JPS6067668A - スパッタリング装置 - Google Patents

スパッタリング装置

Info

Publication number
JPS6067668A
JPS6067668A JP17547983A JP17547983A JPS6067668A JP S6067668 A JPS6067668 A JP S6067668A JP 17547983 A JP17547983 A JP 17547983A JP 17547983 A JP17547983 A JP 17547983A JP S6067668 A JPS6067668 A JP S6067668A
Authority
JP
Japan
Prior art keywords
target
sputtering
substrate
magnet
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17547983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0360916B2 (enrdf_load_stackoverflow
Inventor
Toru Takeuchi
竹内　透
Yasuhisa Sato
泰久 佐藤
Katsuhiro Fujino
藤野　勝裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17547983A priority Critical patent/JPS6067668A/ja
Publication of JPS6067668A publication Critical patent/JPS6067668A/ja
Publication of JPH0360916B2 publication Critical patent/JPH0360916B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP17547983A 1983-09-21 1983-09-21 スパッタリング装置 Granted JPS6067668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17547983A JPS6067668A (ja) 1983-09-21 1983-09-21 スパッタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17547983A JPS6067668A (ja) 1983-09-21 1983-09-21 スパッタリング装置

Publications (2)

Publication Number Publication Date
JPS6067668A true JPS6067668A (ja) 1985-04-18
JPH0360916B2 JPH0360916B2 (enrdf_load_stackoverflow) 1991-09-18

Family

ID=15996760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17547983A Granted JPS6067668A (ja) 1983-09-21 1983-09-21 スパッタリング装置

Country Status (1)

Country Link
JP (1) JPS6067668A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116774A (ja) * 1983-11-30 1985-06-24 Nippon Texas Instr Kk スパッタ装置
JPS61204371A (ja) * 1985-03-06 1986-09-10 Ulvac Corp 陰極スパツタリング用磁気回路装置
JPS6413123U (enrdf_load_stackoverflow) * 1987-07-13 1989-01-24
JPH0280565A (ja) * 1988-09-16 1990-03-20 Tanaka Kikinzoku Kogyo Kk マグネトロンスパッター用マグネット
JPH02225666A (ja) * 1989-02-27 1990-09-07 Tokuda Seisakusho Ltd スパッタ装置
WO1999060617A1 (fr) * 1998-05-20 1999-11-25 Applied Materials Inc. Appareil de pulverisation cathodique et unite magnetron
CN103168338A (zh) * 2010-10-22 2013-06-19 于利奇研究中心有限公司 具有大靶的用于高压溅射的溅射源和溅射方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474743U (enrdf_load_stackoverflow) * 1977-11-05 1979-05-28
JPS5887270A (ja) * 1981-11-18 1983-05-25 Hitachi Ltd プレ−ナマグネトロン方式のスパッタリング電極

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474743U (enrdf_load_stackoverflow) * 1977-11-05 1979-05-28
JPS5887270A (ja) * 1981-11-18 1983-05-25 Hitachi Ltd プレ−ナマグネトロン方式のスパッタリング電極

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60116774A (ja) * 1983-11-30 1985-06-24 Nippon Texas Instr Kk スパッタ装置
JPS61204371A (ja) * 1985-03-06 1986-09-10 Ulvac Corp 陰極スパツタリング用磁気回路装置
JPS6413123U (enrdf_load_stackoverflow) * 1987-07-13 1989-01-24
JPH0280565A (ja) * 1988-09-16 1990-03-20 Tanaka Kikinzoku Kogyo Kk マグネトロンスパッター用マグネット
JPH02225666A (ja) * 1989-02-27 1990-09-07 Tokuda Seisakusho Ltd スパッタ装置
WO1999060617A1 (fr) * 1998-05-20 1999-11-25 Applied Materials Inc. Appareil de pulverisation cathodique et unite magnetron
CN103168338A (zh) * 2010-10-22 2013-06-19 于利奇研究中心有限公司 具有大靶的用于高压溅射的溅射源和溅射方法
CN103168338B (zh) * 2010-10-22 2015-11-25 于利奇研究中心有限公司 具有大靶的用于高压溅射的溅射源和溅射方法

Also Published As

Publication number Publication date
JPH0360916B2 (enrdf_load_stackoverflow) 1991-09-18

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