JPH0360916B2 - - Google Patents
Info
- Publication number
- JPH0360916B2 JPH0360916B2 JP58175479A JP17547983A JPH0360916B2 JP H0360916 B2 JPH0360916 B2 JP H0360916B2 JP 58175479 A JP58175479 A JP 58175479A JP 17547983 A JP17547983 A JP 17547983A JP H0360916 B2 JPH0360916 B2 JP H0360916B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- magnets
- substrate
- sputtering target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17547983A JPS6067668A (ja) | 1983-09-21 | 1983-09-21 | スパッタリング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17547983A JPS6067668A (ja) | 1983-09-21 | 1983-09-21 | スパッタリング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6067668A JPS6067668A (ja) | 1985-04-18 |
| JPH0360916B2 true JPH0360916B2 (enrdf_load_stackoverflow) | 1991-09-18 |
Family
ID=15996760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17547983A Granted JPS6067668A (ja) | 1983-09-21 | 1983-09-21 | スパッタリング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6067668A (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0718006B2 (ja) * | 1983-11-30 | 1995-03-01 | 日本テキサス・インスツルメンツ株式会社 | スパッタ装置 |
| JPS61204371A (ja) * | 1985-03-06 | 1986-09-10 | Ulvac Corp | 陰極スパツタリング用磁気回路装置 |
| JPS6413123U (enrdf_load_stackoverflow) * | 1987-07-13 | 1989-01-24 | ||
| JPH0280565A (ja) * | 1988-09-16 | 1990-03-20 | Tanaka Kikinzoku Kogyo Kk | マグネトロンスパッター用マグネット |
| JPH02225666A (ja) * | 1989-02-27 | 1990-09-07 | Tokuda Seisakusho Ltd | スパッタ装置 |
| JPH11340165A (ja) * | 1998-05-20 | 1999-12-10 | Applied Materials Inc | スパッタリング装置及びマグネトロンユニット |
| DE102010049329A1 (de) * | 2010-10-22 | 2012-04-26 | Forschungszentrum Jülich GmbH | Sputterquellen für Hochdrucksputtern mit großen Targets und Sputterverfahren |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5474743U (enrdf_load_stackoverflow) * | 1977-11-05 | 1979-05-28 | ||
| JPS5887270A (ja) * | 1981-11-18 | 1983-05-25 | Hitachi Ltd | プレ−ナマグネトロン方式のスパッタリング電極 |
-
1983
- 1983-09-21 JP JP17547983A patent/JPS6067668A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6067668A (ja) | 1985-04-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5795451A (en) | Sputtering apparatus with a rotating magnet array | |
| JP2000144399A (ja) | スパッタリング装置 | |
| US4025410A (en) | Sputtering apparatus and methods using a magnetic field | |
| EP3880862B1 (en) | Tilted magnetron in a pvd sputtering deposition chamber | |
| JPH0669026B2 (ja) | 半導体処理装置 | |
| JPH0360916B2 (enrdf_load_stackoverflow) | ||
| JPH10251849A (ja) | スパッタリング装置 | |
| JPH0240739B2 (ja) | Supatsutasochi | |
| JP3760652B2 (ja) | 多分割スパッタリングターゲット | |
| JPS61221363A (ja) | スパツタ装置 | |
| JPS627852A (ja) | 薄膜形成方法 | |
| JP2003027225A (ja) | スパッタリングターゲットおよびスパッタリング装置 | |
| JP4274452B2 (ja) | スパッタ源及び成膜装置 | |
| JPS59173265A (ja) | スパツタ装置 | |
| CN210012895U (zh) | 一种溅射磁控系统 | |
| TWI770421B (zh) | 濺鍍裝置及濺鍍方法 | |
| JPS6217175A (ja) | スパツタリング装置 | |
| JPS6357502B2 (enrdf_load_stackoverflow) | ||
| JPS6277477A (ja) | 薄膜形成装置 | |
| JPS63243272A (ja) | マグネトロン・スパツタリング方法 | |
| JPH03240953A (ja) | マグネトロンスパッタ装置 | |
| JP2906163B2 (ja) | スパッタリング装置 | |
| JP2001207258A (ja) | 回転磁石およびインライン型スパッタリング装置 | |
| JPH09241840A (ja) | マグネトロンスパッタ装置 | |
| JPS6197838A (ja) | 薄膜形成方法 |