B2 - - Google Patents
Info
- Publication number
- JPH0362302B2 JPH0362302B2 JP25969085A JP25969085A JPH0362302B2 JP H0362302 B2 JPH0362302 B2 JP H0362302B2 JP 25969085 A JP25969085 A JP 25969085A JP 25969085 A JP25969085 A JP 25969085A JP H0362302 B2 JPH0362302 B2 JP H0362302B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- drain
- carrier supply
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 55
- 239000012535 impurity Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007850 degeneration Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910004262 HgTe Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- -1 Semiconductor FETs Chemical class 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25969085A JPS62122177A (ja) | 1985-11-21 | 1985-11-21 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25969085A JPS62122177A (ja) | 1985-11-21 | 1985-11-21 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62122177A JPS62122177A (ja) | 1987-06-03 |
| JPH0362302B2 true JPH0362302B2 (enrdf_load_stackoverflow) | 1991-09-25 |
Family
ID=17337564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25969085A Granted JPS62122177A (ja) | 1985-11-21 | 1985-11-21 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62122177A (enrdf_load_stackoverflow) |
-
1985
- 1985-11-21 JP JP25969085A patent/JPS62122177A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62122177A (ja) | 1987-06-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |