JPH0357185B2 - - Google Patents

Info

Publication number
JPH0357185B2
JPH0357185B2 JP63127420A JP12742088A JPH0357185B2 JP H0357185 B2 JPH0357185 B2 JP H0357185B2 JP 63127420 A JP63127420 A JP 63127420A JP 12742088 A JP12742088 A JP 12742088A JP H0357185 B2 JPH0357185 B2 JP H0357185B2
Authority
JP
Japan
Prior art keywords
sputtering
vacuum chamber
plasma source
substrate
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63127420A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01298151A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12742088A priority Critical patent/JPH01298151A/ja
Publication of JPH01298151A publication Critical patent/JPH01298151A/ja
Publication of JPH0357185B2 publication Critical patent/JPH0357185B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP12742088A 1988-05-25 1988-05-25 化合物薄膜の形成方法 Granted JPH01298151A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12742088A JPH01298151A (ja) 1988-05-25 1988-05-25 化合物薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12742088A JPH01298151A (ja) 1988-05-25 1988-05-25 化合物薄膜の形成方法

Publications (2)

Publication Number Publication Date
JPH01298151A JPH01298151A (ja) 1989-12-01
JPH0357185B2 true JPH0357185B2 (enrdf_load_stackoverflow) 1991-08-30

Family

ID=14959521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12742088A Granted JPH01298151A (ja) 1988-05-25 1988-05-25 化合物薄膜の形成方法

Country Status (1)

Country Link
JP (1) JPH01298151A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005087973A1 (ja) * 2004-03-15 2008-01-31 株式会社アルバック 成膜装置及びその成膜方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4613015B2 (ja) * 2004-02-10 2011-01-12 株式会社アルバック 成膜方法及び成膜装置
JP7586691B2 (ja) * 2020-11-24 2024-11-19 株式会社Screenホールディングス スパッタリング装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376867A (ja) * 1986-09-19 1988-04-07 Mitsubishi Kasei Corp 反応性スパツタリング装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2005087973A1 (ja) * 2004-03-15 2008-01-31 株式会社アルバック 成膜装置及びその成膜方法

Also Published As

Publication number Publication date
JPH01298151A (ja) 1989-12-01

Similar Documents

Publication Publication Date Title
EP0265246B1 (en) Magnetic iron oxide film and production thereof
JPS6141762A (ja) 超微細パタ−ンの形成法
US4003813A (en) Method of making a magnetic oxide film with high coercive force
US4013534A (en) Method of making a magnetic oxide film
JPH0357185B2 (enrdf_load_stackoverflow)
JPH01319670A (ja) 双軸異方性を有する単結晶磁気被膜を製造する方法
JPH0364473A (ja) コールドウォールcvd反応器における窒化チタンの蒸着
JPS6130017A (ja) 酸化物垂直磁化薄膜の製造方法
JPH05255859A (ja) 薄膜形成装置
JPH0357187B2 (enrdf_load_stackoverflow)
JPH05311429A (ja) 薄膜形成装置
JPH04362017A (ja) 配向性Ta2O5薄膜の作製方法
JPH03146656A (ja) 膜形成装置及び膜形成方法
JP2611976B2 (ja) 光磁気記録膜の製造方法
JPH02157199A (ja) 単結晶形成基板用金型およびそれを用いた単結晶基板
JPS6293366A (ja) 窒化ホウ素膜の作製方法
JPS61168592A (ja) 分子線結晶成長方法
JPH0620321A (ja) 磁気記録媒体の製造方法
JPS62264427A (ja) 磁気記録媒体
JPH0941143A (ja) 記録媒体の製造方法
JPH025255A (ja) 光磁気記録媒体の製造方法
JPH01297808A (ja) 磁性ガーネット膜の製造方法
JPH0247011B2 (ja) Jiseitaihakumakunoseizohoho
JPS6386436A (ja) ランプアニ−ル装置
JPH04333561A (ja) 窒化物膜の形成方法