JPH0361638B2 - - Google Patents

Info

Publication number
JPH0361638B2
JPH0361638B2 JP7656484A JP7656484A JPH0361638B2 JP H0361638 B2 JPH0361638 B2 JP H0361638B2 JP 7656484 A JP7656484 A JP 7656484A JP 7656484 A JP7656484 A JP 7656484A JP H0361638 B2 JPH0361638 B2 JP H0361638B2
Authority
JP
Japan
Prior art keywords
source
light
substrate
crystal
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7656484A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60221394A (ja
Inventor
Junichi Nishizawa
Yoshihiro Kokubu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP7656484A priority Critical patent/JPS60221394A/ja
Publication of JPS60221394A publication Critical patent/JPS60221394A/ja
Publication of JPH0361638B2 publication Critical patent/JPH0361638B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP7656484A 1984-04-18 1984-04-18 ＧａＡｓ単結晶の製造方法 Granted JPS60221394A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7656484A JPS60221394A (ja) 1984-04-18 1984-04-18 ＧａＡｓ単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7656484A JPS60221394A (ja) 1984-04-18 1984-04-18 ＧａＡｓ単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS60221394A JPS60221394A (ja) 1985-11-06
JPH0361638B2 true JPH0361638B2 (enExample) 1991-09-20

Family

ID=13608729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7656484A Granted JPS60221394A (ja) 1984-04-18 1984-04-18 ＧａＡｓ単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS60221394A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0630339B2 (ja) * 1984-07-16 1994-04-20 新技術事業団 ＧａＡｓ単結晶の製造方法

Also Published As

Publication number Publication date
JPS60221394A (ja) 1985-11-06

Similar Documents

Publication Publication Date Title
JPS6291494A (ja) 化合物半導体単結晶成長方法及び装置
JPS6134928A (ja) 元素半導体単結晶薄膜の成長法
JPS6134927A (ja) 化合物半導体単結晶薄膜の成長法
US4693207A (en) Apparatus for the growth of semiconductor crystals
JPH0361638B2 (enExample)
JPS6126215A (ja) ＧａＡｓ単結晶の製造方法
US3290181A (en) Method of producing pure semiconductor material by chemical transport reaction using h2s/h2 system
JPH0361637B2 (enExample)
JPS62120016A (ja) カ−ボンド−ピング制御方法
JP2821557B2 (ja) 化合物半導体単結晶薄膜の成長方法
JP3182584B2 (ja) 化合物薄膜形成方法
JPH0212814A (ja) 化合物半導体結晶成長方法
JPS59164697A (ja) 気相成長方法
JPH01158721A (ja) 光照射型低温ｍｏｃｖｄ方法および装置
JPS61161710A (ja) 化合物半導体薄膜の製造法
JPS62208625A (ja) シリコンエピタキシヤル成長方法
JPH0136694B2 (enExample)
JPH0267721A (ja) 化合物半導体薄膜の製造方法
JPH05198518A (ja) 化合物半導体薄膜形成法
JPS62139319A (ja) 化合物半導体結晶成長方法
Nishizawa Photoassisted deposition process
JPH0633228B2 (ja) 分子線エピタキシヤル成長法
JPS5943815B2 (ja) エピタキシヤル成長法
JP2793939B2 (ja) 化合物半導体結晶の成長方法
JPS62138391A (ja) 分子線エピタキシヤル成長法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term